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onsemi NB4L16MMNG Translation - Voltage Levels 2.5V/3.3V 5Gb/s Driver/RCVR/Buffer
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NB4L16MMNG		100			1 $11.14 10 $8.92 100 $7.80 1000 $7.18 10000 $7.10	Buy Now
Nidec Corporation CF-TA-1DB4-L12 Toggle Switches SPDT, ON-ON, locking lever toggle, right angle gull wing terminals with bracket, 50mA @ 48V AC/DC, bulk packaging
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CF-TA-1DB4-L12					1 $10.00 10 $9.05 100 $7.45 1000 $6.42 10000 $6.42	Get Quote
Mitsubishi Electric PM50B4L1C060 IGBT Modules IPM MODULE L1-SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	PM50B4L1C060					1 - 10 $179.63 100 $179.63 1000 $179.63 10000 $179.63	Get Quote
Mitsubishi Electric PM75B4L1C060 IGBT Modules IPM MODULE L1-SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	PM75B4L1C060					1 - 10 $219.19 100 $219.19 1000 $219.19 10000 $219.19	Get Quote
onsemi NB4L16MMNR2G Translation - Voltage Levels 2.5V/3.3V 5Gb/s Driver/RCVR/Buffer
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NB4L16MMNR2G					1 - 10 - 100 - 1000 - 10000 -	Get Quote

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B4L1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay	Original	MBRS410LT3 r14525 MBRS410LT3/D	PDF
b4l1 Abstract: 3B marking SMC 403-03 MBRS410LT3 SMC case 403 MBRS410L Contextual Info: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay	Original	MBRS410LT3 r14525 MBRS410LT3/D b4l1 3B marking SMC 403-03 MBRS410LT3 SMC case 403 MBRS410L	PDF
b10f1 Abstract: b2a24 b4l1 B15Y b15e1 B17cc b23aa B15-B20 b12e24 B23AW Contextual Info: PIN NUMBER 43294-0240 PIN LENGTH 19.05/.750 PLATING 197 MATING “M” 11.43/.450 PCB “P” 4.37/.172 GOLD “G” N/A TIN “T” OVERALL PACKAGING PK-41661-001 STATUS A-41661-BNA197-* MATERIAL ENGINEERING VOIDS 26-48-1021 26-48-1031 26-48-1041 26-48-1051	Original	PK-41661-001 -41661-BNA197-* -B2A197 -B3A197 -B4A197 -B5A197 -B6A197 -B7A197 -B8A197 -B9A197 b10f1 b2a24 b4l1 B15Y b15e1 B17cc b23aa B15-B20 b12e24 B23AW	PDF
Contextual Info: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay	Original	MBRS410LT3 MBRS410LT3/D	PDF
M2KA Abstract: HEPC XS2F-D523-D80-A OMR H C3JW ly2f t2 YAZAKI Terminal7116-4022 WL01CA 54151A Contextual Info: We surveyed SVHC 161 substances. REACH/SVHC Information Product description SMCI XB. SMC TE SENSOR YA-JA01 PB FREE SENSOR YA-HC05 PBFREE SP SMC DI SENSOR YA-HC04 SMC DI SENSOR YA-JB01 SENSOR YA-HC09(SP) SENSOR YA-HA01PB-FREE(SP) SENSOR YA-HC09 SMC YA-JA02 A-TE SENSOR	Original	YA-JA01 YA-HC05 YA-HC04 YA-JB01 YA-HC09 YA-HA01PB-FREE YA-HC09 YA-JA02 YA-HC18 YA-JB05 M2KA HEPC XS2F-D523-D80-A OMR H C3JW ly2f t2 YAZAKI Terminal7116-4022 WL01CA 54151A	PDF
B4l1 Abstract: SMC case 403 Contextual Info: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay	Original	MBRS410LT3 B4l1 SMC case 403	PDF
3B marking Contextual Info: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay	Original	MBRS410LT3 3B marking	PDF
SMC case 403 Abstract: MBRS410LT3 MBRS410LT3G MARKING MG diode b4l1 Contextual Info: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay	Original	MBRS410LT3 MBRS410LT3/D SMC case 403 MBRS410LT3 MBRS410LT3G MARKING MG diode b4l1	PDF