B1008 Search Results

BD 669

Abstract: transistor BD 140 BD 149 transistor XB1008-BD XB1008-BD-000V XB1008-BD-EV1 DM6030HK TS3332LD
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD September 2007 - Rev 17-Sep-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure Variable Gain with Adjustable Bias

Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT November 2009 - Rev 07-Nov-09 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias

SCL 8018

Abstract: DM6030HK TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1 transistor 7809
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD March 2007 - Rev 06-Mar-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing

DM6030HK

Abstract: TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD October 2009 - Rev 10-Oct-09 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure Variable Gain with Adjustable Bias

B1008-QT

Abstract: XB1008-QT
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT September 2007 - Rev 12-Sep-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias

tanaka TS3332LD

Abstract: DM6030HK TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD November 2010 - Rev 11-Nov-10 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure Variable Gain with Adjustable Bias

B1008-QT

Abstract: XB1008-QT XB1008-QT-0G00 XB1008-QT-0G0T XB1008-QT-EV1
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT March 2010 - Rev 13-Mar-10 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias

XB1008-QT-0G0T

Abstract: B1008-QT XB1008-QT XB1008-QT-0G00 XB1008-QT-EV1
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT August 2008 - Rev 17-Aug-08 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias

Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD March 2007 - Rev 06-Mar-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing

BD 207

Abstract: BD 669 transistor bd 138 DM6030HK TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1 ID130 SCL 8018
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD October 2008 - Rev 04-Oct-08 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure Variable Gain with Adjustable Bias

transistor B1204

Abstract: b1045 b1184 B1204 PTC Thermistor S1024 transistor b1045 transistor b1184 ptc S1122 B1076 PTC S1024
Contextual Info: PTC thermistors for telecom Leaded disks Series/Type: B59* Date: October 2006  EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

OS8104A

Abstract: OS8104 osaki cd player 384xFs IEC60958 medialb B-1017 B10089 "network interface controller" smsc OS8104A
Contextual Info: MOST Network Interface Controller Multimedia Network Protocol Chip OS8104A Enhanced Features „ „ „ „ „ „ „ „ „ „ „ „ The OS8104A is a value-priced option to the OS8104 Power consumption is reduced by 55% to 432 mW compared to the OS8104 controller

Contextual Info: B1000RW Series Compact 1 x 2 Inch 10W Wide Input Range DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features:

B1000RW

Abstract: B1004RW
Contextual Info: B1000RW Series Compact 1 x 2 Inch 10W Wide Input Range DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features:

B1045

Abstract: b1184 B1084 C1154
Contextual Info: PTC thermistors for overcurrent protection in telecom applications Leaded disks Series/Type: Date: January 2009 EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

B4404

Abstract: BS-2028 BS 5419 B1329 B589 B938 b2498 B1276 B549 BS-2021
Contextual Info: BURNDYWeld BCC-1 TYPE MOLDS Horizontal End to End BCC-1 Type Molds are used for horizontal end to end cable connections. Size range is #6 through 1000 MCM solid or concentric stranded copper conductors. Contact BURNDY Products for information on molds for

Contextual Info: W ire to Board Connectors A M P L IM IT E * Subm iniature D H D -2 0 Connectors Insert arrangements ♦ 6 © + ©5 © 9 9 Pos. Shell Size 1 i© + 9© + 4 + 4 I- + © 8 + 4 - + © IS IS Pos. (Shell Size 2) 1© © + JI + © © © '3 14© © + [f 4 © ©25

B1002RW

Abstract: B1008RW B1021RW B1016RW B1026RW b1023 B1015RW B1022RW 217F B1001RW
Contextual Info: B1000RW Series Compact 1 x 2 Inch 10W Wide Input Range DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input

node

Abstract: "network interface controller"
Contextual Info: MOST Network Interface Controller Multimedia Network Protocol Chip OS8104A Enhanced Features „ „ „ „ „ „ „ „ „ „ „ „ The OS8104A is a value-priced option to the OS8104 Power consumption is reduced by 55% to 432 mW compared to the OS8104 controller

NEC B1099

Abstract: NEC b1098 str 6307 B1284 B1273 B1329 nec b1669 B1134 b1686 STR S 6307
Contextual Info: BURNDY PRODUCTS BURNDYWeld BW-06 B BURNDYWeld™ Customer Service Open 8:00 am to 8:00 pm E.S.T. Monday — Friday Call Us At: 1-800-346-4175 FAX 1-800-346-9826 www.fciconnect.com 2 Customer Service: 1-800-346-4175 www.fciconnect.com BURNDYWeld™ TABLE OF CONTENTS

KE-G1250

Abstract: KE-G1250 mold compound KEG1250LKDS PI7C8150BNDIE-33 JESD22-A-113-E JESD22-A113E PI7C8150BND reflow profile PBGA 256 reflow profile PI7C8150BNDE QA-1800
Contextual Info: Pericom Semiconductor Corp. • 3545 North First St. • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 10-04 Means of Distinguishing Changed Devices: Date Issued: September 10, 2010 Product Mark Product(s) Affected: PI7C8150x (see affected part number list)

Siemens Ferrite B64290

Abstract: Siemens Ferrite n67 RM B66206-A2010 B65931CX22 B65535-B2 B66206J1106T1 B65820-B2001 L22 RM-8 B65611T250G48 b65935ax22
Contextual Info: Ferrite und Zubehör Ferrites and Accessories Lieferprogramm 2000 / Short Form Catalog 2000 http://www.epcos.com EPCOS AG Vorwort Preview Ferrite sind unverzichtbare Schlüsselkomponenten in vielen modernen Hochleistungstechnologien. Sie finden immer neue Anwendungen in der

Transistor C1173

Abstract: b1045 C1173 transistor b1184 transistor b1184 c1173 PTC S1023 C1154 b1045 ON C1184
Contextual Info: PTC thermistors for overcurrent protection in telecom applications Leaded disks Series/Type: Date: December 2010 EPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

38n30

Abstract: P733 epcos t250 p732 K1020 N41 250 B62152 L743 B64290 P709
Contextual Info: Пассивные компоненты ФЕРРИТЫ И АКСЕССУАРЫ Фирма "Epcos" разрабатывает и производит магнитомягкие оксидно керамические ферриты на основе MnZn и NiZn под названием SIFERRIT. Превосходные свойства этих ферритов позволяют