BAT SERIES DIODES Search Results

Contextual Info: SGS-THOMSON * 7 # . l« e iI Í L I « M D g t BAT 17, D S SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION BAT 17 is a metal silioon junction diode featuring low turn-on voltage, low capacitance and ultrafast switching. Single or double series connected di­ odes are available. Two double diodes can be

t17c

Abstract: bat17
Contextual Info: r z 7 s g s -T h o m s o n ^7# BAT 17, DS g SMALL SIGNAL SCHOTTKY DIODES 2 {•* Ir 1 DESCRIPTION BAT 17 is a metal to silicon junction diode featuring low turn-on voltage, low capacitance and ultrafast switching. Single or double series connected diodes are available. Two double diodes can be connected

thyristor phase control rectifier

Contextual Info: Chips, Direct Copper Bonding DCB and Direct Aluminium Bonding (DAB) Ceramic Substrates Power Semiconductor Chips IXYS has a wide range of chips for many electronic circuits. IGBT Chips Vc.3 vCE(Mt) •c G series, Low VCE(Bat) type G series, High Speed type

BAT DIODES

Abstract: BAT15-013 BAT15-033 BAT15-043 BAT15-063 BAT15-073 BAT15-093 BAT15-103 BAT15-123 Q62702A1178
Contextual Info: HiRel Silicon Schottky Diode BAT 15 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5106/014 ESD: Electrostatic discharge sensitive device,

BAT14T1

Abstract: il 074 14013 BAT14-014ES bat14
Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 14 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • C -esa qualified • ESA/SCC Detail Spec. No.: 5106/014

NF 034

Abstract: BAT14-013 BAT14-033 BAT14-043 BAT14-063 BAT14-073 BAT14-093 BAT14-103 BAT14-123 Q62702D1345
Contextual Info: SIEMENS BAT 14 HiRel Silicon Schottky Diode Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • ^ esa qualified • ESA/SCC Detail Spec. No.: 5106/014

Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 15 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • C qualified • ESA/SCC Detail Spec. No.: 5106/014

Q62702-A118

Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 15 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • qualified • ESA/SCC Detail Spec. No.: 5106/014

NF 034

Abstract: marking A03 BAT DIODES BAT14-013 BAT14-033 BAT14-043 BAT14-063 BAT14-073 BAT14-093 BAT14-103
Contextual Info: HiRel Silicon Schottky Diode BAT 14 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5106/014 ESD: Electrostatic discharge sensitive device,

Contextual Info: /= 7 * 7 #. S G S -T H O M S O N K Æ D M tE Ü E » * © L9705 DOUBLE QUAD CONTACT INTERFACE CIRCUIT ADVANCE DATA • OPERATING DC SUPPLY VOLTAGE RANGE 5V TO 25V . SUPPLY OVERVOLTAGE PULSE UP TO 40V . VERY LOW STAND-BY QUIESCENT CUR­ RENT, M A X50pA ■ INTERNAL CLAMPING DIODES AT CONTACT

Contextual Info: SGS-THOMSON R Æ O e œ Œ O IM M S L9704 OCTAL SUPPLY CONTACT MONITORING CIRCUIT ADVANCE DATA • OPERATING DC SUPPLY VOLTAGE RANGE 5V TO 25V ■ SUPPLY O VERVOLTAGE PULSE UP TO 40V . VERY LOW STANDBY Q UIESCENT CUR­ RENT 0.2mA ■ INTERNAL CLAM PING DIODES AT CO NTACT

Contextual Info: BAT68. Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications BAT68 BAT68-02L BAT68-04 BAT68-04W 3 BAT68-06 BAT68-06W 3 1 1 2 2 3 D 1 D 2 D 1 D 2 1 2 1 2 BAT68-08S 6 4 5 D 1 1 2 D 2 D 3 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: f Z 7 SGS-THOMSON ^ 7 # H O T « ! s L9704 OCTAL SUPPLY CONTACT MONITORING CIRCUIT . OPERATING DC SUPPLY VOLTAGE RANGE 5V TO 25V . SUPPLY OVERVOLTAGE PULSE UP TO 40V • VERY LOW STANDBY QUIESCENT CUR­ RENT 0.2mA ■ INTERNAL CLAMPING DIODES AT CONTACT

