BA 243 RF Search Results

ba 243 rf

Abstract: BA244 BA243 diode 244 ba capacitance diode ba rf JEDEC to 243
Contextual Info: «H» BA 243 •BA 244 'W Silizium-Planar-Dioden Silicon planar diodes Anwendungen: Bereichsumschaltung in VHF-Tunern Applications: Band selector in VHF-tuners Besondere Merkmale: Features: • Niedriger differentieller Durchlaßwiderstand im VHF-Bereich • Low differential forward resistance in

DIODE BA243

Abstract: BA243 BA243 diode 0588 JEDEC to 243 diode 244 BA244
Contextual Info: A E G CORP 17E QQETMab o o o ' m s D & 2 • BA 243 •BA 244 TjTSLGiiFüfllîiBSIMelectronic Creative Techno'ogres Silicon Planar Diodes A p p lica tio n s: Band selector in VHF-tuners Features: • Low differential forward resistance in VHF-range Low diode capacitance

BA389 PIN Diode

Abstract: ba389 BA284 V/BA389 PIN Diode BA389 diode
Contextual Info: ~ ä fl 8236320 SIEMENS/ Diodes ] > F |f l2 3 b 3 a o 001 4552 i S P C L , SEMÎCÔNÔS ~ 880 14252 D T ~ 0 1 - S Silicon RF switching diodes Glass package DO 35 Type Characteristics f A = 25°C) VR Applications Figure VHF tuners 10 Applications Figure

BA163

Abstract: dk qs BA 30 C Diode BA 163 BA244 QS700
Contextual Info: Silicon Capacitance Diodes Germanium Diodes Silicon Epitaxial Planar C apacitance Diode in DO-7 glass package w itn w ide e ffective capacitance variation fo r tun ing over the total fre­ quency range in short-wave, medium-wave, and long-w ave circu its Type

ba 243 rf

Contextual Info: POWER SPLITTERS/COMBINERS 2 WAY-180° 50 & 75Ω 10 kHz to 2 GHz SURFACE MOUNT SCPJ PSCJ-2 ZFSCJ-2 FREQ. RANGE MHz ZAPDJ-2 ISOLATION dB ZMSCJ-2 INSERTION LOSS, dB Above 3dB fL-fU L MJ U Typ.Min. Typ.Min. Typ.Min. Typ. Max. Typ. Max. Typ. Max. Max. Max. Max.

Contextual Info: Pow er Sputters/C om biners 2 Way- 180° 50 & 7 5 0 io kHz to2 ghz SURFACE MOUNT SCPJ PSCJ-2 ZFSCJ-2 FREQ. RANGE MHz MODEL NO. • ISOLATION dB L M Typ.Min. 30 26 25 20 27 20 — — 1-200 100-600 0.01-20 1-200 35 30 35 35 25 30 35 30 30 31 ZFSCJ-2-1 ZFSCJ-2-2

B66d

Abstract: B6650b
Contextual Info: 1 1232456773849AB732 4CDE457FC7A45C74334D2F37F4FCB3 5 12 5 4 4 4 5 5 4 5 9AB7324CDE457FC7A41147F4 7A4 4 !459A$%E&5255353'5 %E$%E55 %F ED)5*)+ 4 5 5 5 5 5 5 5 4 567897A94BC76DACEF4 4 15 547864 15 :EFA/F)/5%F)ED)5*)+55

MRF24XA

Abstract: PCB Antenna matching carrier frequency offset estimation
Contextual Info: MRF24XA Low-Power, 2.4 GHz ISM-Band IEEE 802.15.4 RF Transceiver with Extended Proprietary Features Features Low-Power • IEEE 802.15.4™-2003 and IEEE 802.15.4-2006 Standard Compliant RF transceiver • Multiple air data rates: - 250 kbps IEEE 802.15.4

FJ44

Contextual Info: O K I sem iconductor MSM65511 OKI ORIGINAL HIGH PERFORMANCE CMOS 8 BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION M SM 6 5 5 1 1 is a h igh -p e rfo rm an ce 8-b it sin gle -ch ip co n tro ller that em ploys O ki's o rigin al nX-8/50 CPU core. W ith a m inim um instruction executio n tim e o f 400 ns 10M H z clock , the M SM 65511 is

28F256L18

Abstract: S29WS256N intel MLC flash
Contextual Info: Spansion S29WS256N vs. Intel 28F256L18 Application Note The S29WS256N is a 256 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory which is manufactured on MirrorBit Technology. The scope of this document is to compare Spansion S29WS256N with Intel

NPN C1685

Abstract: C1685 transistor
Contextual Info: EO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N35 4N36 4N37 PACKAGE DIMENSIONS DESCRIPTION Æ db tft The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.

do-214ac footprint

Abstract: IEC61000-4-4 MIL-PRF19500 UMA100A UMA12A UMA170CA UMA24A UMA51A BA 567
Contextual Info: UMA5.0A thru UMA170CA ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V SCOTTSDALE DIVISION PACKAGE BA package outlines except with a much lower profile height. Its robust configuration in a “2010” style MELF package prevents damage to extendedlead terminals and virtually eliminates inductive parasitics from fast rise-time

Contextual Info: Appendix \ Tha Appandlx taction of thla catalog la a compilation of uaaful taohnloal Information that haa baan Inoludad for tha oonvanlanoa of our ouatomara. Cuatomara a n anoouragad to oontact tha factory; authortzad distributor or loot! npraaantatlva for additional Information

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

MT47H512M8

Contextual Info: 2GB, 4GB x72, ECC, DR 244-Pin DDR2 VLP Mini-RDIMM Features DDR2 SDRAM VLP Mini-RDIMM MT18HVS25672PKZ – 2GB MT18HVS51272PKZ – 4GB Features Figure 1: 244-Pin VLP Mini-RDIMM • 244-pin, very low profile mini registered dual in-line memory module (VLP Mini-RDIMM)

Alcatel optical transmitter

Abstract: 10 gb laser photodiode laser diode alcatel Alcatel dfb laser
Contextual Info: Alcatel 1922 LMS Uncooled Laser FlatPack Module 2.5 Gbit/s 1.3µm DFB Laser Description Applications The module contains an Alcatel uncooled DFB 1.3µm laser diode coupled to a singlemode tight-buffered fiber pigtail and housed in a Flat-Pack package with an optical isolator.

Contextual Info: R F H RF2431 MICRO DEVICES HIGH FREQUENCY LNA/MIXER Typ ical A p plications • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment • Spread Spectrum Communication Systems • General Purpose Frequency Conversion

DQ111

Contextual Info: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

ERA-3SM 03

Abstract: ERA-3SM 03 02
Contextual Info: M A m plifiers onolithic B ro a d ba n d to 8 dc ghz « ERA all specifications at 25°C low power, up to +13.5 dBm output MAXIMUM DYNAMIC POWER cffim RANGE at 2 GHz* a t 2 GHz* GAiN, dB Typical o FREQ. 6H z M ODEL# NO. I- I. 0.1 w r OVMfrequwcy, GH2 1 2

Contextual Info: SMAJ5.0 THRU SMAJ170A SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 5 .0 to 170 Volts 400 Watt Peak Power Pulse FEA TU RES ♦ For surface mounted applications D O -2 1 4 A C ♦ Low profile package ♦ Built-in strain relief .0 5 2 1 . 32 -1

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

Contextual Info: Latticc ispLSI 3256E ; ; ; Semiconductor • ■ ■ Corporation High Density Programmable Logic Features_ B Functional Block Diagram • HIGH-DENSITY PROGRAMMABLE LOGIC — 256 I/O Pins — 12000 PLD Gates — 512 Registers — High Speed Global Interconnect

p3c9 -00 01

Abstract: FPQ-256 pinout socket 754 ERC32 fpq-256-0.508-01 74LV04-U34 bra15 TSC695 xx245 Flash SIMM 72 29F040
Contextual Info: Evaluation Board TSC695 . User Guide Table of Contents Section 1 Introduction . 1-1

MT9JBF25672AKZ

Abstract: ddr3 vlp 244 pin
Contextual Info: 2GB x72, ECC, SR 244-Pin DDR3 SDRAM VLP Mini-UDIMM Features DDR3 SDRAM VLP Mini-UDIMM MT9JBF25672AKZ – 2GB Features Figure 1: 244-Pin VLP Mini-UDIMM • DDR3 functionality and operations supported as defined in the component data sheet • 244-pin, unbuffered dual in-line, 82mm, very low