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STMicroelectronics STB55NE06L Electronic Component
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ComSIT USA	STB55NE06L		40			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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Catalog Datasheet	Type	Document Tags	PDF
B55NE06 Abstract: STB55NE06 55ao s30120 Contextual Info: B55NE06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST B55NE06 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.022 Ω 55 A TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC	Original	STB55NE06 B55NE06 O-26rights B55NE06 STB55NE06 55ao s30120	PDF

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B55NE06

Abstract: STB55NE06 55ao s30120
Contextual Info: B55NE06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST B55NE06 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.022 Ω 55 A TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC

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STB55NE06 B55NE06 O-26rights B55NE06 STB55NE06 55ao s30120

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