MPQ3904
Abstract: motorola mpq3904
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad A m plifier Sw itching Transistor M PQ3904 NPN Silicon Motorola Preferred Device ita nin A3 rïïi rari it i rri LA J L rK J NPN r y i~V~" til l i j l i l Lil LLI l i l Lit MAXIMUM RATINGS Rating Collector-Emitter Voltage
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pq3904b3b7255132b2mpq3904+1motorola mpq3904
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C122B
Abstract: C122 c122D1 C122B1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA C122 1 Series Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled,
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21a-04cto-220abb3b7e553b725s+500t0207c122bc122c122d1c122b1
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Contextual Info: I NOT RECO M M EN D ED FO R NEW D ES IG N S MOTOROLA SC DIODES/OPTO BSE D • b3b72SS 0060*106 T - z S 'I S 2N 4168 thru Silicon Controlled Rectifiers 2N 4174 2N 4184 Reverse Blocking Triode Thyristors . . . multi-purpose PNPN silicon controlled rectifiers suited for industrial, consumer,
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b3b72sszn41682n41742n4184+12n4190
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W6 13A Diode
Abstract: 930 18a motorola zener 2a7 Motorola 581 1A6 Zener 139 v91 T 348 opto marking 314
Contextual Info: M O T O R O L A SC D I ODE S/ OPT O b3b7SSS 0DÔ1337 T 5SE D Order this data sheet by 1.5SMC6.8/D MOTOROLA SEMICONDUCTOR T-//-A 3 TECHNICAL DATA 1.5SMC6.8, A thru 1.5SMC200, A Zener O vervoltage Transient Su p p re ssors . the 1.5SM C6.8 series is designed to protect voltage sensitive com ponents from high
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b3b72s5w6 13a diode930 18a motorolazener 2a7+5motorola 5811a6 zener139 v91t 348opto marking 314
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WE VQE 24 E
Abstract: WE VQE 23 F vqe 24 e WE VQE 23 E vqe 14 vqe 13 vqe 14 E VQE 22 VQE 23 E vqe 24 d
Contextual Info: MOTOROLA Order this documenti by MHPM7B25A120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 5 hp Motor Drives MHPM7B25A120B This device is not recommended for new designs (This device is replaced by MHPM7A25S120DC3) 25 AMP, 1200 VOLT
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mhpm7b25a120b/dmhpm7a25s120dc3we vqe 24 ewe vqe 23 f+8vqe 24 ewe vqe 23 evqe 14vqe 13vqe 14 evqe 22vqe 23 evqe 24 d
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ZPD 5.1 ITT
Abstract: ITT ZPD 7.5 ITT ZPD 3.9 ZPD18 ITT zpd 3.3 itt ZPD ITT zener diode 3 3 ITT ZPD 4.3 ZPD13 ITT Zener diode itt diode zener 182
Contextual Info: MOTOROLA SC DIODES/OPTO D • h3b725S 00653^1 bO S ■ Section 4.2.4 Data Sheets Zener Voltage Regulator Diodes Section 4.2.4.1 Axial Leaded SECTION 4.2.4.1.1 500 mW DO-35 GLASS M U L T IP L E P A C K A G E Q U A N T IT Y (M P Q ) R E Q U IR E M E N T S
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do-351n746a1n759a1n957b+151n992b1n4370a1n4372a1n46781n4717zpd 5.1 ittitt zpd 7.5itt zpd 3.9zpd18 ittzpd 3.3 ittzpd itt zener diode 3 3itt zpd 4.3zpd13 ittzener diode ittdiode zener 182
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b6045
Abstract: DIODE B6045 MOTOROLA
Contextual Info: MOTOROLA Order this document by MBR6045WT/D SEMICONDUCTOR TECHNICAL DATA Advance Information M BR6045W T SW ITCH MODE Pow er R ectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the
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mbr6045wt/dbr6045wb3b75ss340k-01+2b6045diode b6045 motorola
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1N3491
Abstract: motorola 1n3495 1N3491R 1N3495 1N3493 1N3492 MR327R 1N3494 N349 MR331
Contextual Info: NOTOROLA SC -CDIODES/OPTOJ 1 5 E J> I t,3t?ass 0071533 0 T -— 0 1 — 1 7 , MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a t a S h e e t SILICON RECTIFIERS 25 AMPERE M E D IU M -C U R R E N T S IL IC O N R E C T IF IE R S 50-400 VOLTS DIFFUSED JUNCTION
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1n34911n34921n34931n3494+61n3495motorola 1n34951n3491rmr327rn349mr331
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WE VQE 23 F
Abstract: WE VQE 24 E 200 amp 120 V igbt rectifier bridge 300v 30a WE VQE 11 E 50 amp igbt IGBT 50 amp 1000 volt vqe 24 e WE VQE 23 E WE VQE 24
Contextual Info: MOTOROLA Order this documenti by MHPM7B30A60B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM7B30A60B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A30E60DC3) This module integrates a 3-phase input rectifier bridge, 3-phase
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mhpm7b30a60b/dmhpm7a30e60dc301qd3m3we vqe 23 f+9we vqe 24 e200 amp 120 v igbtrectifier bridge 300v 30awe vqe 11 e50 amp igbtigbt 50 amp 1000 voltvqe 24 ewe vqe 23 ewe vqe 24
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Contextual Info: MOTOROLA Order this document by MBRB3030CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MBRB3030CT Using the Schottky Barrier principle with a proprietary barrier metal. These state-of-the-art devices have the following features: • • •
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mbrb3030ct/dmbrb3030ct |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFE T A m p lifie rs BFR30LT1 BFR31LT1 N-Channel 2 SOURCE 1 2 CASE 3 1 8 -0 8 , STYLE 10 S O T -23 TO -236A B MAXIMUM RATINGS Symbol Value Unit D rain-Source Voltage VdS 25 Vdc G a te -S o u rce Voltage vgs 25 Vdc Symbol
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bfr30lt1bfr31lt1-236a3b725s |
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