B10 DIODE Search Results

laser diode symbol schematic

Abstract: Spectra-Physics* pump uncooled laser butterfly B10-915 B10-975 schematic power diode laser module pump Spectra-Physics 975 laser fiber
Contextual Info: Product Summary Uncooled Multimode Pump Laser Modules B10-915 B10-975 Multi-mode Pump Laser modules from Features Spectra-Physics Telecom are available at ▲ Fiber-coupled power output of over 1 W ▲ 100 µm core, 0.15 NA high-brightness fiber-coupled output

CREE XM-L T6

Contextual Info: Reference Design AL9910EV8 Non-Dimmable 120VAC Evaluation Board Case #1: Input=120VAC; Output=48V/90mA Case #2: (Input=120VAC; Output=96V/45mA) Applications: B10 Light Bulbs -Customer: CreeDate: October 27, 2011 This document contains Diodes confidential and proprietary information

CT502

Abstract: CS5-08 ct511 CB560 1608 B 100NF CB548 CB557 CB558 Ct513 CS507
Contextual Info: 5 Schematic Diagrams and PCB Silkscreen 5-1-5 Parts List Location SEC Code B1 3301-000326 CORE-FERRITE BEAD;AB,3.2x2.5x1.3mm,1000,3000G A-3 Bot B10 3301-000361 CORE-FERRITE BEAD;ZZ,5X2X0.9mm,-,- B-3 Bot B11 3301-001101 CORE-FERRITE BEAD;AB,2.0x0.9x0.5mm,-,-

Contextual Info: G E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N 25 , 4N 26, 4N 27 , and 4 N 2 8 series of optocouplers ' t t H 6.86 MAX B10 w I Πcoupled to a gallium arsenide diode. _ i _ 8.89 8.38 have an NPN silicon planar phototransistor optically

FCH20B1

Abstract: 20B10
Contextual Info: SBD T y p e : FCH FCH20B1 20B10 B10 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings

5v 10mA reed relay

Abstract: 5 pin relay 12vdc US Relays and Technology RS-421 relay 12vdc with diode 5 pin relay 12vdc free download
Contextual Info: B10 RF Relays Ball Grid Array Relays Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter RF paths in a controlled 50 Ω environment to minimize signal attentuation. The designer is now able to switch or pass signals with

20B10

Contextual Info: SBD T y p e : FCH FCH20B1 20B10 B10 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings

5v 10mA reed relay

Abstract: "coil capacitance"
Contextual Info: B10 RF Relays Ball Grid Array Relays Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter RF paths in a controlled 50 Ω environment to minimize signal attentuation. The designer is now able to switch or pass signals with

T2D DIODE

Abstract: T2d 86 diode T3D DIODE T2D 87 diode T2D DIODE 49 T2D DIODE 94 AK9 RJ12 transistor ad149 T2D 79 diode C1959
Contextual Info: 5 4 3 VIO 2 1 VCC3V3 C2 C1 + AD[31:0] 0.1uF 22uF B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 D VCC5V AD31 AD29 AD27 AD25 VCC3V3 AD21 AD19 VCC3V3 AD17 -CBE2 -IRDY VCC3V3 -DEVSEL -LOCK -PERR -SERR VCC3V3 -CBE1 AD14 VCC3V3 AD12 AD10 AD8 AD7 VCC3V3 AD5 AD3 AD1 VIO VCC5V

diode T 3512

Abstract: D-68623 E72873 ds 35-12 e ixys MWI 35-12 A5
Contextual Info: MWI 35-12 A5 IC25 = 45 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C

D-68623

Abstract: E72873
Contextual Info: MWI 50-12 A5 IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C

842 ic

Abstract: D-68623 E72873 IC N10
Contextual Info: MWI 75-12 A5 IC25 = 90 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C

RM3 transistors

Abstract: B13 transistors
Contextual Info: BIPOLAR TRANSISTORS E q u ivalen t Circuit F W D : F ree w h e e l d io d e S U D . S p e e d u p d io d e F R D : F ast re c o v e ry d iode Fig. A1 Fig. B1 Fig. B2 Fig. B3 Fig. B4 Fig. B5 Fig. B6 Fig. B8 Fig. B9 Fig. B11 Fig. B12 D io d e Diode Fig. B10

