BA 243 RF Search Results

BA244

Abstract: BA243 diode 243 diode 244 DIODE BA243 BA diode ba 243 rf Q62702-A4
Contextual Info: SIEM ENS BA 243 BA 244 Silicon RF Switching Diodes • For VHF band switching in TV tuners • Not for new design Type Marking Ordering Code Pin Configuration BA 243 yellow Q62702-A521 Q62702-A421 BA 244 ¿ Kl 1 Package1 o DO-35 DHD EHA07001 Maximum Ratings

diode 244

Abstract: diode 243 diode ba 244 BA244S BA244 BA243 ba 243 rf DIODE BA243 Q62702-A607 ba capacitance diode
Contextual Info: SIEM EN S BA 243 S BA 244 S Silicon RF Switching Diodes • For VHF band switching in TV tuners • Low forward resistance and low diode capacitance • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 243 S yellow Q62702-A607 DO-35 DHD

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

ba 243 rf

Abstract: BA244 BA243 diode 244 ba capacitance diode ba rf JEDEC to 243
Contextual Info: «H» BA 243 •BA 244 'W Silizium-Planar-Dioden Silicon planar diodes Anwendungen: Bereichsumschaltung in VHF-Tunern Applications: Band selector in VHF-tuners Besondere Merkmale: Features: • Niedriger differentieller Durchlaßwiderstand im VHF-Bereich • Low differential forward resistance in

DIODE BA243

Abstract: BA243 BA243 diode 0588 JEDEC to 243 diode 244 BA244
Contextual Info: A E G CORP 17E QQETMab o o o ' m s D & 2 • BA 243 •BA 244 TjTSLGiiFüfllîiBSIMelectronic Creative Techno'ogres Silicon Planar Diodes A p p lica tio n s: Band selector in VHF-tuners Features: • Low differential forward resistance in VHF-range Low diode capacitance

BA389 PIN Diode

Abstract: ba389 BA284 V/BA389 PIN Diode BA389 diode
Contextual Info: ~ ä fl 8236320 SIEMENS/ Diodes ] > F |f l2 3 b 3 a o 001 4552 i S P C L , SEMÎCÔNÔS ~ 880 14252 D T ~ 0 1 - S Silicon RF switching diodes Glass package DO 35 Type Characteristics f A = 25°C) VR Applications Figure VHF tuners 10 Applications Figure

BA163

Abstract: dk qs BA 30 C Diode BA 163 BA244 QS700
Contextual Info: Silicon Capacitance Diodes Germanium Diodes Silicon Epitaxial Planar C apacitance Diode in DO-7 glass package w itn w ide e ffective capacitance variation fo r tun ing over the total fre­ quency range in short-wave, medium-wave, and long-w ave circu its Type

ba 243 rf

Contextual Info: POWER SPLITTERS/COMBINERS 2 WAY-180° 50 & 75Ω 10 kHz to 2 GHz SURFACE MOUNT SCPJ PSCJ-2 ZFSCJ-2 FREQ. RANGE MHz ZAPDJ-2 ISOLATION dB ZMSCJ-2 INSERTION LOSS, dB Above 3dB fL-fU L MJ U Typ.Min. Typ.Min. Typ.Min. Typ. Max. Typ. Max. Typ. Max. Max. Max. Max.

Contextual Info: Pow er Sputters/C om biners 2 Way- 180° 50 & 7 5 0 io kHz to2 ghz SURFACE MOUNT SCPJ PSCJ-2 ZFSCJ-2 FREQ. RANGE MHz MODEL NO. • ISOLATION dB L M Typ.Min. 30 26 25 20 27 20 — — 1-200 100-600 0.01-20 1-200 35 30 35 35 25 30 35 30 30 31 ZFSCJ-2-1 ZFSCJ-2-2

B66d

Abstract: B6650b
Contextual Info: 1 1232456773849AB732 4CDE457FC7A45C74334D2F37F4FCB3 5 12 5 4 4 4 5 5 4 5 9AB7324CDE457FC7A41147F4 7A4 4 !459A$%E&5255353'5 %E$%E55 %F ED)5*)+ 4 5 5 5 5 5 5 5 4 567897A94BC76DACEF4 4 15 547864 15 :EFA/F)/5%F)ED)5*)+55

sy 170

Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Contextual Info: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs­ Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170

Contextual Info: S I L I C . Q N SMALL CASKS: HIGH D I O D E S _ f f f l f T filfjifs / i iQ ljl v i 5j l i I S f i l S .A . SIGNAL,REFERENCES,MICROWAVE DO-35_ DO- 4 1_ F -126 SPEED SWITCHING DI ODES

