B4L1 Search Results

B4L1 Price and Stock

Filter by Manufacturer

Select Manufacturer


TE Connectivity SSB4L12S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	SSB4L12S		94			1 - 10 - 100 $0.72 1000 $0.62 10000 $0.58	Buy Now
TE Connectivity SSB4L10S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	SSB4L10S		16			1 $0.79 10 $0.79 100 $0.72 1000 $0.62 10000 $0.58	Buy Now
Phoenix Contact PTTB-4-L-1000V Double-level terminal block - nom. voltage: 1000 V - nominal current: 32 A - connection method: Push-in connection - number of connections: 2 - cross section: 0.2 mm² - 6 mm² - AWG: 24 - 10 - width: 8.2 mm - height: 45.9 mm - color: gray - mounting type: NS 35/7 5 - NS 35/15
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	PTTB-4-L-1000V					1 $4.49 10 $4.49 100 $4.27 1000 $4.27 10000 $4.27	Buy Now
TE Connectivity AST4400C00100B4L1000-SS AST4400C00100B4L1000-SS: CTO-13000000-03
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	AST4400C00100B4L1000-SS					1 $399.74 10 $285.56 100 $285.56 1000 $285.56 10000 $285.56	Buy Now
TE Connectivity AST4400I00005B4L1000-SS AST4400I00005B4L1000-SS:CTO-13000000-03 MOQ Reduction
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	AST4400I00005B4L1000-SS					1 - 10 $285.56 100 $285.56 1000 $285.56 10000 $285.56	Buy Now

Find more B4L1 price and stock on Findchips.com

B4L1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay	Original	mbrs410lt3 r14525 mbrs410lt3/d	PDF
b4l1 Abstract: 3B marking SMC 403-03 MBRS410LT3 SMC case 403 MBRS410L Contextual Info: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay	Original	mbrs410lt3 r14525 mbrs410lt3/d b4l1 +43b marking smc 403-03 smc case 403 mbrs410l	PDF
b10f1 Abstract: b2a24 b4l1 B15Y b15e1 B17cc b23aa B15-B20 b12e24 B23AW Contextual Info: PIN NUMBER 43294-0240 PIN LENGTH 19.05/.750 PLATING 197 MATING “M” 11.43/.450 PCB “P” 4.37/.172 GOLD “G” N/A TIN “T” OVERALL PACKAGING PK-41661-001 STATUS A-41661-BNA197-* MATERIAL ENGINEERING VOIDS 26-48-1021 26-48-1031 26-48-1041 26-48-1051	Original	pk-41661-001 -41661-bna197--b2a197 -b3a197 +16-b4a197 -b5a197 -b6a197 -b7a197 -b8a197 -b9a197 b10f1 b2a24 b4l1 b15y b15e1 b17cc b23aa b15-b20 b12e24 b23aw	PDF
Contextual Info: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay	Original	mbrs410lt3 mbrs410lt3/d	PDF
M2KA Abstract: HEPC XS2F-D523-D80-A OMR H C3JW ly2f t2 YAZAKI Terminal7116-4022 WL01CA 54151A Contextual Info: We surveyed SVHC 161 substances. REACH/SVHC Information Product description SMCI XB. SMC TE SENSOR YA-JA01 PB FREE SENSOR YA-HC05 PBFREE SP SMC DI SENSOR YA-HC04 SMC DI SENSOR YA-JB01 SENSOR YA-HC09(SP) SENSOR YA-HA01PB-FREE(SP) SENSOR YA-HC09 SMC YA-JA02 A-TE SENSOR	Original	ya-ja01 ya-hc05 ya-hc04 ya-jb01 +14ya-hc09 ya-ha01pb-free ya-ja02 ya-hc18 ya-jb05 m2ka hepc xs2f-d523-d80-a omr h c3jw ly2f t2 yazaki terminal7116-4022 wl01ca 54151a	PDF
B4l1 Abstract: SMC case 403 Contextual Info: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay	Original	mbrs410lt3 b4l1 smc case 403	PDF
3B marking Contextual Info: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay	Original	mbrs410lt3 3b marking	PDF
SMC case 403 Abstract: MBRS410LT3 MBRS410LT3G MARKING MG diode b4l1 Contextual Info: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay	Original	mbrs410lt3 mbrs410lt3/d smc case 403 mbrs410lt3g +2marking mg diode b4l1	PDF