BALUN PUSH PULL Search Results

Contextual Info: The EMC balun replaces the coaxial cable or the printed circuit board PCB , traditionally used to match push pull amplifiers. Push pull amplifiers use a pair of balanced/unbalanced transmission lines (baluns) to provide the proper 180° out of phase signal configuration

TPV 3100

Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
Contextual Info: Order this document by AN1034/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1034 THREE BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the same package balanced, push-pull or dual transistors , must

balun push pull

Contextual Info: SURFACE MOUNT BALUNS ^ Save money in volume production by replacing manually installed baluns with our surface mount baluns! Available in tape-and-reel packaging. Patent pending. The EMC balun replaces the coaxial cable or the printed circuit board PCB , traditionally used to match push pull amplifiers. Push

Contextual Info: 3A512 SMT Low Impedance Balun VER11/8/00 Description: The 3A512 is a low profile balanced to unbalanced transformer designed for push-pull amplifiers in an easy to use surface mount package covering PDC applications. The 3A512 is ideal for high volume manufacturing and is

470 860 mhz AN

Contextual Info: 3A325 SMT Balun VER10/05/99 Features: Description: • • • • • • • The 3A325 is a low profile balanced to unbalanced transformer designed for push-pull amplifiers in an easy to use surface mount package covering TV broadcast applications. The 3A325 has an unbalanced

balun transformer 200 ohm

Contextual Info: 3W512 SMT Low Impedance Balun VER11/8/00 Description: The 3W512 is a low profile balanced to unbalanced transformer designed for push-pull amplifiers in an easy to use surface mount package covering DCS, PCS, W-CDMA and other 3G applications. The 3W512 is ideal for high

impedance transformer 50 ohm

Contextual Info: 3A412 SMT Low Impedance Balun VER11/3/00 Description: The 3A412 is a low profile balanced to unbalanced transformer designed for push-pull amplifiers in an easy to use surface mount package covering GSM, D-AMPS and NMT900 applications. The 3A412 is ideal for high volume

3A525

Contextual Info: Model 3A525 Rev. A Balun Transformers 50Ω to 25Ω Balanced Description The 3A525 is a low profile balanced to unbalanced transformer in an easy to use surface mount package covering Japanese PDC, DCS and PCS receive push-pull amplifier and mixer applications. The 3A525 has an

GSC371BAL2000

Contextual Info: HIGH POWER CHIP BALUN •Compact & High power handling. A "9 - W I S I T o •For Push-Pull ended power transistor. • 7 'V V I ^U 0 S S lca@ T ;T o •GSC-BAL series •Adjustment - free. Frequency Type Allowable Power [MHz] GSC184-BAL0600 120W 470-860 GSC172-BAL0800

AN025 Push-Pull High IP2 Amplifiers

Abstract: ECB-100331 NGA-486 sga-6289 C 32725 ETC1-1-13 AN025 wide bandwidth D 811-25
Contextual Info: DESIGN APPLICATION NOTE - AN025 Push-Pull High IP2 Amplifiers Abstract: With the abundance of data and voice traffic being transmitted across standard cable and wireless pathways and the ever increasing linearity requirements of CATV amplifiers, there is a great need for amplification that optimizes gain,

agilent ads balun

Abstract: EB212 MRF19125 MRF21180 J493 advanced design system
Contextual Info: Freescale Semiconductor Engineering Bulletin EB212 Rev. 0, 1/2004 Using Data Sheet Impedances for RF LDMOS Devices By: Darin Wagner INTRODUCTION This document explains the format used by Freescale for presenting LDMOS impedance information for both single - ended and push - pull devices on RF Power data

7472B

Abstract: RF push pull power amplifier 1008AF-901XKLC TC1-33-75G2 avx 603 TAT7472B LQH31HNR50K 001 soic TAT7472 ESD 2255
Contextual Info: 75 Ohm RF Amplifier 50-1000 MHz TAT 7472B Advanced Product Information Overview The TAT7472B is a general purpose push pull CATV 75 Ohm RF Amplifier designed for use up to 1000 MHz. It is fabricated using Triquint’s GaAs pHEMT technology to optimize performance and cost. This high

TRANSISTOR Z4

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

transistor z5

Abstract: erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 MRF392 redcap 7w120 transistor D 716
Contextual Info: Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

RF push pull power amplifier

Abstract: 7466 class A push pull power amplifier class B push pull power amplifier balun ntsc MABA-007681-CT2010 R81017 186MA 04025A151JAT2A balun push pull
Contextual Info: 75 Ohm RF Amplifier 50-1300 MHz TAT7466 Advanced Product Information Overview The TAT7466 is a 75 Ohm RF Amplifier designed for use up to 1300 MHz. The TAT7466 contains two separate amplifiers for push pull applications. It is fabricated using 6-inch GaAs pHEMT technology to

11978

Contextual Info: AH11 The Communications Edge TM High Dynamic Range Dual Amplifier Product Features • 150 – 3000 MHz • +44 dBm OIP3 balanced configuration • +48 dBm OIP3 (dual push-pull configuration) • Single-ended performance: ƒ 13.5 dB Gain ƒ 2.7 dB Noise Figure

Contextual Info: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

Z1 Transistor

Abstract: MRF392
Contextual Info: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

MRF392

Abstract: TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125
Contextual Info: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

thermistor r5t

Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
Contextual Info: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

6537 MARKING CODE

Contextual Info: AH11 The Communications Edge TM Product Information High Dynamic Range Dual Amplifier Product Features x 150 – 3000 MHz x +44 dBm OIP3 balanced configuration x +48 dBm OIP3 (dual push-pull configuration) x Single-ended performance: ƒ 13.5 dB Gain ƒ 2.7 dB Noise Figure

MRF373 PUSH PULL

Abstract: c19a chip resistor 1206 rogers C14A MRF373 MRF373 print circuit B07T MRF373S R7B Connector
Contextual Info: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.

MRF373

Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
Contextual Info: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

MRF373R1

Abstract: C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these