B12 68 DIODE Search Results

BZX55

Abstract: BZX55-B15 zener b27 bzx b27 bzx55 024 BZX55B equivalent ZENER B18 zener B51 BZX b18 bzx b22
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation C C 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case

bzx55 024

Abstract: zener b27 ZENER B18 b16 zener BZX55 bzx b27 b2v4 b5v6 diode zener B16 BZX55B
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation C C 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case

MBC50-10B12

Abstract: 68b1 MBC50-8B1 MBC50-20B12 MBC50-82B1
Contextual Info: Capacitors: MNOS Series Bare Die • Low leakage current The Aeroflex / Metelics MIS capacitors utlize a silicon nitride dielectric over a thermally grown silicon dioxide base. The resultant composite dielectric exhibits low leakage current and insertion loss with excellent long-term stability. The

Power DIODE A30

Abstract: QS34XR245 b12 diode DIODE B12 41 QS34XR245Q3 QS3R245
Contextual Info: QS34XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit Low Resistance MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34XR245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs

diode b29

Abstract: QS34XVH245 B14 diode on semiconductor b12 diode DIODE B12 51 DIODE B21 DIODE B31 a30 DIODE DIODE A30
Contextual Info: QS34XVH245 QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot Swap Applications HotSwitchTM Q QUALITY SEMICONDUCTOR, INC. QS34XVH245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to VCC – No DC path to VCC or GND

DIODE B12 51

Abstract: TSG60N100CE IGBT 1000V .200A tsg60n100 B12 68 diode IGBT 1000V 60A
Contextual Info: TSG60N100CE N-Channel IGBT with FRD. TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1000 ±20 60 General Description The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers

diode A23

Abstract: QS3245 QS34X2245 QS34X245
Contextual Info: QS34X245, QS34X2245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34X245 QS34X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs

BZX55-B200

Abstract: BZX55B BZX55B2V0 BZX55B2V2 BZX55B2V4 BZX55B2V7 BZX55B3V0 BZX55B3V3 BZX55B3V6 BZX55B3V9
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case JEDEC DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Power Dissipation Ptot

bzx b27

Abstract: BZX55B27 13 BZX bzx 180 BZX 2.7 v BZX 5.1 15 BZX 18 BZX BZX55B equivalent BZX55B
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Max. 0.5 Max. 0.45 Min. 27.5 Max. 1.9 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band XXX Max. 3.9 ST Black Part No. XXX Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC

Contextual Info: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions

Contextual Info: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions

QS34XVH2245

Contextual Info: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions

Contextual Info: S QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot SwaP Applications HotSwitch ductor Inc q s 34xvh 245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to Vcc - No DC path to Vcc or GND - 5V tolerant in OFF state

diode a29

Contextual Info: QuickSwitch Products QS34XR245 High-Speed C M O S QuickSwitch t o ™ L o w Resistance MultiWidth™ Bus Switches ,in c. 3 2 - B it FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5Q bidirectional switches connect inputs

Contextual Info: QuickSwitch Products H QS34XR245 High-Speed CMOS QuickSwitch S emiconductor , I nc . ADVANCE in f o r m a t io n 3 2 ' B it L ° W R e s is ta n c e Multi Width Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc

IDTQS34X2245

Abstract: QS34X2245
Contextual Info: IDTQS34X2245 HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES FEATURES: • • • • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc

BXC DIODE

Contextual Info: Q u ic k S w itc h P ro d u c ts uality SQemiconductor , I nc . q s 34X383Q3 High Speed CMOS •x 32-Bit Bus Exchange Switches in M illipaQ 7M FEATURES/BENEFITS DESCRIPTION • Enhance N channel FET with no inherent diode to Vcc • bidirectional switches connect inputs

Contextual Info: 1 QuickS/vitch Products Hi gh-Speed CMOS Q ji ckSwi tch s iconducior,inc. QS34XR245 32- B t Low Resistance Multi Width™ Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5i2 bidirectional switches connect inputs

smd transistor mark E13

Abstract: Modified Coffin-Manson Equation Calculations senju solder paste m10 f12 A10D10 P6K6 BGA reflow guide Senju metal flux T5 k5m6 K793 T4V4
Contextual Info: MicroStar BGAt Packaging Reference Guide Literature Number: SSYZ015B Third Edition – September 2000 MicroStar BGA is a trademark of Texas Instruments Incorporated. Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

DIODE B12 41

Contextual Info: ÛUALITY SEMIC ONDUCT OR INC bSE D • 7MbfciöD3 GG013H3 TÔ4 QSFCT16244T, QSFCT162244T Advanced Information Ô High Speed CMOS 16-Bit Buffers QS74FCT16244T QS74FCT162244T FEATURES/BENEFITS • • • • 16-bit Function compatible to the 74F244 74FCT244 and 74FCT244T

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

DIODE B12 51

Abstract: a30 DIODE DIODE B12 54
Contextual Info: QS74FCT4X244T, QS74FCT4X2244T High-Speed CMOS Ö OO R i t P i i f f a r ¿ ¿ - D l l D U Iie r QS74FCT4X244ATQ3 QS74FCT4X244CTQ3 in MillipaQ QS74FCT4X2244ATQ3 FEATURES/BENEFITS DESCRIPTION • 32-bit Function compatible to the 74F244 74ABT244, 74FCT244T and 74FCT2244T

DIODE B12 51

Abstract: diode b27 diode b18 DIODE B23 diode b29 a30 DIODE 74ABT244 DIODE B21 millipaqtm QS74FCT4X2244ATQ3
Contextual Info: QS74FCT4X244T, QS74FCT4X2244T Q High-Speed CMOS 32-Bit Buffer in MillipaQ QS74FCT4X244ATQ3 QS74FCT4X244CTQ3 QS74FCT4X2244ATQ3 FEATURES/BENEFITS DESCRIPTION • 32-bit Function compatible to the 74F244 74ABT244, 74FCT244T and 74FCT2244T • QS74FCT4X244T: IOL = 64 mA