BAT68

Abstract: BAT68-02L BAT68-04 BAT68-04W BAT68-05 BAT68-05W BAT68-06 BAT68-06W BAT68-07 BAT68-07W
Contextual Info: BAT68. Silicon Schottky Diodes
For mixer applications in the VHF / UHF range
For high-speed switching applications BAT68 BAT68-02L BAT68-04 BAT68-04W 3 3 1 1 2 2 BAT68-07 BAT68-07W BAT68-08S 6 4 3 1 2 D 2 D 1 1 2 1 3 D 2 2 D 1 D 2 1 2 4 D 3 5 D 2 D 1

AT120A

Contextual Info: DISCRETE SEMICONDUCTORS 0ITÂ S y iI T BAT120 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 Philips Sem iconductors 1998 Oct 30 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes

SOt323 marking code 6X

Contextual Info: BAT68. Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications • Pb-free RoHS compliant package BAT68 BAT68-04 BAT68-04W ! ! ,   BAT68-06 BAT68-06W BAT68-07W ! ,  ,  "  $ ! ,  , BAT68-08S

BAT64

Abstract: BAT64-02W BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06 BAT64-06W BAT64-07 SCD80
Contextual Info: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAT64 BAT64-02W BAT64-04 BAT64-04W 3 BAT64-05 BAT64-05W 3 1 1 2 2 BAT64-06

Contextual Info: BAT64. Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection, bias isolation and clamping application
Integrated diffused guard ring
Low forward voltage BAT64 BAT64-02W BAT64-04 BAT64-04W 3 BAT64-05 BAT64-05W 3 1 1 2 2 BAT64-06 BAT64-06W

65s sot23

Abstract: BAT64-07 SOT143 BAT64-05 BAT64-07 BAT64 BAT64-02W BAT64-04 BAT64-04W BAT64-05W BAT64-06
Contextual Info: BAT64. Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection, bias isolation and clamping application
Integrated diffused guard ring
Low forward voltage BAT64 BAT64-02W BAT64-04 BAT64-04W 3 BAT64-05 BAT64-05W 3 1 1 2 2 BAT64-06 BAT64-06W

65s sot23

Abstract: 02W SOT23 BAT64-02V
Contextual Info: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAT64 BAT64-02V BAT64-02W BAT64-04 BAT64-04T BAT64-04W ! BAT64-05 BAT64-05W

Contextual Info: BAT68. Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications • Pb-free RoHS compliant package BAT68 BAT68-04 BAT68-04W ! BAT68-06 BAT68-06W ! BAT68-07W ! " BAT68-08S $ ! ,  ,   ,  , 

Bat64

Abstract: BAT64-02V BAT64-02W BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06 BAT64-06W BAT64-07
Contextual Info: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAT64 BAT64-02V BAT64-02W BAT64-04 BAT64-04W 3 BAT64-05 BAT64-05W 3 1 1 2

8 pin 4413

Abstract: 4413 converter LTC4351 mosfet 4413 transistor 4413 circuit diagram for 24V automatic battery charger 4413 1N5817 LTC4413 LTC4413EDD
Contextual Info: LTC4413 Dual 2.6A, 2.5V to 5.5V, Ideal Diodes in 3mm x 3mm DFN FEATURES DESCRIPTION n The LTC 4413 contains two monolithic ideal diodes, each capable of supplying up to 2.6A from input voltages between 2.5V and 5.5V. Each ideal diode uses a 100mΩ P-channel MOSFET that independently connects INA to

DIN 6784

Abstract: SOt323 marking code 6X
Contextual Info: BAT68. Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications BAT68 BAT68-04 BAT68-04W ! ! ,   BAT68-06 BAT68-06W BAT68-07W ! ,  ,  "  $ ! ,  , BAT68-08S " # ,  , ,   , ! ! ESD: Electrostatic discharge sensitive device, observe handling precaution!