BALUN PUSH PULL AMPLIFIER DESIGN Search Results

AN025 Push-Pull High IP2 Amplifiers

Abstract: ECB-100331 NGA-486 sga-6289 C 32725 ETC1-1-13 AN025 wide bandwidth D 811-25
Contextual Info: DESIGN APPLICATION NOTE - AN025 Push-Pull High IP2 Amplifiers Abstract: With the abundance of data and voice traffic being transmitted across standard cable and wireless pathways and the ever increasing linearity requirements of CATV amplifiers, there is a great need for amplification that optimizes gain,

7472B

Abstract: RF push pull power amplifier 1008AF-901XKLC TC1-33-75G2 avx 603 TAT7472B LQH31HNR50K 001 soic TAT7472 ESD 2255
Contextual Info: 75 Ohm RF Amplifier 50-1000 MHz TAT 7472B Advanced Product Information Overview The TAT7472B is a general purpose push pull CATV 75 Ohm RF Amplifier designed for use up to 1000 MHz. It is fabricated using Triquint’s GaAs pHEMT technology to optimize performance and cost. This high

RF push pull power amplifier

Abstract: 7466 class A push pull power amplifier class B push pull power amplifier balun ntsc MABA-007681-CT2010 R81017 186MA 04025A151JAT2A balun push pull
Contextual Info: 75 Ohm RF Amplifier 50-1300 MHz TAT7466 Advanced Product Information Overview The TAT7466 is a 75 Ohm RF Amplifier designed for use up to 1300 MHz. The TAT7466 contains two separate amplifiers for push pull applications. It is fabricated using 6-inch GaAs pHEMT technology to

93F2975

Abstract: 865 marking amplifier MRF9120LR3
Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these

Contextual Info: Preliminary CGA-3318 Product Description Sirenza Microdevice’s CGA-3318 is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance.

transistor z5

Abstract: erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 MRF392 redcap 7w120 transistor D 716
Contextual Info: Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

Macom marking code

Abstract: marking code macom
Contextual Info: Preliminary CGA-6618 Product Description Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration

marking code sirenza

Abstract: MARKING CODE CGA
Contextual Info: Preliminary CGA-3318 Product Description Sirenza Microdevice’s CGA-3318 is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance.

marking code sirenza

Abstract: macom marking
Contextual Info: Preliminary CGA-6618 Product Description Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration

SOIC-08

Abstract: macom marking ETC1-1-13 CGA6618 CGA-6618 CGA-6618Z macom rf amp ESOP-8 ESOP-8 Land pattern marking code macom
Contextual Info: CGA-6618 Product Description CGA-6618Z Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases

250M

Abstract: CGA3318 CGA-3318 ETC1-1-13 SOIC-08
Contextual Info: Preliminary CGA-3318 Product Description Sirenza Microdevice’s CGA-3318 is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance.

Contextual Info: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

Z1 Transistor

Abstract: MRF392
Contextual Info: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

rf push pull mosfet power amplifier

Abstract: class A push pull power amplifier marking us capacitor pf l1 MARKING WB1 MRF9120 MRF9120LR3 marking WB3 C2622
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of

MRF392

Abstract: TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125
Contextual Info: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

motorola L6

Abstract: linear amplifier 470-860 TPV7025
Contextual Info: MOTOROLA Order this document by TPV7025/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TPV7025 . . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal matching of both input and output along with use of a push–pull package

rf push pull mosfet power amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 9, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of

rf push pull mosfet power amplifier

Abstract: MRF9120 MRF9120LR3 marking WB4
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of

CGA-6618Z

Abstract: CGA6618 CGA-6618 CGA6618ZSB CGA6618ZSQ ETC1-1-13
Contextual Info: CGA-6618Z CGA-6618Z Dual CATV 1MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed

MRF9120

Abstract: MRF9120S
Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9120 MRF9120S N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

macom marking

Contextual Info: Preliminary CGA-6618 Product Description Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration

Contextual Info: Preliminary CGA-6618 Product Description Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration

MRF9120

Abstract: MRF9120S
Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these

MRF9120

Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 to 895 MHz band. The high gain and broadband performance of this