B14 DIODE Search Results

Contextual Info: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on

Contextual Info: BAS19W/20W/21W Taiwan Semiconductor Small Signal Product SOT-323 100-250V/200mA Switching Diode FEATURES - Surface Mounted Device - Moisture sensitivity level 1 - Pb free and RoHS compliant - Fast Switching Speed - General purpose switching application SOT-323

B14 ZP

Abstract: b14 smd diode diode B14 zp B14 zp diode
Contextual Info: TSZL52C2V4 - TSZL52C39 CREAT BY ART 200mW SMD Zener Diode Small Signal Product Features 1005 ◇ 200mW power dissipation ◇ High voltages form 2 - 39 V ◇ Designed for mounting on small surface ◇ Extremely thin / leadless package ◇ Pb free product Mechanical Data

SOT-323 100-250V/200mA Switching Diode

Contextual Info: BAS19W/20W/21W Taiwan Semiconductor Small Signal Product SOT-323 100-250V/200mA Switching Diode FEATURES - Fast Switching Speed - Surface Mounted Device - Moisture sensitivity level 1 - Pb free and RoHS compliant SOT-323 MECHANICAL DATA - Case: SOT-323 package

Schottky

Contextual Info: RB520S-30 Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate

Schottky

Abstract: sot-23 MARKING CODE ZA smd code marking za
Contextual Info: RB706F-40 Low VF SMD Schottky Barrier Diode Small Signal SOT-323 Features ◇ Low reverse current, high reliability ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant

1ss133m

Contextual Info: 1SS133M Taiwan Semiconductor Small Signal Product 300mW, Hermetically Sealed Glass Switching Diodes FEATURES - Fast switching device trr < 4.0 ns - Through-hole mount device type - DO-34 package (JEDEC DO-204) - Hermetically sealed glass - Compression bonded construction

Contextual Info: BZS55B2V4 thru BZS55B36 Taiwan Semiconductor Small Signal Product 2% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 36V - Surface device type mounting - Matte Tin Sn lead finish with Nickel(Ni) underplate - Moisture sensitivity: level 1, per J-STD-020

zener Z6 SOT23-6

Contextual Info: BZX84C2V4 - BZX84C39 CREAT BY ART 300mW, Surface Mount Zener Diode Small Signal Product Features SOT-23 ◇ Planar die construction ◇ 300 mW power dissipation ◇ Zener voltages from : 2.4V - 39V ◇ Ideally suited for automated assembly processes Mechanical Data

marking b14 diode

Abstract: diode b14 b14 diode surface mount b14 smb diode diode schottky B14 marking code B14 diode MARKING CODE B14 marking B14
Contextual Info: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

marking b14 diode

Abstract: diode b14 marking code B14 diode MARKING CODE B14 b14 smb diode b14 diode surface mount
Contextual Info: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

100E3

Abstract: marking b14 diode
Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

diode schottky B14

Abstract: marking b14 diode
Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: TESDC5V0LC Bi-directional ESD Protection Diode Small Signal Product Features SOD-323 ◇ Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) ◇ Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) ◇ Protects one Bi-directional I/O line ◇ Working Voltage : 5V

IDTQS32X2384

Contextual Info: IDTQS32X2384 HIGH-SPEED CMOS 20-BIT BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 20-BIT BUS SWITCH DESCRIPTION: FEATURES: • • • • • • • Enhanced N channel FET with no inherent diode to VCC Low propagation delay and zero ground bounce

Contextual Info: IDTQS32X384 HIGH-SPEED CMOS 20-BIT BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 20-BIT BUS SWITCH FEATURES: • • • • • • • • IDTQS32X384 DESCRIPTION: Enhanced N channel FET with no inherent diode to VCC Ω bidirectional switches connect inputs to outputs

B14 diode on semiconductor

Abstract: marking b14 diode marking b14 on semiconductor marking code onsemi Diode B14 403D MBRA140T3 SMA MARKING 86 marking code B14 B14 marking code diode MARKING CODE B14
Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

b14 smb diode

Abstract: diode b14 MBRS140T3G marking B14 diode b14 diode surface mount AS 031 B14g smb marking code B14 5M MARKING CODE SCHOTTKY DIODE MBRS140T3
Contextual Info: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

Contextual Info: IDTQS32XVH384 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS32XVH384 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions

FCT16245

Abstract: QS316245
Contextual Info: QS316245 QuickSwitch Products High-Speed CMOS QuickSwitch 16-Bit WidebusTM Compatible Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS316245 1 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

QS32XR384

Abstract: B10-B14
Contextual Info: QS32XR384 QuickSwitch Products High-Speed CMOS 20-Bit Low Resistance Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS32XR384 1 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs

of ic 74245

Abstract: semiconductor WL 431 74245 20 pin ic pin diagram of ic 74245
Contextual Info: QS 316245 Q u ic k S w itc h P r o d u c ts High-Speed CMOS tZ o o o c i-c QuickSwitch 16-Blt Widebus Compatible Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 5£2 bidirectional switches connect inputs

QS32XVH245

Abstract: DIODE B12 bi-directional switches FET
Contextual Info: QS32XVH245 QuickSwitch Products 3.3V 16-Bit Bus Switch for Hot Swap Applications HotSwitchTM Q QUALITY SEMICONDUCTOR, INC. QS32XVH245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to VCC – No DC path to VCC or GND

74245 applications

Abstract: QS32X245 ttl 74245 B14 z diode Double high-speed switching diode QS32X2245 QVSOP
Contextual Info: QS32X245, QS32X2245 QuickSwitch Products High-Speed CMOS QuickSwitch Double Width Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS32X245 QS32X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs