SX081H150A4OU Search Results
SX081H150A4OU Datasheets Context Search
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Contextual Info: New Product SX081H150A4OU Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 150 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
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SX081H150A4OU SX081H150A4OU 11-Mar-11 | |
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Contextual Info: New Product SX081H150A4OU Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 150 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
Original |
SX081H150A4OU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: New Product SX081H150A4OU Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 150 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
Original |
SX081H150A4OU SX081H150A4OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |