BA 887 Search Results

marking code js 3 pin diode

Abstract: ba sot23 BA diode JS-220 MA MARKING SOT23 marking code BA sot23 BA 30 C 052 marking on semiconductor sot marking code BA
Contextual Info: BA 887 Silicon PIN Diode Preliminary Data ● ● RF switch, RF attenuator for frequencies above 10 MHz Very low IM distortion Type Ordering Code taped Pin Configuration Marking 1 2 3 Package BA 887 Q62702- A SOT-23 C PDs Maximum Ratings Parameter Symbol

interbus

Abstract: BA RC wago 750
Contextual Info: 750-344 INTERBUS ECO Fieldbus Coupler 500 kbaud; digital and analog signals 750- 344 INTERBUS READY Fieldbus connection D-Sub Input Status indication -Fieldbus -Fieldbus note BA RC Data contacts RD I/O 01 02 03 04 Marking area Fieldbus connection D-Sub, Output

mt 1389 de

Abstract: A-838 94v0 MN 3058 380392-8 5-146132-1 bmep-5t smema specifications 5-103169-2
Contextual Info: AMPMODU Interconnection System AMPMODU .025 [0.64] Square Interconnection System AMPMODU Headers and Receptacles, .100 [2.54] Centerline 9-146252-0 87605-1 Bulkhead Header 6-534237-8 SR Top Entry 6-535541-0 SR Top Entry 87220-8 SR VT 6-146281-0 SR VT BA 87227-5

mt 1389 de

Abstract: smema conveyor wiring smema 5-146129-1 HORIZONTAL DEFLECTION D 2499 82007 5-103414-1 534267-1 8-87589-5 5-103169-1
Contextual Info: AMPMODU Interconnection System AMPMODU .025 [0.64] Square Interconnection System AMPMODU Headers and Receptacles, .100 [2.54] Centerline 87605-1 Bulkhead Header 6-534237-8 SR Top Entry 6-535541-0 SR Top Entry 87220-8 SR VT 6-146281-0 SR VT BA 87227-5 DR VT

wg 713

Contextual Info: F L C 103 WG C-Ba nd Power GciAs I E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Hem Symbol Condition Rating Unit Drain*Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 7.5 w °c °c Total Power Dissipation Tc = 25°C Pt Storage Temperature

Contextual Info: Dioden Diodes PIN-Dioden allgemeine und Schaltanwendungen PIN (General Purpose, Switching) Diodes Type Characteristics (2 a = 25 °C) Maximum Ratings Fr /f V mA CT pF at Fr V VF V Package at r, /F ä mA . a at h mA /r nA at Lead Code r* V • BA 582 35

Contextual Info: DATASHEET PCI e Ge n2 a nd QPI Clock for I nt e l-Ba se d Se r ve rs I CS9 3 2 S4 2 1 B Key Specifications: • PCIe Gen 2 compliant SRC outputs • QPI & FBD 2 compliant CPU clocks • CPU cycle-cycle jitter: < 50ps • SRC cycle-cycle jitter: < 125ps •

ts-82 switch

Abstract: 920HTC
Contextual Info: DigiTrace 920 Series Heat Trace Controller Installation, Operating, and Maintenance Manual Firmware versions # up to V3.2X Di giT ra ce A B SH IFT AL CK SE RI AR A/B LO 92 M MO NIT OR BA CK CO ES PR O HE GRAM AT TR MAB AC LE ING DU CO AL NT PO RO INT LLE R

Contextual Info: HF;?F KILIAQROE HIGH NMTEO OEJAV F\Xijg\h 1 Olt ebfdeqA 8<5> jj 1 8=D ptfq`efkd `^m^_fifqv 1 <hY afbib`qof` pqobkdqe /_bqtbbk `lfi ^ka `lkq^`qp0 1 Fobbm^db afpq^k`bA 87jj 1 Pbbqfkd YGH 7>773 7=:8 obfkclo`b fkpri^qflk 1 Solar`q fk ^``loa^k`b ql LHF =7:<48 ^s^fi^_ib

