BAR Search Results

10GWJ2CZ

Abstract: 10GWJ2CZ47C 10MWJ2CZ47
Contextual Info: SCHOTTKY BARRIER TYPE RECTIFIER STACK 10GWJ2CZ47C 10 J,M WJ2CZ47 Unit in mm SW ITCHING TY P E POW ER SU PPLY APPLICATIO N . CO M VERTER & CHOPPER APPLICATIO N . - 10.3 MAX • • • 03.2 ±0-2 Repetitive Peak Reverse Voltage : V r r m = 40, 60, 90V

Contextual Info: TOSHIBA TMP47C337AN CMOS 4-Bit Microcontroller The 47C 337A is based on the TLCS-47 CMOS series. The 47C 337A has On-screen display circuit OSD to display bar which indicate channel or volume on TV screen, A/D converter (Comparator) input, D/A converter output which is suitable for

Contextual Info: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature

12-10D1A

Abstract: TOSHIBA RECTIFIER
Contextual Info: U U T V J £ * t 0 0 SCHOTTKY BARRIER TYPE RECTIFIER STACK U5GWJ2C48C SWITCHING TYPE POWER SUPPLY APPLICATON. CONVERTER & CHOPPER APPLICATION. • • • Repetitive Peak Reverse Voltage : V r r m = 40V Average Output Rectified Current : I = 5A Low Switching Losses and Output Noise.

Contextual Info: 1SS395 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS395 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 • • Small Package Low Forward Voltage : Vp 2 = 0.23V (Typ.) @Ijp = 5mA ± 0.1 1.25 ± 0.1 I* 3 oo + I - -ESt 2 M A X IM U M RATINGS (Ta = 25°C)

1SS239

Contextual Info: SILICON EPITAXIAL SCHO TTKY BARRIER TY P E DIODE C A T V /U H F /V H F MIXER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range Vr Ip Tj Tstg RATING 6 30 125

Contextual Info: TOSHIBA 5FW J2C48M ,U 5FW J2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 5FWJ2C48M, U5FWJ2C48M SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Repetitive Peak Reverse Voltage : V r r m = 30V • Average Output Rectified Current

TCD131D

Abstract: TC74HC04P 2SA1015-Y 2SA1015 Y
Contextual Info: C D 1 3 1 D The TCD131D is a high resolution and high sensitivity 2048-element linear image sensor. The device can be used foi OCR» POS handscanner bar-code type , and other optical measurements. The device is operated by only 12V power supply. The device is mounted in 22-pin Cerdip package

Contextual Info: TO SHIBA 1SS384 TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 j 1.25± O.lj • Small Package • Composed of 2 independent diodes. • Low Forward Voltage : Vp 2 = 0.23V (TYP.) o o

Contextual Info: 1SS294 TO SHIBA TO SHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 •

TLR208

Abstract: TLG208 TLY208
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A D Ì F | ‘ì0 T ? a5 0 □ 0 1 7 1 0 1 0 | ~ 9 9D < D IS C R E T E /O P T O 17101 D -p ^ tó t TLR 208-5, TLG 208-5, TLY208-5 GaP RED, GaP GREEN, GaAsP YELLOW e u n iK FEATURES: , All Piasele Hold Type « Bar Point Size

Contextual Info: TO SHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5-0.3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I o = 0.5A (Max.)

TOLD9231F

Contextual Info: TOSHIBA VLD Technical Data TOLD923 F Units in: mm Standard index guided type MQW InGaAlP VLD Package flange: 09mm Applications include: Bar code scanners, measurement systems, laser pointer, etc. Beam Emission Surface r Pin Connection 1. Laser diode cathode

2FWJ42

Contextual Info: TO SHIBA 2FWJ42M TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE 2FWJ42M Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION PORTABLE EQUIPMENT BATTERY APPLICATION • • • • Repetitive Peak Reverse Voltage Average Forward Current Low Forward Voltage

2N2160

Contextual Info: TYPES n 2N2160 P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U L L E T I N N O . D L S 68318 9, O C T O B E R 1 9 6 2 - R E V I S E D M A Y 1968 Designed for Medium-Power Switching, Oscillator and Pulse Timing Circuits • Highly Stable Negative Resistance

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST GP 00 LTR DESCRIPTION B DATE DWN ZMR SLB 16 / J A N / 0 7 REVISED PER ECO-06-021 1 65 APVD -V- A DOUBLE BAR POLARIZATION SLOTS.

Contextual Info: CUS08F30 Schottky Barrier Diode Silicon Epitaxial CUS08F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.40 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit

SMC MARKING Sk

Abstract: SK520C
Contextual Info: SK52C - SK520C CREAT BY ART 5.0AMPS Surface Mount Schottky Barrier Rectifiers SMC/DO-214AB Features — For surface mounted application — Metal to sillicon rectifier, majority carrier conduction — Low forward voltage drop — Easy pick and place — High surge current capability

Contextual Info: SSH210 CREAT BY ART 2.0AMPS. Surface Mount Schottky Barrier Rectifier SMB Pb RoHS COMPLIANCE Features — For surface mounted application — Easy pick and place — Metal to silicon rectifier, majority carrier conduction — Low power loss, high efficiency —

Contextual Info: CMS15 TOSHIBA Schottky Barrier Diode CMS15 Switching Mode Power Supply Applications Output voltage: ≤12 V Unit: mm DC/DC Converter Applications • • • • Forward voltage: VFM = 0.58 V (max) Average forward current: IF (AV) = 3.0 A Repetitive peak reverse voltage: VRRM = 60 V

6045pt

Abstract: MBR6050PT-60100PT PT-60 MBR60XXPT
Contextual Info: MBR6035PT - MBR60100PT CREAT BY ART Pb 60.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

Contextual Info: CRS02 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS02 Switching Mode Power Supply Applications Portable Equipment Battery Applications Unit: mm • Low forward voltage: VFM = 0.40 V max • Average forward current: IF (AV) = 1.0 A • Repetitive peak reverse voltage: VRRM = 30 V

Contextual Info: SK22A - SK215A CREAT BY ART 2.0AMPS. Surface Mount Schottky Barrier Rectifier SMA/DO-214AC Pb RoHS COMPLIANCE Features — For surface mounted application — Metal to silicon rectifier, majority carrier conduction — Low forward voltage drop — Easy pick and place

MBR40200

Abstract: MBR 40150 MBR40150 4045 pt
Contextual Info: MBR4035PT - MBR40200PT CREAT BY ART Pb 40.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction