B36 SURFACE MOUNT DIODE Search Results

DIODE B36

Abstract: part marking b36 diode Schottky Diode B36 marking B36 B36 Schottky Diode 1B marking semiconductor b36 b36 surface mount diode
Contextual Info: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

DIODE B36

Abstract: part marking b36 diode MBRS360T3 semiconductor b36 b36 diode 1B marking marking B36 b36 marking Schottky Diode B36
Contextual Info: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

marking B34 diode SCHOTTKY

Abstract: DIODE MOTOROLA B34 Schottky Diode 437 B34 b34 DIODE schottky diode schottky B34 motorola B34 diode SCHOTTKY MOTOROLA B34 diode BRS340T3 DIODE MOTOROLA B36 motorola package marking diodes b34
Contextual Info: MOTOROLA Order this document by MBRS340T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier M BRS340T3 M BRS360T3 . , . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-the-art geometry features epitaxial construction with

marking B32 diode SCHOTTKY

Abstract: marking B34 diode SCHOTTKY marking B33 diode SMC case 403 b34 DIODE schottky marking B32 DIODE B36 marking B3X MARKING B33 SMC diode code b3x
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

B333G

Contextual Info: Z1 SMA 1 . Z1 SMA 100 1W 7 @ + 5   <   Absolute Maximum Ratings Symbol Conditions Surface mount diode Zener silicon diodes    <    5 70 @ +  &% A   '  ;  <    5 C0        D   C7        D 

DIODE B36

Abstract: marking B34 diode SCHOTTKY diode marking b34 DIODE MOTOROLA B34 marking b34 b34 DIODE schottky motorola package marking diodes b34 diode schottky B34 DIODE B34 b34 marking
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBRS340T3 M BRS360T3 S u rfa c e M ount S c h o ttk y Pow er R ectifier Motorola Preferred Device . . . employing the Schottky Barrier principle in a large area metal-to-siiicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

J553

Abstract: j556
Contextual Info: L INTER F E T CORP 5bE D • 4S2bflS0 0 0 0 0 2 2 0 b ■ r -m/ r - z n B36 J553, J554, ]555, J556, 557 N-CH AN NEL SILICON CURRENT REGULATOR DIODES • CURRENT REGULATION • CURRENT LIMITING • BIASING absolute maximum ratings at 25°C free-air temperature

marking B34 diode SCHOTTKY

Abstract: b34 DIODE schottky diode schottky B34 DIODE MOTOROLA B34 DIODE B36 Schottky Diode B36 marking b34 DIODE B34 B36 schottky diode B34 schottky diode
Contextual Info: MOTOROLA SEMICONDUCTOR — — — TECHNICAL DATA MBRS340T3 MBRS360T3 S u rfa c e M o u n t S c h o tt k y P o w e r R e ctifie r Motorola Preferred Device . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and. metal

Contextual Info: Z1 SMA 1 . Z1 SMA 100 1W 7 @ + 5   <   Absolute Maximum Ratings Symbol Conditions Surface mount diode Zener silicon diodes    <    5 70 @ +  &% A   '  ;  <    5 C0        D   C7        D 

DIODE B36

Abstract: SMAB36 Schottky Diode B36
Contextual Info: SEMICONDUCTOR SMAB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES ᴌLow Profile Surface Mount Package. H A ᴌFor Use in Low Voltage, High Frequency inverters, Free D ᴌLow Power Loss, High Efficiency.

diode zener

Contextual Info: Z1 SMA 1 . Z1 SMA 100 1W 7 @ + 5   <   Absolute Maximum Ratings Symbol Conditions Surface mount diode Zener silicon diodes    <    5 70 @ +  &% A   '  ;  <    5 C0        D   C7        D 

DIODE B36

Abstract: marking B36 SMAB36 Schottky Diode B36
Contextual Info: SEMICONDUCTOR SMAB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES Low Profile Surface Mount Package. H A For Use in Low Voltage, High Frequency inverters, Free D Low Power Loss, High Efficiency. E Wheeling, and Polarity Protection Applications.

Contextual Info: Z1 SMA 1 . Z1 SMA 100 1W 7 @ + 5   <   Absolute Maximum Ratings Symbol Conditions Surface mount diode Zener silicon diodes    <    5 70 @ +  &% A   '  ;  <    5 C0        D   C7        D 

DIODE B36

Abstract: SMBB36
Contextual Info: SEMICONDUCTOR SMBB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 1 Wheeling, and Polarity Protection Applications.

Contextual Info: SEMICONDUCTOR SMBB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 Wheeling, and Polarity Protection Applications.

DIODE B36

Contextual Info: SEMICONDUCTOR SMCB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 Wheeling, and Polarity Protection Applications.

DIODE B36

Abstract: SMCb36
Contextual Info: SEMICONDUCTOR SMCB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 1 Wheeling, and Polarity Protection Applications.

Contextual Info: SEMICONDUCTOR SMCB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES ・Low Profile Surface Mount Package. B C ・Low Power Loss, High Efficiency. ・For Use in Low Voltage, High Frequency inverters, Free 2 1 Wheeling, and Polarity Protection Applications.

DIODE MOTOROLA B34

Abstract: marking B34 diode SCHOTTKY motorola b36 b34 DIODE schottky CASE 403-03 B34 motorola DIODE B36 diode b34 motorola b34 diode marking b34
Contextual Info: MOTOROLA Order this document by MBRS340T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS340T3 MBRS360T3 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with

5M MARKING CODE DIODE SMC

Abstract: SMC case 403 SMC 403-03 MBRS360BT3G Diode marking CODE 5M smb MBRS360T3 MBRS360T3G case 403 SMC MARKING part marking b36 diode
Contextual Info: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

DIODE ON SEMICONDUCTOR B34

Abstract: marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B3X b34 DIODE schottky b34 diodes on semiconductor MARKING B33 SMC 5M MARKING CODE DIODE SMC marking code onsemi Diode B34 marking B32
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: 2BZX84B3V0 . 2BZX84B47 300 mW 2BZX84B3V0 . 2BZX84B47 (300 mW) Surface mount Silicon Planar Dual Zener Diodes Silizium-Planar-Zener-Doppel-Dioden für die Oberflächenmontage Version 2014-04-04 Maximum power dissipation Maximale Verlustleistung 2.9 1.1

MBRS360T3G

Abstract: MBRS360T3 DIODE B36 part marking b36 diode
Contextual Info: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

ZENER B18

Abstract: b16 zener zener b27 zener 5B6 5B1 IR zener 5B1 zener 6b8 zener 3b9 zener B13 zener b30
Contextual Info: MM3Z2B4 . MM3B47 200 mW - 2% MM3Z2B4 . MM3B47 (200 mW - 2%) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2012-08-22 Maximum power dissipation Maximale Verlustleistung 1.7±0.1 1±0.1 Nominal Z-voltage – Nominale Z-Spannung