BSW 002 2nd year date sheet

Abstract: HB52C48EM-10 Hitachi DSA00196 Nippon capacitors
Contextual Info: HB52C48EM Series 32 MB Unbuffered SDRAM DIMM 4-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M × 16 Components ADE-203-887A (Z) Rev. 1.0 Jul. 23, 1998 Description The HB52C48EM belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB52C48EM Series 32 MB Unbuffered SDRAM DIMM 4-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M × 16 Components ADE-203-887A (Z) Rev. 1.0 July 23, 1998 Description The HB52C48EM belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been

NT5DS4M32EG-5

Abstract: NT5DS4M32EG NT5DS4M32EG-5G NT5DS4M32EG-6
Contextual Info: NT5DS4M32EG NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Advance Information 1M x 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL General Overview

Nippon capacitors

Contextual Info: HB52C48EM Series 32 MB Unbuffered SDRAM DIMM 4-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M × 16 Components ADE-203-887 (Z) Preliminary Rev. 0.0 Feb. 20, 1998 Description The HB52C48EM belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been

Contextual Info: HB52C48EM Series 32 MB Unbuffered SDRAM DIMM 4-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M x 16 Components HITACHI ADE-203-887 (Z) Preliminary, Rev. 0.0 Feb. 20, 1998 Description The HB52C48EM belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been

scr 106d

Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
Contextual Info: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007

Contextual Info: N04C1630E3AM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Advance Information N04C1630E3AM Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View

N04C1630E3AM

Abstract: N04C1630E3AM-7BI N04C1630E3AM-7TI
Contextual Info: N04C1630E3AM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Preliminary 32x04 Combination Memory Multi-Chip Package MCP 32Mb (2Mbx16) Dual Bank Flash Memory plus 4Mb (256Kbx16) SRAM 3.0V, 70ns Access Time, 66-Ball FBGA, Industrial Temperature Range

N08C1630E3AM-7BI

Abstract: N08C1630E3AM N08C1630E3AM-7TI
Contextual Info: N08C1630E3AM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Advance Information Low Voltage, Extended Temperature 32Mb FLASH and 8Mb SRAM Combo Memory 2Mbx16 bit Flash + 512Kbx16 bit SRAM OVERVIEW & FEATURES

N08C1630E3AM

Abstract: N08C1630E3AM-7BI N08C1630E3AM-7TI 32x08
Contextual Info: N08C1630E3AM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Preliminary 32x08 Combination Memory Multi-Chip Package MCP 32Mb (2Mbx16) Dual Bank Flash Memory plus 8Mb (512Kbx16) SRAM 3.0V, 70ns Access Time, 66-Ball FBGA, Industrial Temperature Range

N08C1630E3BM-7BI

Abstract: N08C1630E3BM-7TI
Contextual Info: N08C1630E3BM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Advance Information 32x08 Combination Memory Multi-Chip Package MCP 32Mb (2Mbx16) Dual Bank Flash Memory plus 8Mb (512Kbx16) PSRAM

N04C1630E3AM

Abstract: N04C1630E3AM-7BI N04C1630E3AM-7TI
Contextual Info: N04C1630E3AM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Advance Information Low Voltage, Extended Temperature 32Mb FLASH and 4Mb SRAM Combo Memory 2Mbx16 bit Flash + 256Kbx16 bit SRAM OVERVIEW & FEATURES

67-ball

Abstract: NanoAmp Solutions
Contextual Info: NanoAmp Solutions, Inc. N08C1618E6A 44MEG ASYNCHRONOUS/PAGE FLASH 1982 Zankerx Road, Jose, CA 95112 MEG x16 16San ASYNCHRONOUS/PAGE FLASH N08C1620E6A ph: 408-573-8878, FAX: 408-573-8877 52K x 16 SRAM COMBO MEMORY 512K x 16 SRAM COMBO MEMORY Advance Information

Contextual Info: 1234567897A 123452675829AB2C8DC9E57F99C9127BD63B 123456789ABC DEF289C AC A 123456761898AA9BCDEF6E 38A8FD865C8F66 BD86FD 86!!"666666 #$%%&65C8F666666 18D'6 C8 6 -D.)6 27DA)66 28)6 *+$6,"%6,""676#66666

BA 7277

Contextual Info: TM International Electronic Research Corporation A CTS Company 413 N. Moss St., Burbank, CA 91502 Tel: 818-842-7277 Fax: 818-848-8872 RoHS Certification Letter This letter certifies the component identified is compliant to EU Directive 2002/95/EC regarding the restriction on the use of certain hazardous substances RoHS in electrical