BAP 52 Search Results
BAP 52 Price and Stock
Bourns Inc PTD902-10BAP-B203Potentiometers PANEL CONTROL - 9MM-ST-CARBON |
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PTD902-10BAP-B203 | 181 |
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Amphenol Corporation USBAPSCC7203AUSB Cables / IEEE 1394 Cables USBA Fld JN SC Cp USBA 0.3M Crdset |
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USBAPSCC7203A | 137 |
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Amphenol Corporation USBAPSCC2205AUSB Cables / IEEE 1394 Cables Recept Cordset 0.5M Square Flange |
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USBAPSCC2205A | 115 |
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Amphenol Corporation USBAPSCC2203AUSB Cables / IEEE 1394 Cables USBA Fld SQFlg SC Cp USBA 0.3M Crdset |
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USBAPSCC2203A | 84 |
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Amphenol Corporation USBAPSCC7205AUSB Cables / IEEE 1394 Cables USB A Fld JamNutRcpt SelfClsCapUSB-A.5mCS |
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USBAPSCC7205A | 73 |
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BAP 52 Datasheets Context Search
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4325-DS-01
Abstract: ISO 18000-6D
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EM4325 EM4325 4325-DS-01 24-Apr-13 420005-A01, ISO 18000-6D | |
simple subwoofer circuit diagram
Abstract: dual sub woofer circuit diagram Various Russian logic IC Datasheets spoken english from tamil ac3 coder 5.1 speaker with subwoofer circuit diagram surround sound subwoofer circuits 5.1 surround sound dolby circuits 7.1 surround sound dolby circuits tone control subwoofer circuit diagram
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BTP 10/400
Abstract: C3V9 5T BTP 10/200 BZP C3V3 tyrystor btp 10/400 bzp 650 c10 BZP 683 C6V8 tyrystory BYBP 10-200 BB109
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T0220 BACE95, BAE795 BACE95R, BAE795R BADE95, BAE995 BABE95, BAE895 BAV70 BTP 10/400 C3V9 5T BTP 10/200 BZP C3V3 tyrystor btp 10/400 bzp 650 c10 BZP 683 C6V8 tyrystory BYBP 10-200 BB109 | |
GT5Y-4SN6A200
Abstract: 24v to 220v circuit 220v to 5v dc 12v spdt relays E55996 SM2S-05C SY4S-51 SY4S-61 12V to 220v ac 5A 220v AC
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GT5Y-2SN6D24 6S/60S/6M/60M 1S/10S/1M/10M GT5Y-4SN6A24 SY4S-05 GT5Y-4SN6A200 24v to 220v circuit 220v to 5v dc 12v spdt relays E55996 SM2S-05C SY4S-51 SY4S-61 12V to 220v ac 5A 220v AC | |
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Contextual Info: 20 I EXTERNAL CONNECTOR BODY DIMENSIONS: G EE NOTES B AND 9 JACKS ARE AVAILABLE N STANDARD 4. 6. AND 8 POSITION BODY SIZES NUMBER OP CONTACT POSITIONS! CONNECTOR SIZE 4 CAN ACCOMMODATE 2 OR 4 TERMNALS, CONNECTOR SIZE 6 CAN ACCOMMODATE 2. 4. DR 6 TERMNALS. |
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GT3W-A11
Abstract: SR2P-06 GT3F-1EAF20 SR2P-05 SR2P-05C SR2P-51 SR6P-M08G SR6P-M11G Timers GT3F-1AD24
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48N--3 SR6P-M08G 11-Pin SR6P-M11G 11-M3 GT3W-A11 SR2P-06 GT3F-1EAF20 SR2P-05 SR2P-05C SR2P-51 SR6P-M08G SR6P-M11G Timers GT3F-1AD24 | |
wiring diagram for 11-pin relay
Abstract: 11-pin relay pin out diagram 6711P SR6P-M11G 11-Pin base timer SR2P-511 30v analog switch DPDT 30v 3A analog switch DPDT
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E55996 50/60Hz AC/30V wiring diagram for 11-pin relay 11-pin relay pin out diagram 6711P SR6P-M11G 11-Pin base timer SR2P-511 30v analog switch DPDT 30v 3A analog switch DPDT | |
mpx pressure sensor mpx4115
Abstract: MPX4115 application note MPX4115AP BAP 52 MPX4115 MPX4115A MPX4115AS MPX4115ASX MPX4115A motorola mpx4115d
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MPX4115/D MPX4115 115kPa MPX4115 mpx pressure sensor mpx4115 MPX4115 application note MPX4115AP BAP 52 MPX4115A MPX4115AS MPX4115ASX MPX4115A motorola mpx4115d | |
BA1 K11
Abstract: ba1d1a PD48576118FF-E24-DW1-A
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PD48576109-A PD48576118-A R10DS0064EJ0001 PD48576109-A 864-word PD48576118-A BA1 K11 ba1d1a PD48576118FF-E24-DW1-A | |
45DB011
Abstract: lfxtal mbus AN9926 HD10 HFA3841 HFA3842A HFA3842AIN HFA3842AIN-TK MA17
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HFA3842A HFA3842A HFA386x 45DB011 lfxtal mbus AN9926 HD10 HFA3841 HFA3842AIN HFA3842AIN-TK MA17 | |
54348Contextual Info: Errata Sheet ATSC Document A/52 Digital Audio Compression Standard AC-3 7/22/1999 The following is a list of known errata in ATSC Document A/52, "Digital Audio Compression Standard (AC-3)", dated December 20, 1995. This list is maintained by Dolby Laboratories for informational |
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Contextual Info: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. |