Contextual Info: Technical S pecification PQ60260HTB10 48V in 26Vout 250W 2000Vdc Half-brick Input Output Power Isolation DC/DC Conver ter Th e P Q6 0260HT B10 PowerQ or Tera co nver ter is a nextgen er a tio n, b oa rd - mou nt a bl e, iso la t ed , fix ed swit c hin g fr e q u enc y d c/d c con v er te r t ha t u s es s yn ch r ono u s re ct ifica t ion

TSC5303D

Abstract: diode b10 250V transistor npn 2a
Contextual Info: TSC5303D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

2D175D

Abstract: 2D175D-055A ETF81-050 ETN81-055 EVL32-055 M104 M105 M203 M208 EVK31-050
Contextual Info: O BIPOLAR TRANSISTOR MODULES Ratings and Specifications g y j 600 volts class pow er transistor modules • • • • P o w e r transistors and fre e w h e el diodes are b uilt into one package. All te rm in a ls are insulated fro m m o u n tin g plate.

EVL31-050

Abstract: EVM31-050A EVK31-050 EVK71-050 EVL32 ETF81-050 2DI75D-055A M101 M104 M105
Contextual Info: g j j j i BIPOLAR TRANSISTO R M O D ULES rnmmmHsM Ratings and Specifications H y • • • • 6 0 0 v o lts class p o w e r tra n s is to r m o d u le s P o w er transistors and fre e w h e e l diodes are b uilt into one package. All term in a ls are insulated fro m m o u ntin g plate.

2DI75D-055A

Abstract: M104 ETF81-050 EVL32 M101 M105 M201 EVM-31 transistor bI 340
Contextual Info: g j j j i BIPOLAR TRANSISTO R M O D ULES rnmmmHsM Ratings and Specifications H y • • • • 6 0 0 v o lts class p o w e r tra n s is to r m o d u le s P o w er transistors and fre e w h e e l diodes are b uilt into one package. All term in a ls are insulated fro m m o u ntin g plate.

2A marking MMBT3906

Abstract: DIODE MARKING CODE B10 MMBT3906 2a MMBT3906 marking code 2a MARKING P1 TRANSISTOR SOT-23 2A MMBT3906 on SOT-23 marking 2a Diode SOT-23 marking 3V
Contextual Info: MMBT3906 300mW, PNP Small Signal Transistor Small Signal Diode SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: TESDA5V0A Low Capacitance ESD Protection Array Small Signal Diode SOT-23 A Features F B E ­Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) ­Meet IEC61000-4-4 (EFT) rating. 40A (5/50ns) C ­Meet IEC61000-4-5 (Lightning) rating. 12A (8/20 s) G D ­Protects two directional I/O lines

8s sot23

Abstract: IEC61000-4-4 "SIGNAL DIODE"
Contextual Info: TESDA5V0A Low Capacitance ESD Protection Array Small Signal Diode SOT-23 A F B Features E —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ns) C —Meet IEC61000-4-5 (Lightning) rating. 12A (8/20 s) G D —Protects two directional I/O lines

MSOP-08

Abstract: USB3.0 schematic USB3.0 Connector dimension usb3 schematic tesdm5v0a cde tsc MSOP08 IEC61000-4-4 UC68M DIODE MARKING CODE B10
Contextual Info: TESDM5V0A Ultra Low Capacitance ESD Protection Array Small Signal Diode MSOP-08 F A I Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) B —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ns) E —Protects six high speed I/O lines —Low leakage, Low Operating and Clamping Voltage

Contextual Info: TESDM5V0A Ultra Low Capacitance ESD Protection Array Small Signal Diode MSOP-08 F I A Features ­Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) B ­Meet IEC61000-4-4 (EFT) rating. 40A (5/50ns) E ­Protects six high speed I/O lines ­Low leakage, Low Operating and Clamping Voltage

smd diode marking kda

Abstract: smd dual diode code 68 KDU SOT-23 kds 0037 kdn 010 smd code kd4 DIODE ZENER smd marking 72 B10 zener diode MARKING KD6 SOT-23 KDQ 11
Contextual Info: AZ23C2V7-AZ23C51 300mW, Dual SMD Zener Diode Small Signal Diode SOT-23 A Features F B E Wide zener voltage range selection : 2.7V to 51V VZ Tolerance ≦ ±5% C Moisture sensitivity level 1 D Matte Tin Sn lead finish Pb free version and RoHS compliant