B29F040 Search Results

AI01378

Abstract: M29F040 PLCC32 TSOP32 B29F040 512k x 8 chip block diagram plcc32 pinout
Contextual Info: M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical

M29F040

Abstract: PLCC32 plcc32 pinout TSOP32 B29F040
Contextual Info: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical

plcc32 pinout

Abstract: TSOP32 Package
Contextual Info: M29W040 VERY LOW VOLTAGE SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 100ns 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Sector: 1.5 sec typical

mm29f040

Contextual Info: SGS-THOMSON M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10jis typical ERASE TIME - Block: 1.0 sec typical - Chip: 2.5 sec typical

plcc32 pinout

Contextual Info: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Sector: 1.0 sec typical – Bulk: 2.5 sec typical

Contextual Info: SGS-THOMSON M29F040 ^7# ^0 g® i[L[lW®raD(gi 4 Mb (512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: lO^is typical ■ ERASE TIME