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PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0200 | |
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Contextual Info: Preliminary Datasheet PD48288109A μPD48288118A R10DS0098EJ0001 Rev.0.01 August 2, 2011 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. |
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PD48288109A PD48288118A R10DS0098EJ0001 288M-BIT PD48288109A 432-word PD48288118A 216-word | |
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Contextual Info: Datasheet PD48288109A μPD48288118A R10DS0098EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. |
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PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0200 | |
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X91AContextual Info: Preliminary Datasheet PD48576209-A μPD48576218-A μPD48576236-A R10DS0063EJ0001 Rev.0.01 Nov 08, 2010 576M- Low Latency DRAM Common I/O Description The μPD48576209-A is a 67,108,864-word by 9 bit, the μPD48576218-A is a 33,554,432 word by 18 bit and the |
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PD48576209-A PD48576218-A PD48576236-A R10DS0063EJ0001 PD48576209-A 864-word PD48576218-A PD48576236-A PD48576209-A, X91A | |
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Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. |
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PD48288118 288M-BIT PD48288118 | |
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Contextual Info: Preliminary Datasheet PD48288209A μPD48288218A μPD48288236A R10DS0097EJ0001 Rev.0.01 August 1, 2011 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209A is a 33,554,432-word by 9 bit, the μPD48288218A is a 16,777,216-word by 18 bit and the |
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PD48288209A PD48288218A PD48288236A R10DS0097EJ0001 288M-BIT PD48288209A 432-word PD48288218A 216-word PD48288236A | |
PD48288236Contextual Info: Datasheet PD48288209A μPD48288218A μPD48288236A R10DS0097EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209A is a 33,554,432-word by 9 bit, the μPD48288218A is a 16,777,216-word by 18 bit and the μPD48288236A is a 8,388,608-word by 36 bit synchronous double data rate Low Latency RAM fabricated with |
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PD48288209A PD48288218A PD48288236A 288M-BIT 432-word 216-word PD48288236A 608-word PD48288236 | |
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Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD48288209, 48288218, 48288236 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209 is a 33,554,432-word by 9 bit, the μPD48288218 is a 16,777,216 word by 18 bit and the μPD48288236 is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology |
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PD48288209, 288M-BIT PD48288209 432-word PD48288218 PD48288236 | |
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Contextual Info: 20 h NOTES: 1 MATERIALS: 2) K I 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) HOUSING PAR TS ARE MADE OF POLYESTER. RATED UJ_. 94 V -0 , COLOR IS BLACK, TERMINALS ARE XJ15/<038) THICK PHOSPHOR BRONZE. TERMINAL PLATING OPTIONS PER E S - 8 8 - * * * : A - SELECT GOLD IN CONTACT AREA: 50 MICROINCHES MIN. |
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SDA-42410-* | |
spirometer
Abstract: pressure to current converter MPX4115 MEMS pressure sensor KITMPXSHOWEVK Pressure sensor waterlevel sensor processor MPX12 MPXH6115 MPX5700
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Contextual Info: Trusted Smart Life Solutions Electronic Driving Licenses Application Introduction Q1 - 2013 Introduction to National ID • Governments introduce electronic drivers licenses to – Reduce document fraud & identity theft – Securely and simply identify drivers |
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2006/126/EC | |
digital piezoresistive pressure sensor automotive
Abstract: airbag control unit ABS Wheel Speed Sensor accelerometer airbag signal conditioning circuits of map sensor adc for accelerometer sensor air bag abstract "anti lock braking system" airbag crash sensor car Speed Sensor
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AN1645/D AN1645 digital piezoresistive pressure sensor automotive airbag control unit ABS Wheel Speed Sensor accelerometer airbag signal conditioning circuits of map sensor adc for accelerometer sensor air bag abstract "anti lock braking system" airbag crash sensor car Speed Sensor | |
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Contextual Info: • fe.fc.53^31 0054577 fib3 H A P X N AMER PHILIPS/DISCRETE BCW61 SERIES b?E J> J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits. |
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BCW61 bbS3T31 QD24SflO | |