B34 ON Search Results

ic 8155

Abstract: "Slide Switch" DP4T SPST TOGGLE SWITCH OR SLIDE SWITCH SP6T switch 94hb ase42 SL220 MSSA204P1 MSSA4350RG miniature slide switch
Contextual Info: A B ASE/F Series - Page B3 SE Series - Page B9 STS Series - Page B11 TSS Series - Page B18 MSS Series - Page B21 MSSA Series - Page B31 MHS Series - Page B34 SSJ Series - Page B37 Need more technical information? Consult your Thomas & Betts sales office listed on the back cover

MBRS340

Contextual Info: MBRS340 MBRS340 Features • Compact surface mount with J-bend leads SMC • 3.0 Watt Power Dissipation package • 3.0 Ampere, forward voltage less than 500 mV SMC (D0-214AB) Color Band Denote Cathode Mark: B34 Schottky Rectifier Absolute Maximum Ratings*

din 41316

Abstract: Roederstein 41316 41316 DIN Roederstein Electronics din41316 Roederstein E roederstein gmf HE 310 din 41240 roederstein
Contextual Info: ROEDERSTEIN ELECTRONICS S3E 5 7fl El b34 00011Ö2 Roederstein Axial Electrolytic Capacitors Polarized Style, etched Electrodes, pulse proof GMF Climatic category: 40 / 085 / 56 bzw. 40 / 100 / 56 Capacitance tolerance: - 1 0 . +50 % min. 15 20 20 25 25 30

b34 marking

Abstract: Mark B34 FAIRCHILD MBRS340 MBRS340
Contextual Info: MBRS340 MBRS340 Features • Compact surface mount with J-bend leads SMC • 3.0 Watt Power Dissipation package • 3.0 Ampere, forward voltage less than 500 mV SMC (D0-214AB) Color Band Denote Cathode Mark: B34 Schottky Rectifier Absolute Maximum Ratings*

Contextual Info: D TbE • b34 bfl05 GG0137b T71 OTHER RATINGS Electrical Life: 100,000 cycles min. ST1-1 and ST2-1 only - other models 40,000 cycles min. resistive. Initial Contact Resistance: 3 milliohms max. at 3 VDC, 0.1 Amp. Insulation Resistance: Greater than 200,000 megohms between terminals and case ground.

Contextual Info: bôE J> m 4Û25771 GG13bai B34 « I D T CMOS PARALLEL 64 x 5-BIT FIFO WITH FLAGS IDT72413 INTEGRATED DEVICE FEATURES: DESCRIPTION: • • • The IDT72413 is a 64 x 5, high-speed First-In/First-Out FIFO that loads and empties data on a first-in-first-out basis.

PAD61

Abstract: CAP0805 GND12 PAD35 GND-10 5v1 ct led par64 74LVC04 PAD49 ad09
Contextual Info: A B C D E F G H 1 1 2 2 PCI {02,03,04,05} +5V +5V +3V 5V {02,03,04} +3V 5V {02,03,04} +3V +3V +3V +3V 3 3 PCI BUS0 +12V CONNPCI_64 3.3V B1 PTCK B2 B3 B4 B5 B6 4 INTB# {02,03,05} B9 C9 1 TDO +5V3 +5V4 B11 PRSNT1 PAD17 B32 PC/BE2# B33 PTMS B34 PTDI PIRDY# B35

smd rgb led PLCC4

Abstract: VLMRGB343-ST-UV-RS
Contextual Info: VLMRG B34 3. Se r ie s FEATURES • Black surface • AEC-Q101 automotive qualified • Qualified according to JEDEC moisture sensitivity level 2 • Compatible with IR reflow soldering • Environmentally friendly; RoHS-compliant • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Contextual Info: SC17720Y* * Series Voltage Detectors Technical Manual S-MOS Systems, Inc. October 1996 Version 1.0 Prelim inary S-MOS Systems, Inc. »150 River Oaks Pkwy •San Jose, CA 95134» Tel: (408) 922-0200 •Fax: (408) 922-0238 TTBETDT DOOMCHfl b34 TH IS P A G E INTENTIONALLY BLA N K

b34 DIODE 412

Abstract: CM400HA-12E diode b34 BP107
Contextual Info: b4E D • 7 2 ^ 4 ^2 1 OODbbTfi b34 * P R X CM400HA-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 „ .14 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43)41.14.1 P O W E R E X INC OUTLINE ORAWING

Contextual Info: bOE D • fl23Sb05 0D5G4bS b34 U S I E G EMENS SIEMENS AKTIEN6ESELLSCHAF TLE 4202 DC Motor Driver Bipolar 1C Features • Max. output current 3.0 A • Open-loop gain 80 dB typ. • PNP input stages • Large common-mode input-voltage range VPT0 5 1 0 8 • Wide control range

Contextual Info: D TbE • b34 bfl05 GG0137b T71 CONTACT RATINGS Q Power models - 6 Amps at 125 VAC, 3 Amps at 250 VAC or 7 Amps at 30 VDC resistive loads . B Dry Circuit models - 0.4 Volt-Amps (VA) max. at 20 V max. (AC or DC). UL models - 6 Amps at 125 VAC or 3 Amps at 250 VAC (75% power factor). UL file no. E66367.

