B5 TRANSISTOR Search Results

FZ400R33KF2

Abstract: 68nf b5 diode IGBT FZ 600
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 400 R 33 KF2 B5 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

TLP 527

Abstract: IR5065 transistor TIP 350 TLP-531 ST555 2N6676 IR5061 IR5066 ST-550 TLP 535
Contextual Info: kn| I SEnlCONDUCTOR TECHNOLOGY OSE D | fll3bM5fl □ D□ □ B5 *4 M [ 1 ^ * T - 5 S .- 0 / NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS Industry Type Power Dissipation @25 "C watts VCEV (volts) 2N6672 2N6673 2N6674 2N6675 2N6676 2N6672 2N6673

b5 transistor

Abstract: ir igbt FD800R33KF2-K b5 diode
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FD 800 R 33 KF2-K B5 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung

transistor c32

Abstract: TRANSISTOR CATALOGUE itt 2222 BLF348 Philips 809 08003 ITT 2222 A IEC134
Contextual Info: b b5 3 ^ 31 Philips S em iconductors 0030055 T 2 7 I B APX Product specification VHF linear push-pull power MOS transistor BLF348 N AMER PHILIPS/DISCRETE t'ÎE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability

FZ800R33KF2

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 33 KF2 B5 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

BUK438-500B

Contextual Info: PHILIPS INT ER NA TI O N AL b5 E D WB 711 Dfl2 b Db3 T3 1 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

philips ldh

Abstract: BUK101-50GL transistor sr 61
Contextual Info: P H ILIP S IN TE RN A TI ON A L b5 E D m 7 1 1 0 0 2 b 0 Gti3 7 T i Philips Semiconductors 7 Tb M P H I N Product Specification PowerMOS transistor BUK101-50GL Logic level DESCRIPTION QUICK REFERENCE DATA

Hitachi DSA002715

Contextual Info: HA1127, HA1127P, HA1127FP 5 Transistor Arrays Ordering Information Application Type No. Package Commercial use HA1127 DP-14 Industrial use HA1127P DP-14 HA1127FP FP-14DA Pin Arrangement C1 1 14 C5 B1 2 13 E5 substrate E1 3 12 B5 B2 4 11 C4 C2 5 10 E4 B2

Contextual Info: Philips Semiconductors b b5 3 T 31 D0317fl^ 573 | • APX Preliminary specification NPN HDTV video transistor ^ BFQ296 N FE A T U R E S AUER PHILIPS/DISCRETE b'lE D PINNING • High breakdown voltages • Low output capacitance PIN 1 emitter • High gain bandwidth product

MOC3021 and applications

Abstract: 8-pin optoisolator MOC3021 APPLICATION CIRCUITS TIP 43c transistor Precision triac control thermostat Opto-isolator MOC3021 amp03
Contextual Info: ANALOG DEVICES INC b5 E D ANALOG ► DEVICES FEATURES —55°C to +150°C —60°F to +300°F Operation ±0.5°C Accuracy Over Temperature (typ) Temperature-Proportional Voltage Output User Programmable Temperature Trip Points User Programmable Hysteresis

Contextual Info: B5 9 -9 7 2N3954, 2N3955, 2N3956 N-CHANNEL DUAL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW AND MEDIUM FREQUENCY A bsolute m axim um ratin gs at TA = 2 5 'C Reverse Gate Source & Reverse Gate Drain Voltage - 50 V Gate Current 50 mA Total Device Power Dissipation each side

HA1127

Abstract: Hitachi DSA0076 HA1127P DP-14 FP-14DA HA1127FP
Contextual Info: HA1127/P/FP 5 Transistor Arrays ADE-204-062 Z Rev. 0 Dec. 2000 Ordering Information Application Type No. Package Commercial use HA1127 DP-14 Industrial use HA1127P DP-14 HA1127FP FP-14DA Pin Arrangement C1 1 14 C5 B1 2 13 E5 (substrate) E1 3 12 B5 B2 4 11

Contextual Info: DMA20402 Silicon PNP epitaxial planar type Unit: mm For general amplification • Features  High forward current transfer ratio hFE with excellent linearity  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: B5

10Q4

Contextual Info: -u B tÆ iS E A fiiM - big p o w er mmm u PowerTech aao AMPERES PT ‘ S5 D1 PT-B5 Ü2 SILICON IMPN TRANSISTORS M A X IM U M FA T IN G S SYMBOL Col lector-B fise V o lta le PT "6501 PT6502 80V 100 V V CEO

Contextual Info: B5-8 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30â V(BR)CBO (V) I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

TIP12B

Abstract: tip127 texas tip 127 TIP127 tip 127 texas instruments 2n6128 TIP120 TIP121 TIP122 TIP125
Contextual Info: TEXAS INSTR ÎOPTOÏ 8961726 TEXAS b5 INSTR D E | flTblYSb □ D3fc.cl[]D 4 <OPTO> 62C 36900 TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C TO B E R 1 9 8 4 Designed For Complementary use with TIP 120, TIP 121, TIP 122

Contextual Info: SANKEN ELECTRIC CO LTD SSE D T'ì'ìDTm 000CH34 2 b5 H S A K J Silicon PN P Epitaxial Planar 2SB1258 ☆ Darlington ☆ Complement to type 2SD 1785 Application Exam ple: • Outline Drawing 4- Driver for Solenoid, Relay and Motor, and General Purpose •FM20

diode s6 6d

Abstract: MARKING 6B diode b86g s4si marking EB diode DIODE 4d gv marking 6B 6H MARKING diode IPP023N04N marking a6b
Contextual Info: IPP023N04N G Ie]R IPB023N04N G "%&$!"# 3 Power-Transistor Product Summary Features Q & ,  - 7@B( + :? 8 2 ? 5 . ? :? D6BB EAD:3 = 6 @G6B, EAA= I Q * E2 = :7:65 2 44@B5:? 8 D@ $     )# 7@BD2 B86D2 AA= :42 D:@? C V 9H ,( K R  , @? >2 H *&+ Z"

Contextual Info: B5-8Z Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)14 V(BR)CBO (V) I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

HA1127P

Abstract: HA1127 HA1127FP IC503
Contextual Info: HA1127, HA1127P, HA1127FP 5 Transistor Arrays Pin Arrangement C1 1 14 C5 B1 2 13 E5 substrate E1 3 12 B5 B2 4 11 C4 C2 5 10 E4 B2 6 9 B4 E2 7 8 C3 (Top view) Note: Use pin 13 as the lowest potential for this IC. 503 HA1127, HA1127P, HA1127FP Absolute Maximum Ratings (Ta = 25°C)

C2688

Abstract: c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688 TIP2955
Contextual Info: TEXAS INSTR {OPTO} 8961726 b5 TEXAS INSTR » F lfiT b lT S b D D 3b 3 62 C 3 6 9 9 8 OPTO TIP2955 P-N-P SILICON POWER TRANSISTOR JAN U ARY 1972 - REVISED OCTOBER 1984 • Designed for Complementary Use with TIP 3055 • 9 0 W at 2 5 ° C C a se Temperature

RLD2-1

Abstract: MB3752 fujitsu 1988
Contextual Info: FUJITSU MICROELECTRONICS 31E D • 3 7 M c]?b5 O O l S â b T I FMI February 1988 Edition 1.0 VOLTAGE REGULATOR The Fujitsu MB3752 Is a monolithic voltage regulator IC. It contains a temperature compensated reference voltage circuit, a surge protected error amplifier and high

WP02R

Contextual Info: ]= POWER fE CONVERTIBLES WP02R SERIES 2 WATTS REGULATED DC/DC C O N V E R T E R S LOW-COST, 2:1 WIDE INPUT RANGE FEATURES APPLICATIONS • • • • • TELECOMMUNICATION APPLICATIONS LOW-COST SMALL DIP PACKAGE SIZE FULL POWER TO +B5°C EXTENDED TEMPERATURE RANGE:

Contextual Info: I S 0C0P1 COMPONE NTS LTD 7SC D • 4 fl fl b5 1 0 OOOOllfl 270 ■ ISO 6 N 138, 6 N 139 LOW INPUT CURRENT, HIGH GAIN OPTO ISOLATORS ISOCOM, INC. 274 E. HAMILTON AVE. SUITE F CAMPBELL, CA. 95008 ABSOLUTE MAXIMUM RATINGS 25°C unless otherw ise noted FEATURES