P6KE150A

Abstract: SMBJ130A SMBJ170A SMBJ120A
Contextual Info: Transient Voltage Suppressors Part ¿lumber TVS SMBG110 SMBG110A SMBJ110 SMBJ110A P6KE130A SMBG120 SMBG120A SMBJ120 SMBJ120A P6KE150 P6KE150A P6KE160 SMBG130 SMBG130A SMBJ130 SMBJ130A P6KE160A P6KE170 P6KE170A P6KE180 SMBG150 SMBG150A SMBJ150 SMBJ150A P6KE180A

MRF24XA

Abstract: PCB Antenna matching carrier frequency offset estimation
Contextual Info: MRF24XA Low-Power, 2.4 GHz ISM-Band IEEE 802.15.4 RF Transceiver with Extended Proprietary Features Features Low-Power • IEEE 802.15.4™-2003 and IEEE 802.15.4-2006 Standard Compliant RF transceiver • Multiple air data rates: - 250 kbps IEEE 802.15.4

28F256L18

Abstract: S29WS256N intel MLC flash
Contextual Info: Spansion S29WS256N vs. Intel 28F256L18 Application Note The S29WS256N is a 256 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory which is manufactured on MirrorBit Technology. The scope of this document is to compare Spansion S29WS256N with Intel

ba3920

Abstract: BA 3922 BA3928 BA3930 9702FS 9329l BA3922 ba 243 rf 4S584 LZ 99
Contextual Info: IUHDU I l ZLV ZLl 8dOS/8dia BdOS ° 4 - —V Wl 951 —V ¥ P09fr 8SM-dOS 8Sdia (P00e)«dl0->IS £. _ ± <, 0\/ 0z zv 9£ 9‘0 9‘0 (A) mmm* (A) i/ a m # 9 6* 96> 9 9 (AlBfcCf m (A) 9 001 8 x >18 OV 9 001 8 x >12 (VUi)&^ia (A) 3 ra & * (su)xbw 01 (V '0 # a » £

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

NPN C1685

Abstract: C1685 transistor
Contextual Info: EO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N35 4N36 4N37 PACKAGE DIMENSIONS DESCRIPTION Æ db tft The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.

IEC61000-4-4

Abstract: MIL-PRF19500 UMA100A UMA12A UMA170CA UMA24A UMA51A
Contextual Info: UMA5.0A thru UMA170CA ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V SCOTTSDALE DIVISION PACKAGE BA package outlines except with a much lower profile height. Its robust configuration in a “2010” style MELF package prevents damage to extendedlead terminals and virtually eliminates inductive parasitics from fast rise-time

do-214ac footprint

Abstract: IEC61000-4-4 MIL-PRF19500 UMA100A UMA12A UMA170CA UMA24A UMA51A BA 567
Contextual Info: UMA5.0A thru UMA170CA ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V SCOTTSDALE DIVISION PACKAGE BA package outlines except with a much lower profile height. Its robust configuration in a “2010” style MELF package prevents damage to extendedlead terminals and virtually eliminates inductive parasitics from fast rise-time

Contextual Info: 244pin DDR3L SDRAM ULP Mini UDIMM DDR3L SDRAM Unbuffered ULP Mini-DIMMs Based on 4Gb A-Die HMT451M7AFR8A *SK hynix reserves the right to change products or specifications without notice. Rev. 0.1 / Oct. 2012 1 Revision History Revision No. History Draft Date

5KE400A

Abstract: 5ke400 AN6277 1.5KE6A N6277A 5KE300A 1.5KE*CA 5KE-400 5ke220a N6303A
Contextual Info: M¡erosemi Corp. diOClP P xp p rf. SCOTTSDALE, AZ F o r m o r e i n f o r m a ti o n call: 602 941-6300 FEATU R ES • EC O N O M IC A L • 1500 W ATTS P EA K P U L S E PO W ER DISSIPATION • STA N D O FF VOLTAGES FR O M 5.5V - 171V • U N IPO LAR OR DIPOLAR

f15a

Abstract: IEC61000-4-4 MIL-PRF19500 UMAF100A UMAF12A UMAF170CA UMAF24A UMAF51A UMAF54A
Contextual Info: UMAF5.0A thru UMAF170CA ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V SCOTTSDALE DIVISION ENVIRONMENTALLY LEAD-FREE PACKAGE BA package outlines except with a much lower profile height. Its robust configuration in a “2010” style MELF package prevents damage to extendedlead terminals and virtually eliminates inductive parasitics from fast rise-time

IEC61000-4-4

Abstract: MIL-PRF19500 UMAF100A UMAF12A UMAF170CA UMAF24A UMAF51A do-214ac footprint UltraMite UltraMite Package
Contextual Info: UMAF5.0A thru UMAF170CA ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V SCOTTSDALE DIVISION ENVIRONMENTALLY LEAD-FREE PACKAGE BA package outlines except with a much lower profile height. Its robust configuration in a “2010” style MELF package prevents damage to extendedlead terminals and virtually eliminates inductive parasitics from fast rise-time