DIODE marking 7AA

Contextual Info: m 14055452 DDi5]|ifi b34 International i «r Rectifier HEXFET Power M O S FE T • • • • • IN T E R N A T IO N A L pd-9.833 IRFI624G R E C T IF IE R Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating

gunn diodes

Abstract: gunn 4411 gunn diode 10.5 ghz
Contextual Info: NE W J A P A N R A D I O CO L T D MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POWER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw

diode b34

Abstract: Gunn Diode gunn diodes NJX4410 x-band motion detector 4420H gunn effect b34 diode diode a4t gunn diode oscillator
Contextual Info: NEW JAPAN RA D I O CO LTD MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POW ER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw or pulsed mode osillators. These Gunn diodes utilizing the bulk negative resistance effect can be easily obtained microwave

73B34

Abstract: NDL7511P1 DIODE on B34 NDL7511 NDL7161 7511P
Contextual Info: NEC ELECTRONICS INC bEE 5 • L427S5S 0 0 3 7 ^ 7 3 b34 H N E C E PRELIMINARY DATA SHEET M F " / / L A S E R D IO D E M O D U L E N D L 7 5 1 1 P , N P L 7 5 11 P 1 InGaAsP MQW-DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION NDL7511P and NDL7511P1 are 1 310 nm newly developed Multiple Quantum Well (MQW structure pulsed laser diode

sp8740

Contextual Info: G EC PLESSEY SEMI CONDS 43 E D H 37 bflS22 D D 13 b34 S • ^ 4 5 ' ^ -OS' GEC PLESSEY I s e m i c o n d u c t o r s SP8740 300MHz+5/6 SP8741 300MHz+6/7 T h e S P 8 7 4 0 and S P 8741 are E C L co u n te rs w ith E C L 10K c o m p a tib le o u tput. T h e S P 8 7 4 0 /S P 8 7 4 1 d ivid e by 5 an d 6

BFM SMC

Abstract: b34 marking smc bem 129 gez FAIRCHILD GHM marking code B34 MBRS340
Contextual Info: SMCJ5.0 C A - SMCJ170(C)A SMCJ5.0(C)A - SMCJ170(C)A Features • • • • • • Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less

Contextual Info: HI2303 HARRIS S E M I C O N D U C T O R Triple 8-B it, 50 M SPS, Video A/D C onverter W ith C lam p Function November 1997 Features Applications • Resolution 8-Bit ±1/2 LSB DL • Video Digitizing (Composite and Y-C) • Low Power Consumption (at 50 MSPS Typ)

Contextual Info: 3 6 THIS DR A WI N G COPYRI GHT IS UNPUBL IS HED. RELEASED 19 BY AMP F OR P U B L I C A T I O N ALL INCORPORATED. RIGHTS LOC RESERVED. DIST REVISIONS DF LTR 1 6 6 3 0 1 3 - 1 AS SHOWN ANÜ Ü I MENS I O U S . C ONTACTS , IF SEE SUBBEIEB, OESCRIPTION FOR

DO-214AB

Abstract: ON B34 diode b34 b34 diode do214ab DO214-AB b34 datasheet DO-214AB b34 B34 on FAIRCHILD MBRS340
Contextual Info: DO-214AB SMC Tape and Reel Data DO-214AB(SMC) Packaging Configuration: Figure 1.0 Packaging Description: DO-214AB(SMC) parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. Alternate carrier tape is made of antistatic plastic. The cover tape is a multilayer film (Heat

Contextual Info: □upnn 7231 S e r ie s SCSI I.D.C. Type Material: H o u sing: 30% Gloss filled PBT UL94V-0. C ontacts: Phosphor Bronze. Plating:Selective Gold plated. Electrical Characteristics: Current Rating: 1 AMP. In su la to r Resistance:5000MC3min. at DC 500V. C ontact R esistance: 20m0max. at DC 100mA.

Contextual Info: Verpackt in Gurtverpackung - Tape on Reel Packaging Verpackungseinheit: 560 Stück - Packaging unit: 560 pcs 48,26 3,25 1,27 1,8 45,13 44,13 72,5 150 46,33 0,03 330 41,91 - Reel off Direction 10 8,8 6,4 0,1 45,93 0,75 Leiterplatten-Layout Vorschlag für SMT

BA 5974

Abstract: lm 14D
Contextual Info: 5974 Series □ u p i in C e n tr o n ic C o n n e c to r S o ld e r Type M aterial: Housing: PET, UL94V-0 Rated. Contacts: Brci99. Plating:Selective gold plated on contact area nickel. Shell: Cold Roller Steel. E lectrica l C h aracteristics: Current Rating:! AMP.