BAS21 A82 Search Results

bas19

Abstract: BAS20 BAS21 BAS21 A82
Contextual Info: BASI9 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar epitaxial high-speed diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M arking BAS19 = A8 BAS20 = A81 BAS21 = A82 _3.0_ 2.8 0.48 0.38 0.14 0.09 0.70 0.50 Pin configuration 1 = ANODE

BAS21

Abstract: BAS20 BAS19 BAS21 A82 bas21 lp
Contextual Info: BASI 9 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar epitaxial high-speed diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M arking BAS19 = A8 BAS20 = A81 BAS21 = A82 _3.0_ 2.8 3 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 0.14

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR HIGH SPEED DIODES BAS19, BAS20, BAS21 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS19 = A8 BAS20 = A81 BAS21 = A82

BAS21

Abstract: MMBD1401 h7 sot23 diode FAIRCHILD DIODE
Contextual Info: BAS21 BAS21 CONNECTION DIAGRAM 3 3 3 A82. 2 SOT-23 1 2 2 NC 1 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units W IV Working Inverse Voltage

Contextual Info: BAS19 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar epitaxial high-speed diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 _3.0_ 2.8 0.14 0.48 0.38 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE

A82 SMD

Abstract: smd A81 marking A82 SOT-23 BAS21 SOT-23 smd diode A82 smd marking A8 BAS19 BAS20 BAS21 SOT-23 marking a8
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR HIGH SPEED DIODES BAS19, BAS20, BAS21 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 High-Speed Switching Diodes in a Microminiature Plastic Envelope.

Contextual Info: Transys Electronics L I M I T E D SILICON PLANAR HIGH SPEED DIODES BAS19, BAS20, BAS21 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 High-Speed Switching Diodes in a Microminiature Plastic Envelope.

smd A81

Abstract: BAS21 SOT-23 A82 SMD smd diode A82 smd marking A8 BAS19 BAS20 BAS21
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR HIGH SPEED DIODES BAS19, BAS20, BAS21 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS19 = A8 BAS20 = A81 BAS21 = A82

h7 sot23 diode

Abstract: marking A82 SOT-23 marking A82 diode marking EY diode A82
Contextual Info: BAS21 BAS21 CONNECTION DIAGRAM 3 3 3 A82. 2 SOT-23 1 2 2 NC 1 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units W IV Working Inverse Voltage

BAS20

Contextual Info: BASI9 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar epitaxial high-speed diodes PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN mm Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 _3.0_ 2.8 0.14 - " ^ 0.09 0.48 03§ 1 = ANODE 2 = NC 3 = CATHODE

BAS21 SOT23

Abstract: BAS21 BAS20 diode 2U BAS21 A82 BAS19 BAS21A82 Diode a82 10 SOT23 BAS21 pin configuration
Contextual Info: BAS19 BAS20 BAS21 BAS19 BAS20 BAS21 SOT23 SILICON HIGH SPEED SWITCHING DIODE ISSUE 2 – JANUARY 1995 SWITCHING TIME TEST DATA PIN CONFIGURATION  Recovery Time Equivalent Test Circuit Pulse Generator DUT ! 10% SOT23 ABSOLUTE MAXIMUM RATINGS. tp tot 90% 3

Contextual Info: BAS19 . BAS21 BAS19 . BAS21 Fast Switching Surface Mount Si-Planar Diodes Schnelle Si-Planar-Dioden für die Oberflächenmontage Version 2005-07-07 1.1 2.9 ±0.1 0.4 Power dissipation Verlustleistung 2.5 ±0.1 Type Code 1.3 max 3 2 1 1.9 Dimensions - Maße [mm]

Contextual Info: BAS19 . BAS21 BAS19 . BAS21 Fast Switching Surface Mount Si-Planar Diodes Schnelle Si-Planar-Dioden für die Oberflächenmontage Version 2005-10-05 1.1 2.9 ±0.1 0.4 Power dissipation Verlustleistung 2.5 ±0.1 Type Code 1.3 max 3 2 1 1.9 Dimensions - Maße [mm]

BAs21 JS

Abstract: transistor A82 420KW BAS19 BAS20 BAS21 TO-236 A82 marking code a8 jr
Contextual Info: BAS19 . BAS21 BAS19 . BAS21 Fast Switching Surface Mount Si-Planar Diodes Schnelle Si-Planar-Dioden für die Oberflächenmontage Version 2005-10-05 1.1 2.9 ±0.1 0.4 2.5 ±0.1 Type Code 1.3 max 3 2 1 1.9 Dimensions - Maße [mm] 1=A 2 = n.c./frei 3=C Power dissipation – Verlustleistung

Contextual Info: BAS 19, BAS20, BAS21 S ilicon P la n a r E p ita x ia l H ig h -S p e e d D iodes for sw itching and general purpose applications M a rk in g BAS 19 = A8 B A S20 = A81 BAS21 = A82 M. Top View m W SO T-23 P la stic P a c k a g e W eight approx. 0.008 g D im ensions in m m

a80 marking code

Abstract: BAS213 BAS21 on MARKING A80 sot23 BAS20-T1 BAS21 BAS21-T1 BAS19 BAS19-T1 BAS20
Contextual Info: BAS19 – BAS21 WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT FAST SWITCHING DIODE Features ! High Conductance ! ! Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose and Switching Plastic Material – UL Recognition Flammability

MARKING A80 sot-23

Abstract: MARKING A80 sot23 marking A82 SOT-23 A8 diode sot-23 SOT-23 marking a8 sot-23 diode marking t3 sot23 marking A8 BAS21 A82 bas21 t3 BAS19-T3
Contextual Info: BAS19 – BAS21 WTE POWER SEMICONDUCTORS SURFACE MOUNT FAST SWITCHING DIODE Features ! High Conductance L ! ! Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion ! For General Purpose and Switching B ! Plastic Material – UL Recognition Flammability

Contextual Info: BAS19 – BAS21 WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT FAST SWITCHING DIODE Features High Conductance L Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose and Switching Plastic Material – UL Recognition Flammability

Contextual Info: Three Terminals SMD Switching Diodes BAS19/BAS20/BAS21 Three Terminals SMD Switching Diodes Features • • • • • Fast switching speed Surface mount package ideally suited for automatic insertion Electrically Identical to Standard JEDEC High conductance

Contextual Info: BAS19, BAS20, BAS21 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified 1

BAS213

Abstract: BAS21 SOT-23 MARKING A80 sot23 BAS20 MARKING A80 sot-23 A80 sot-23
Contextual Info: BAS19 – BAS21 WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT FAST SWITCHING DIODE Features High Conductance L Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose and Switching Plastic Material – UL Recognition Flammability

MARKING A80 sot-23

Abstract: MARKING A80 sot23 125OC BAS16 BAS19 BAS20 BAS21
Contextual Info: BAS16, BAS19, BAS20, BAS21 SURFACE MOUNT SWITCHING DIODES VOLTAGE 75-200 Volts POWER 350 mWatts PACKAGE SOT-23 FEATURES • Fast switching speed. • Surface mount package Ideally Suited for Automatic insertion • Electrically Identical to Standard JEDEC

marking A82

Abstract: MARKING FZ SOT-23 marking a8 100S BAS19 BAS20 BAS21 marking A8
Contextual Info: 3 K BASI 9 / BAS20 / BAS21 SURFACE MOUNT FAST SWITCHING DIODE LITEMZI y POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance

Contextual Info: BASI 9 / BAS20 / BAS21 SURFACE MOUNT FAST SWITCHING DIODE Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 - H ; h“ A Ì Mechanical Data_