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    B210G Search Results

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    Advantech Co Ltd AIMB-210G2-S6B1E

    SBC 1.6GHZ 1 CORE 2GB/0GB RAM
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    DigiKey AIMB-210G2-S6B1E Bulk
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    Kyocera AVX Components 100B210GW500XC100

    MLC A/B/R - Waffle Pack (Alt: 100B210GW500XC100)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100B210GW500XC100 Waffle Pack 16 Weeks 100
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    • 100 $4.95
    • 1000 $4.24
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    Mouser Electronics 100B210GW500XC100
    • 1 $8.61
    • 10 $6.42
    • 100 $5.05
    • 1000 $4.33
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    Vishay Intertechnologies M55342E02B210GSWP

    M55342E 25PPM 0505 210 2% S WP - Waffle Pack (Alt: M55342E02B210GSWP)
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    Avnet Americas M55342E02B210GSWP Waffle Pack 16 Weeks 25
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    • 100 $11.79
    • 1000 $3.94
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    Vishay Intertechnologies M55342E02B210GSWI

    M55342E 25PPM 0505 210 2% S WI - Waffle Pack (Alt: M55342E02B210GSWI)
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    Avnet Americas M55342E02B210GSWI Waffle Pack 16 Weeks 25
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    • 100 $11.79
    • 1000 $3.94
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    Vishay Intertechnologies M55342K02B210GSWL

    Res Anti-Sulfured Thick Film 0505 210 Ohm 2% 1/8W ?100ppm/?C Molded Waffle - Waffle Pack (Alt: M55342K02B210GSWL)
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    Avnet Americas M55342K02B210GSWL Waffle Pack 1,000
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    B210G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MBRS2H100T3G

    Abstract: mbrs2h100 403D A210 MBRA2H100T3G B210G SMA CASE 403D-02 footprint
    Contextual Info: MBRS2H100T3G, MBRA2H100T3G Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBRS2H100T3G, MBRA2H100T3G 403Daws MBRS2H100/D MBRS2H100T3G mbrs2h100 403D A210 MBRA2H100T3G B210G SMA CASE 403D-02 footprint PDF

    Contextual Info: MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with


    Original     		MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, MBRS2H100/D PDF

    MBRS2H100T3G

    Abstract: B210G 403A-03 Schottky b210
    Contextual Info: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBRS2H100T3G MBRS2H100/D MBRS2H100T3G B210G 403A-03 Schottky b210 PDF

    SMA CASE 403D-02 footprint

    Contextual Info: MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with


    Original     		MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, MBRS2H100/D SMA CASE 403D-02 footprint PDF

    B210G

    Abstract: Schottky b210
    Contextual Info: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBRS2H100T3G MBRS2H100/D B210G Schottky b210 PDF

    NBRS2H100T3G

    Abstract: NBRS2H100 Schottky b210 A210G
    Contextual Info: MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with


    Original     		MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, A210G MBRS2H100/D NBRS2H100T3G NBRS2H100 Schottky b210 PDF

    B210G

    Abstract: Schottky b210
    Contextual Info: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBRS2H100T3G MBRS2H100/D B210G Schottky b210 PDF

    Contextual Info: MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with


    Original     		MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, A210G MBRS2H100/D PDF