BA48A Search Results

CY62136CV30

Abstract: CY62136V
Contextual Info: 36CV30 ADVANCE INFORMATION CY62136CV30 MoBL 128K x 16 Static RAM Features power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE HIGH . The input/output pins (I/O0 through I/O15) are placed in a

CY62137CV18

Abstract: 1105
Contextual Info: CY62137CV18 MoBL2 128K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a

CY62136CV

Abstract: CY62136CV30 CY62136CV33 CY62136V
Contextual Info: CY62136CV30/33 MoBL CY62136CV MoBL 2M 128K x 16 Static RAM Features This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly

cy7c68000

Abstract: CY7C68000-56PVC CY7C68000-56PVCT
Contextual Info: CY7C68000 CY7C68000 TX2 USB 2.0 UTMI Transceiver Cypress Semiconductor Corporation Document #: 38-08016 Rev. *C • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised February 20, 2003 CY7C68000 TABLE OF CONTENTS 1.0 EZ-USB TX2 FEATURES . 3

CY7C68000

Abstract: CY7C68000-56PVC CY7C68000-56PVCT ba48
Contextual Info: CY7C68000 TX2 USB 2.0 UTMI Transceiver CY7C68000 TX2 USB 2.0 UTMI Transceiver Cypress Semiconductor Corporation Document #: 38-08016 Rev. *B • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised Novermber 15, 2002 CY7C68000 TABLE OF CONTENTS

CY7C1021BV33

Abstract: CY7C1021CV33
Contextual Info: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected

K6X0808C1D-BF55

Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Contextual Info: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI

CY62127BV

Abstract: CY62127BVLL-55ZI
Contextual Info: CY62127BV MoBL 1M 64K x 16 Static RAM Features significantly reduces power consumption when addresses are not toggling, or when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE

Contextual Info: CY62137CV18 MoBL2 128K x 16 Static RAM Features deselected CE HIGH or when CE is LOW and both BLE and BHE are HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are

Contextual Info: CY7C1041CV33 Automotive 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C The CY7C1041CV33 Automotive is a high performance CMOS

Contextual Info: CY62136CV18 MoBL2 128K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH . The input/output pins (I/O0 through I/O15) are

cy7c1041cv33-12zsxe

Contextual Info: CY7C1041CV33 Automotive 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C The CY7C1041CV33 Automotive is a high performance CMOS

CY7C1021CV33-10ZC

Contextual Info: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected

CY62126BV

Contextual Info: 26BV CY62126BV 64K x 16 Static RAM Features • 2.7V–3.6V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 54 mW (max.) (15 mA) • Low standby power (70 ns, LL version) — 54 µW (max.) (15 µA) • Automatic power-down when deselected

BA36B

Abstract: fBGA 80 package
Contextual Info: Package Diagrams Ball Grid Array Packages 36-Ball Thin BGA BA36A 51-85099-B 1 Package Diagrams 36-Ball 7.00 mm x 8.5 mm x 1.2 mm Thin BGA BA36B 51-85105-*C 2 Package Diagrams 42-Ball FBGA (7.0 x 5.0 x 1.2 mm) BA42 51-85139-*C 3 Package Diagrams 48-Ball (8.0 x 14.0 x 1.1 mm) Thin BGA BA47

CY7C1021CV33-10ZC

Abstract: CY7C1021BV33 CY7C1021CV33 TSOP 48 thermal resistance TSOP 48 thermal resistance junction to case CY7C1021CV33-10VXI FBGA PACKAGE thermal resistance
Contextual Info: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021CV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces

Contextual Info: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected

Contextual Info: CY7C67200 PRELIMINARY EZ-OTG Programmable USB On-The-Go Host/Peripheral Controller Cypress Semiconductor Corporation Document #: 38-08014 Rev. *D • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised May 28, 2003 PRELIMINARY CY7C67200

CY62136CV18

Contextual Info: CY62136CV18 MoBL2 128K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH . The input/output pins (I/O0 through I/O15) are

CY62137CV25

Abstract: CY62137CV30 CY62137CV33 CY62137V
Contextual Info: 47V CY62137CV25/30/33 MoBL 2M 128K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected

CY7C1021BV33

Contextual Info: 021BV33 CY7C1021BV33 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

bv48a

Abstract: CY62137CV CY62137CV25 CY62137CV30 CY62137CV33 CY62137V
Contextual Info: 137CV25/3 CY62137CV25/30/33 MoBL CY62137CV MoBL® 2M 128K x 16 Static RAM Features Life (MoBL®) in portable applications such as cellular telephones. The devices also has an automatic power-down feature that significantly reduces power consumption by 80%

CY62137CV25

Abstract: CY62137CV30 CY62137CV33 CY62137V
Contextual Info: 47V CY62137CV25/30/33 ADVANCE INFORMATION MoBL 128K x 16 Static RAM Features cantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are

CY7C68000

Abstract: CY7C68000-48 CY7C68000-56
Contextual Info: 68000 ADVANCE INFORMATION CY7C68000 CY7C68000 TX2 High-Speed USB Transceiver Cypress Semiconductor Corporation Document #: 38-08016 Rev. * • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 Revised February 12, 2002 ADVANCE INFORMATION