B54 MARKING Search Results

Contextual Info: International k R ectifier HEXFET® Power MOSFET 4655452 0015b04 b54 • INR PD-9.618A IRFPF30 INTERNATIONAL RECTIFIER b5E T> • Dynamic dv/dt Rating • • • • • Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

Contextual Info: PNP medium power transistor Die no. B-54 These are epitaxial planar PNP silicon transistors. Features • available in a MPT3 MPT, SOT-89 package, see page 300 • collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at lc = 1 mA • • Dimensions (Units : mm)

transistor b54

Abstract: b54 marking
Contextual Info: PNP medium power transistor Die no. B-54 Dimensions Units : mm These are epitaxial planar PNP silicon transistors. MPT3 Features • • • available in a MPT3 (MPT, SOT-89) package, see page 300 1.6 ± 0 .1 -m collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at

Contextual Info: 3rd Angle System Unit : mm Drawing Not to Scale Tsuyama Matsushita Electric Co.,Ltd. Scope Control shown is designed in reference with our specifications. Also see samples attached. Mechanical Specifications : • Knob rotation angle • Knob stopper strength

marking g1

Abstract: marking HA 7 sot23 transistor bfs20 BFS20
Contextual Info: rZ 7 SGS-THOMSON WiCTOOieS BFS20 SMALL SIGNAL NPN TRANSISTOR Type Marking BFS20 G1 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . COMMON EMITTER IF AMPLIFIER SOT-23 ABSOLUTE MAXIMUM RATINGS

BFS55A

Abstract: Bfs 60 60dBi transistor b54
Contextual Info: SIEMENS BFS 55A NPN Silicon RF Transistor • For low-distortion broadband amplifiers up 1 at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFS 55A BFS 55A Q62702-F454

Contextual Info: MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

CJ1H-CPU65H

Abstract: CJ1G-CPU42H CJ1G-CPU45H CJ1M-CPU22 CJ1G-CPU43H CJ1M-CPU12 CJ1W-IC101 CJ1G-CPU44H CJ1M-CPU13 cj1w-oc211
Contextual Info: CJ1 SERIES Contents Smallest, Most Powerful Solution for Tomorrow’s Advanced Production Systems We shrank our most powerful programmable controller by 40% to fit industry’s most space-confined cabinets. All of Omron’s outstanding performance was retained in the process: That includes the mix of standard and special I/O

Contextual Info: SIEMENS BSP 17 SIPM O S Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • ^GS th = 2-1 4.0 V Type Vbs b f l DS(on) Package Marking BSP 17 50 V 3.2 A 0.1 ß SOT-223 BSP 17 Type BSP 17 Ordering Code Q67000-S220 Tape and Reel Information

TESDV5V0

Contextual Info: TESDV5V0A Steering Diode Structure ESD Protection Array Small Signal Diode SOT-363 Features ­Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) ­Meet IEC61000-4-4 (EFT) rating. 40A (5/50 s) ­Protects four high speed I/O lines ­Working Voltage : 5V ­Pb free version, RoHS compliant, and Halogen free

MARKING CODE a11 sot363

Abstract: POWER SUPPLY BOARD 94V
Contextual Info: TESDV5V0A Steering Diode Structure ESD Protection Array Small Signal Diode SOT-363 Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) —Protects four high speed I/O lines —Working Voltage : 5V

B1C DIODE

Abstract: IPB039N10N3 marking 1c marking a5 4r diode
Contextual Info: IPB039N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc +&1 Y" I9 ).( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

Contextual Info: IPB039N10N3 G  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H ( J R 9H"[Z#$YMc +&1 Y I9 ).( 6 P฀.5AH฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀"978฀3DAA5>C฀31@129<9CH

IPA105N15N3

Abstract: IPA105N15N 81a diode
Contextual Info: IPA105N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H -( J R  , ? >=1G )(&- Y" +/ I9 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P   S ? @5A1C9>7 C5=@5A1CDA5

IPB025N10N3

Abstract: IPB025 b1c diode marking a5 4r diode marking a5 4r diode b1c
Contextual Info: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

Contextual Info: IPA105N15N3 G TM  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H -( J R ,?>=1G฀ )(&- Y I9 +/ 6 P฀.5AH฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀ ฀S฀?@5A1C9>7฀C5=@5A1CDA5

65A3

Abstract: 5E DIODE marking c-9
Contextual Info: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R  , ? >=1G, & P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  I9   P ' 3 81>>5< >? A=1<<5E5<

Contextual Info: Product specification 2SB736A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features High DC Current Gain: hFE = 200 TYP. VCE = -1.0 V, IC = -50 mA 1 0.55 Complementary to 2SD780A. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

B52 transistor

Abstract: MARKING B52 b53 SMD transistor b54 2SB736A B53 transistor PT-200 2SD780A b54 marking B52 MARKING
Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB736A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features High DC Current Gain: hFE = 200 TYP. VCE = -1.0 V, IC = -50 mA 1 0.55 Complementary to 2SD780A. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Micro package.

IPP093N06N3G

Contextual Info: IPB090N06N3 G IPP093N06N3 G Id\Q "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R  , ? >=1G, & P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &    I9 .( J 1 Y" -( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z#

65a3

Abstract: be5a IPB025N10N3G V9910 95E-9
Contextual Info: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

Contextual Info: IPB090N06N3 G IPP093N06N3 G Id\Q  3 Power-Transistor Product Summary Features P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H .( J R ,?>=1G฀,& 1 Y I9 -(

Contextual Info: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G  3 Power-Transistor Product Summary Features V 9H . J P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , R ,?>=1G฀,& +&/ Y P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ (&