BARE DIE SCHOTTKY DIODE Search Results
BARE DIE SCHOTTKY DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CUHS15S40 |
|
Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H | Datasheet | ||
| CUHS20F30 |
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Schottky Barrier Diode (SBD), 30 V, 2 A, US2H | Datasheet | ||
| CUHS15S60 |
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Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H | Datasheet | ||
| CLS10F40 |
|
Schottky Barrier Diode (SBD), 40 V, 1 A, CL2E | Datasheet | ||
| CUHS20F60 |
|
Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H | Datasheet |
BARE DIE SCHOTTKY DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
vsb3200
Abstract: vsb320
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TY045S200S6OT TY054S200S6OT 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 vsb3200 vsb320 | |
VSB2200SContextual Info: New Product TY.S200.6. Series www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 200 V • Low forward voltage drop • High frequency operation C 2 d b |
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TY045S200S6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VSB2200S | |
vsb3200
Abstract: VSB2200S V30200C VSB3200S
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TY045S200S6OT TY054S200S6OT 11-Mar-11 vsb3200 VSB2200S V30200C VSB3200S | |
MBR10100CT equivalentContextual Info: New Product TY.S100.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 100 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM |
Original |
TY045S100S6OT TY054S100S6OT TY066S100A6OT TY080S100A6OU TY080S100S6PU TY093S100S6PU TY093S100A6OU TY102S100A6OU TY102S100S6OU TY119S100A6OV MBR10100CT equivalent | |
S3060Contextual Info: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM |
Original |
S060A6. TY059S060A6OT TY078S060A6PU TY085S060A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S3060 | |
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Contextual Info: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM |
Original |
S080A6. TY056S080A6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
death metal diagramContextual Info: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM |
Original |
S080A6. TY056S080A6OT TY073S080A6PT TY085S080A6OU TY102S080A6OU 11-Mar-11 death metal diagram | |
MBR10100CT equivalentContextual Info: New Product TY.S100.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 100 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM |
Original |
TY045S100S6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 MBR10100CT equivalent | |
MBR10100CT equivalent
Abstract: 277A equivalent 89216 TI ASSEMBLY CODE v30100c v80100
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Original |
TY045S100S6OT TY054S100S6OT TY066S100A6OT TY080S100A6OU TY080S100S6PU TY093S100S6PU TY093S100A6OU TY102S100A6OU TY102S100S6OU TY119S100A6OV MBR10100CT equivalent 277A equivalent 89216 TI ASSEMBLY CODE v30100c v80100 | |
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Contextual Info: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM |
Original |
S060A6. TY059S060A6OT TY078S060A6PU TY085S060A6OU 11-Mar-11 | |
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Contextual Info: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM |
Original |
S060A6. TY059S060A6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM |
Original |
S080A6. TY056S080A6OT TY073S080A6PT TY085S080A6OU TY102S080A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: New Product SX081H150A4OU Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 150 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
Original |
SX081H150A4OU SX081H150A4OU 11-Mar-11 | |
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Contextual Info: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
Original |
S150A6. TY056S150A6OT TY080S150A6OU TY093S150A6OU TY102S150A6OU 11-Mar-11 | |
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277AContextual Info: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
Original |
TY080S120A6OU TY080S120S6PU TY093S120A6OU TY102S120A6OU TY102S120S6PU TY119S120A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 277A | |
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Contextual Info: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
Original |
2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
|
Contextual Info: New Product SX081H150A4OU Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 150 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
Original |
SX081H150A4OU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
|
Contextual Info: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
Original |
S150A6. TY056S150A6OT TY080S150A6OU TY093S150A6OU TY102S150A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: New Product SX081H150A4OU Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 150 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
Original |
SX081H150A4OU SX081H150A4OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
Original |
TY080S120A6OU TY080S120S6PU TY093S120A6OU TY102S120A6OU TY102S120S6PU TY119S120A6OU 11-Mar-11 | |
SX050
Abstract: sx061 SX DO-214AA
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Original |
SX050H100S4PT SX061H100S4PT SX067H100S4PT SX093H100A4OU SX119H100S4PU 08trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. SX050 sx061 SX DO-214AA | |
SX073H060S4PTContextual Info: New Product SX.H060.4. Series www.vishay.com Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 60 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
Original |
SX073H060A4OT SX073H060S4PT SX110H060S4PU SX128H060S4OV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: New Product SX.H045.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 45 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
Original |
SX073H045A4OT SX073H045S4PT SX085H045S4PU SX110H045A4OU SX110H045S4PU 11-Mar-11 | |
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Contextual Info: New Product SX.H100.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 100 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
Original |
SX050H100S4PT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |