BAND Search Results

Contextual Info: TLE2037, TLE2037A EXCALIBUR LOW -NOISE HIGH-SPEED PRECISION DECOM PENSATED OPERATIONAL AM PLIFIERS D3454, MAY 1990 - REVISED APRIL 1991 available features Outstanding Combination of DC Precision and AC Performance: Gain-Bandwldth Product. . . 80 MHz Typ V

TC9303AN

Abstract: 6LW6 TC9303 tc9304f LCD12 TC9319F TC9301AN TC9309F
Contextual Info: Digital Tuning System DTS (1) System IC-LSI System No. Controller PLL prescaler DTS-9 A3 Operating Voltage Crystal Oscittation TC9301AN TC9172AP 4.5-5.5V 7.2MHz TC9303AN TC9227P 4.5-5.5V 7.2MHz Major Functions Receiving Band Preset Memory * Station Clock

Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4000F VHF-UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Band W id th 700MHz M in. @ 3 dB dow n • Low Noise 4dB (Typ.) @ f = 400MHz • Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature

TLC32046

Contextual Info: TLC32046 WIDE-BAND ANALOG INTERFACE CIRCUITS Telecommunications Circuits See the TLC32046 Wide-Band Analog Interface Circuits Data Manual in Section 3 for product information. , Tex a s ^ In s t r u m e n t s POST OFFICE BOX 655303 * DALLAS, TEXAS 75265

2SC2640

Abstract: pj 71
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2640 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=28W Min, ( f=175MHz, VCC=12.5V, Pi=4W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=14.5V, Pj=4W, f=175MHz

THB111A

Abstract: THB111 THB112A band pass active filters Active Filters TOKO catalog 5c THB11 300-3000-Hz
Contextual Info: TOKO A M E R I C A 138 SME D INC TYPE THB • 'ìQt.TbaS Q Q Q 5 1 S 3 3ST H T A I r& TOKO Active Filters Band-Pass THB111A THB112A THB111A THB112A 23Max 27.fbMâA ^ 0.5 P x 7 = 17.78 1 2 3 1 2 3 4 Vc OUT PUT GND GND 1 2 3 5 6 7 1 2 3 4 5 GND 6 GND 7 IN PUT

723da

Abstract: SNS512 SN7514L
Contextual Info: LINEAR INTEGRATED CIRCUITS TYPES SN5S12, SN5514. SN7512. SN7514 DIFFERENTIAL VIDEO AMPLIFIERS B U L L E T IN N O . D L -S 7 3 1 1496, A U G U S T 1 9 7 1 - R E V IS E D S E P T E M B E R 1973 • 80-MHz Bandwidth • Typical Differential Voltage Amplification of 300

POUT315

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED

TIM0910-20

Contextual Info: TIM0910-20 FE A TU R E S : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE P 1dB = 43.0 dBm at 9.5 GHz to 10.5GHz ■ HIGH GAIN GldB B 7 0 dB at 9 5 GHz * 10 5 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTIC

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

S1912

Abstract: las19u
Contextual Info: INTEGRATED CIRCU ITS U N IT R O D E 5 AMP POSITIVE VOLTAGE REGULATORS LAS 1900 SERIES FEATURES DESCRIPTION • Guaranteed Power Dissipation 50 Watts fa 80°C Case • Guaranteed input-output differential: - 2.6 Volts • Low noise, band gap reference • Remote sense capability

2SC1557

Abstract: L39C cub vc 150
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO tpwjimm/fmm L 39C 0 0 4 8 9 Ü T ^ 3 / '2 3 - -If O O VHP , L’HP^CATVffl ° Microwave High Power Amplifier Applications ° VHP, II HP Band CATV Applications MAXIMUM RATINGS (Ta =25°C) CHARACTERISE C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz

Contextual Info: Texas Instruments Microwave Military Components TGM8014 Carrier Plate Assembly Product Features • 0.6-watt average output power at 1-dB gain compression ■ 6 to 18 GHz bandwidth ■ Automated assembly ■ Selectable gate biasing ■ 100% RF screening Product Description

Contextual Info: TO SHIBA 2SC4394 Transistor Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • L o w N oise Figure, H igh Gain • N F = 1.1 d B , IS21el2 = 11 dB f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )

amplifier se592

Contextual Info: SE592, NE592, NE592A DIFFERENTIAL VIDEO AMPLIFIERS D2667, FEBRUARY 1 9 8 4 -R E V ISE D FEBRUARY 1988 • 90-MHz Bandwidth NE592, N E592A . . . D O R N P A C K A G E SE592 . . . J P A C K A G E • Adjustable Gain to 400 TOP VIEW • No Frequency Compensation Required

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • band internally matched • Hermetically sealed package

S211 equivalent

Abstract: AFL1 S211
Contextual Info: T O SH IB A TA4011F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A A fl 1 1 F m m m • ■ ■ ■ UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Low Current Içç = 3.5mA • Wide Band f = 2.4GHz 3dB down • VCC = 1-5~3V Operating Supply Voltage

TA7060

Abstract: TA7060AP ta706
Contextual Info: TOSHIBA-, EL ECT RONIC DE 9097247 TOSHIBA. ÏT~| TCHTSM? ñ | ELECTRONIC 02E 16872 D TA7060AP FOR FM IF AMPLIFIER Unit in mm FOR TV SIF AMPLIFIER 17.8 M A X . Recommended for Wide and Narrow Bands Amplifier. . Excellent FM/IF Limiter Circuit. MAXIMUM RATINGS Ta=25 C

2sc5464

Contextual Info: T O SH IB A 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 ie l 2 = 12dB f= lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz

Contextual Info: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA HN2C11FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 1 FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.1 + 0.1 • Including Two Devices in U S6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC