B557 TRANSISTOR Search Results

B557 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

B557 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
b556 Abstract: PD67000 2222 kn a PD67030 B558 pd67020 F314 AN b559 F304 F424 Contextual Info: N E C 6427S2S N E C ELECTRONICS INC TÖ Ô Ê \| L.M275ES QQlTTñM fl J ~ D V - ^ /Z - ìS ' Bi-CMOS-4 ADVANCED PROCESS b ì-c m o s g a t e a r r a y s ELECTRONICS INC 98D 17984 NEC Electronics Inc. February 1988 Description Features The Bi-CM O S-4 gate arrays feature the high speed of	OCR Scan	6427S2S M275ES bM27525 I7993 T-45W/-/5 b556 PD67000 2222 kn a PD67030 B558 pd67020 F314 AN b559 F304 F424	PDF
VEB mikroelektronik Abstract: information applikation e435e information applikation mikroelektronik applikation heft fzl135 mikroelektronik Heft 12 D4803DC D718D "Mikroelektronik" Heft Contextual Info: Information Applikation Treiber IC aus dem HFO fr vrn" m m . . Information Applikation HEFT 53 NEUE TREIBERSCHALTKREISE v a b helbleifcerwerk F r a n k f u r t / o d e r botrwb im v«b kombinat mikroeloktranik \| KAMMER DER TECHNIK i * » _ J Ebertusstraße 2, Frankfurt Oder	OCR Scan		PDF

Catalog Datasheet

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b556

Abstract: PD67000 2222 kn a PD67030 B558 pd67020 F314 AN b559 F304 F424
Contextual Info: N E C 6427S2S N E C ELECTRONICS INC TÖ Ô Ê | L.M275ES QQlTTñM fl J ~ D V - ^ /Z - ìS ' Bi-CMOS-4 ADVANCED PROCESS b ì-c m o s g a t e a r r a y s ELECTRONICS INC 98D 17984 NEC Electronics Inc. February 1988 Description Features The Bi-CM O S-4 gate arrays feature the high speed of

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6427S2S M275ES bM27525 I7993 T-45W/-/5 b556 PD67000 2222 kn a PD67030 B558 pd67020 F314 AN b559 F304 F424

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VEB mikroelektronik

Abstract: information applikation e435e information applikation mikroelektronik applikation heft fzl135 mikroelektronik Heft 12 D4803DC D718D "Mikroelektronik" Heft
Contextual Info: Information Applikation Treiber IC aus dem HFO fr vrn" m m . . Information Applikation HEFT 53 NEUE TREIBERSCHALTKREISE v a b helbleifcerwerk F r a n k f u r t / o d e r botrwb im v«b kombinat mikroeloktranik | KAMMER DER TECHNIK i * » _ J Ebertusstraße 2, Frankfurt Oder

OCR Scan

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