BA SO-8 MARKING CODE Search Results

80C166-M

Abstract: 80C166M SAB 80C166-M CB "marking ca" 80C166 80C166E 88C166 C166 TCL SERVICE MANUAL SAB 80C166 single step
Contextual Info: Microcomputer Components Technical Support Group Munich HL MCB AT 1 Errata Sheet March 20, 1996 / Release 1.0 Device : Stepping Code / Marking : SAB 80C166 - M, SAB 80C166 - M - T3 ES-DA, DA This Errata Sheet describes the functional problems see part A and the

C165

Abstract: C165-LF C165-LM C166 C167 SAF-C165-LM siemens microcontroller
Contextual Info: SIEMENS Microcomputer Components Technical Support Group Munich HL MCB PD/AT 2 Errata Sheet September 29, 1995 / Release 1.0 Device : Stepping Code / Marking : SAF-C165-LM ES-CA, ES2-CA This errata sheet describes the functional problems known in these steps.

KLT20

Abstract: k1648 klt22 KEL32 MC100 HEP64 KLT21 LP17 KEP32 HEP139
Contextual Info: AND8002/D ECLinPS, ECLinPS Lite, ECLinPS Plus, ECLinPS MAX, and GigaComm Marking and Ordering Information Guide http://onsemi.com APPLICATION NOTE Prepared by: Paul Shockman ON Semiconductor HFPD Applications Engineer Introduction This application note describes the device markings and

SAK-C167CS-LM

Abstract: c167cs-lm Bootstrap SAK-C167CS-L40M C167CS-32FM C167CS AP163703 C167CS-L40M SAK-C167CS-4R33M SAK-C167CS-4R40M SAK-C167CS-4RM
Contextual Info: Microcontrollers Errata Sheet November 30, 2000 / Release 1.0 Device: Stepping Code / Marking: Package: SAK-C167CS-LM SAK-C167CS-L33M SAK-C167CS-L40M SAK-C167CS-4RM SAK-C167CS-4R33M SAK-C167CS-4R40M ES-BA, BA P-MQFP-144-1 This Errata Sheet describes the deviations from the current user documentation. The

semiconductor T55 marking

Abstract: siemens C166 instruction set Siemens C16x Family Instruction Set Manual V6 marking code C163-L C165 C165-L SAB-C165-L25M SAB-C165-LM SAF-C165-L25M
Contextual Info: Microcontroller Components Errata Sheet November 2, 1998 / Release 1.1 Device: Stepping Code / Marking: Package: SAB-C165-LM, -LF SAF-C165-LM, -LF SAB-C165-L25M, -L25F SAF-C165-L25M, -L25F ES-FA MQFP-100, TQFP-100 This Errata Sheet describes the deviations from the current user documentation. The

Contextual Info: HAK, HBK, HCK Series www.vishay.com Vishay Draloric Ceramic Singlelayer DC Disc Capacitors, Class 2, Low Loss 0.5 % , 1 kVDC, 2 kVDC, 3 kVDC FEATURES • • • • • Low losses High stability Low DF minimizes self heating at HF Ideal for switching to 100 Hz

BA-STEP

Abstract: C166 C167 SAF-C165-LF C165 C165-LF C165-LM
Contextual Info: SIEMENS Microcomputer Components Technical Support Group Munich HL MCB PD/AT 2 Errata Sheet September 29, 1995 / Release 1.0 Device : Stepping Code / Marking : SAF-C165-LF ES3-CA This errata sheet describes the functional problems known in these steps. Problem classification and numbering is performed relative to modules. Since the

MOTOROLA LOT MARKINGS

Abstract: On semiconductor date Code IC Lot Code Identification marking code 6L QFN tray qfn 4x4 AND8002 ase qfn unisem QFN marking code onsemi Diode on alpha year and work week
Contextual Info: AND8002/D Clock Generation and Clock and Data Marking and Ordering Information Guide http://onsemi.com Prepared by: Paul Shockman ON Semiconductor APPLICATION NOTE Introduction This application note describes the device markings and ordering information for the following ON Semiconductor

AP2924

Abstract: C167 instruction set siemens C167 C166 C167 C167CR C167CR-LM SAK-C167CR-LM C166 I2C PEC single byte software
Contextual Info: Microcontroller Components Errata Sheet September 28, 1998 / Release 1.3 Device: SAK-C167CR-LM Stepping Code / Marking: ES-BE, BE Package: MQFP-144 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence

BC859B-AU

Abstract: transistor BC SERIES BC856B-AU
Contextual Info: BC856-AU,BC857-AU,BC858-AU,BC859-AU SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit：inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849

ELPIDA 512MB NOR FLASH

Abstract: nand mcp elpida MCP NOR FLASH SDRAM elpida Diskonchip MS08-D9SD7-B3 marking G3 QUALCOMM Reference manual nec 4 Banks x 1m x 32Bit Synchronous DRAM emblaze qualcomm 1100
Contextual Info: DiskOnChip-Based MCP Including DiskOnChip G3 and Mobile RAM Data Sheet, August 2004 • Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code

Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TXS0104E-Q1 SCES853A – NOVEMBER 2013 – REVISED APRIL 2014 1 Features 3 Description • • The TXS0104E-Q1 device connects an incompatible logic communication from chip-to-chip due to voltage

Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TXS0104E-Q1 SCES853A – NOVEMBER 2013 – REVISED APRIL 2014 1 Features 3 Description • • The TXS0104E-Q1 device connects an incompatible logic communication from chip-to-chip due to voltage

Contextual Info: N AUER PHILIPS/DISCRETE bb53R31 QDEb^Sb S47 H A P X bRE D Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode FEATURES • Plastic SMD envelope • High switching speed BAS16W QUICK REFERENCE DATA SYMBOL MAX. UNIT continuous reverse

MAL2117

Abstract: 28477E3 25109E3
Contextual Info: 117 ASD Vishay BCcomponents Aluminum Capacitors Axial, Smallest Diameter FEATURES • Polarized aluminum non-solid electrolyte electrolytic capacitors, RoHS • Axial leads, cylindrical aluminum case, insulated COMPLIANT with a blue sleeve • Taped for automatic insertion

cecc30301

Abstract: IEC 60384-4 marking date code capacitor SMD Vishay ASM 117 smd cr ba
Contextual Info: 117 ASD Vishay BCcomponents Aluminum Capacitors Axial, Smallest Diameter FEATURES • Polarized aluminum electrolytic capacitors, Pb-free non-solid electrolyte Available RoHS* • Axial leads, cylindrical aluminum case, COMPLIANT insulated with a blue sleeve

sot-23 MARKING CODE G1

Abstract: code marking 2M sot-23 sot23 marking m8 marking code T4 SOT-23 sot 23 marking code 2t A56 sot ferranti marking code FA sot23 FMMT-A56 amplifier A55 marking
Contextual Info: i FERRANTI FMMT-A55 FMMT-A56 T IIsemiconductorsL PNP Sili con Planar M e d i u m P o w e r Transistors D E S C R IP T IO N M e d iu m pow er transisto rs designed fo r sm all and am plification from d.c. to radio frequencies, in tio n s such as A u d io Frequency Am plifiers,

HCZ101

Abstract: HDE222 HAZ102 HAZ221 HCZ152 HAX222 HGZ101 HBZ101
Contextual Info: H. Vishay Draloric Ceramic High Voltage Disc Capacitors, Class 2 DESIGN: s max. Dmax. e max. Disc capacitors with epoxy coating HAZ, HAE, HAX HBZ, HBE, HBX HCZ, HCE, HCX HDE HEE HFZ, HFE HGZ L F±1 RoHS RATED VOLTAGE UR: V ± 0.5 COMPLIANT 1 kVDC 2 kVDC 3 kVDC

ba0 marking

Contextual Info: WED48S8030E 2M x 8 Bits x 4 Banks Synchronous DR AM DRAM FEATURES DESCRIPTION n Single 3.3V power supply The WED48S8030E is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 8 bits. Synchronous design allows precise cycle control with the

MICRON BGA PART MARKING

Abstract: RTT120 MT44K64M18 MT44K RLDRAM 3 MT44K32M36
Contextual Info: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRCmin = 10ns RL3-1600 – 1.25ns and tRCmin = 12ns (RL3-1600)

HBE10

Abstract: HCZ332 HBZ222 HBZ471 HAX223 hbz331 HCZ101 HFZ1 HGZ101 HBZ101
Contextual Info: H. Vishay Draloric Ceramic High Voltage Disc Capacitors, Class 2 DESIGN: s max. Dmax. e max. Disc capacitors with epoxy coating HAZ, HAE, HAX HBZ, HBE, HBX HCZ, HCE, HCX HDE HEE HFZ, HFE HGZ L F±1 RoHS RATED VOLTAGE UR: V ± 0.5 COMPLIANT 1 kVDC 2 kVDC 3 kVDC

BCX17

Abstract: BCX18R marking of m7 diodes sot 23 marking code T2 sot marking t5 T4 MARKING CODE I8 SOT23 Diode marking m7 t4 u4 BCX17R
Contextual Info: FERRANTI semiconductors BCX17 BCX18 PNP Si licon Planar M e d i u m P o w e r Transistors DESCRIPTION These devices are intended for saturated sw itching, general purpose sw itch in g and driver applications. Com plem entary to the BCX19 and BCX20. Encapsulated in the popular SO T-23 package these devices

512k x 8 chip block diagram

Abstract: WED9LAPC2B16P8BC WED9LAPC3C16V8BC
Contextual Info: White Electronic Designs WED9LAPC3C16V8BC 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION The WED9LAPC3C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous

WED9LAPC2B16P8BC

Abstract: WED9LAPC2C16V8BC
Contextual Info: WED9LAPC2C16V8BC White Electronic Designs 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES  DESCRIPTION The WED9LAPC2C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous