B-500 DIODE Search Results

rph3

Abstract: LM 588 hydrogen diode gas-discharge voltage
Contextual Info: Ryazan Plant of Electronics P H 3 A H C K M M 3 A BOA 9J1ËKTP0HHMX 1PMBOPOB HMnynbCHUR ahoa IULS1D DIODI rKfl1-500/20 rt«r • . •H m rKül-500/20 - r a 3opaapHflHbift BHÖponpoHHbi# npu6op c o k c h a h u m kbtoaom KocBeHHoro HflKana h boaopoahmm Hano/weHHeM. npeaHasHaneH ana paÖOThi b xanecTB K/THnnepHoro, 3aiuHTHoro, 3apnflHoro hjih BeHTHjn>Horo anona b cneiinam> ho ft annapaType. 0 <J opMneHHe MeTajuioKepaMKHecxoe.

Contextual Info: SIEMENS BUZ 45 BUZ 45 A, BUZ 45 B SIPMOS Power Transistors • • N channel Enhancement mode Type Vos To ^DS on Package ’> Ordering Code BUZ 45 500 V 9.6 A 25 ”C 0.6 £2 TO-204 AA C67078-A1008-A8 BUZ 45 A 500 V 8.3 A 25 'C 0.8 n TO-204 AA C67078-A1008-A9

1N5200

Abstract: 1n5226b 1N5250B 20 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B
Contextual Info: Absolute Maximum Ratings* Symbol PD Tolerance: B = 5% TA = 25°C unless otherwise noted Parameter Value Units 500 4.0 -65 to +200 mW mW/°C °C TSTG Power Dissipation Derate above 75°C Storage Temperature Range TJ Maximum Junction Operating Temperature + 200

Contextual Info: IRF830 Advanced Power MOSFET FEATURES B V DSS - 500 V ^DS on = 1 .5 0 . ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology LO ii Q ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: IRFS440A Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 6 .2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

sec irf840

Abstract: IRF840 MOSFET SEC IRF 640
Contextual Info: IRF840 Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

tle2202

Contextual Info: TLC2202, TLC2202A JL C 2 2 0 2 B , TLC2202Y Advanced LinCM O S LOW-NOISE PRECISION DUAL OPERATIONAL AMPLIFIERS D3497, MAY 1990 - REVISED AUGUST 1991 TLC2202B Is 100% Tested for Noise: 25 nV/VHz Max at f = 10 Hz 12 nV/VRz Max at f = 1 kHz Low Input Offset Voltage . . . 500 jiV Max

SEC IRF 640

Contextual Info: IRF840A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: IRFP450A A d van ced Power MOSFET FEATURES B V dss = 500 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .4 £ 2 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: IRF820A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 3 .0 Ì2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology LO c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

SS TRANSISTOR

Abstract: L497A
Contextual Info: TL497AM, TL497AI, TL497AC SWITCHING VOLTAGE REGULATORS D 2 2 2 5 . JU N E 1 9 7 6 - R E V IS E D O C T O B E R 19 8 8 • High Efficiency . . . 6 0 % or Greater • Output Current . . . 500 mA • Input Current Limit Protection • TTL Compatible Inhibit •

SMDB15

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# SMDA/B03 THRU SMDA/B24C DESCRIPTION 300 and 500 watt TVSarray  Series This 8 pin 4 line Unidirectional or Bidirectional array is designed for use in

fmp2fu

Abstract: FMP-3FU FMV3GU FMP-3FU DATASHEET FMQ-2FUR damper diodes 3gu diode
Contextual Info: VRM V Division IFSM (A) I F (AV) (A) Part Number 50Hz (Diode modulation Type) Tj (°C) Tstg (°C) Half-cycle Sinewave Single Shot 1500 600 FMV-3FU 5.0 FMV-3GU 5.0 FMP-2FUR 5.0 50 IR (µA) IR (H) (mA) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 October 1999. INCH-POUND MIL-PRF-19500/516D 23 July 1999 SUPERSEDING MIL-S-19500/516C 20 January 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE

Contextual Info: LD421850 TM POW-R-BLOK Dual SCR/Diode Isolated Module 500 Amperes / 1800 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual SCR/Diode Modules are designed for use in applications requiring phase control and isolated

Contextual Info: BZX85-C3V6 THRU BZX85-C62 ZENER DIODES FEATURES DO-41 G lass ♦ Silicon Planar Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high power rating. max. 0 0.102 2.6 ♦ The Zener voltages are graded according to the international E 24 standard. Replace suffix “C” with “B”

1N5225

Abstract: 1N5262 SL5225 SL5226 SL5227 SL5228 SL5229 SL5230 SL5262
Contextual Info: SL5225 THRU SL5262 SILICON PLANAR ZENER DIODES, 500 mW, MINIMELF PACKAGE Silicon Planar Zener Diodes Standard Zener voltage tolerance is +20%. Add suffix "A” for ±10% to le ra n ce and su ffix “B" for ± 5 % tole ran ce. O th er A dm issible po w e r dissipation

B180

Contextual Info: PL IA N T Features CO M • RoHS compliant* *R oH S ■ SMA package ■ Surface mount ■ Very low forward voltage drop CD214A-B120 ~B1100 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

semikron SKFT 150

Abstract: Semipack 1 skfh skfh semikron thyristor Semipack skfh semikron
Contextual Info: VDRM VRRM tq Tvj = 125 °C ITRMS (maximum values for continuous operation) 350 A V µs 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 DS 1) ITAV (sin. 180; Tcase = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3 Fast Thyristor/ Diode

SKM 75 GAL 123 IGBT

Abstract: semikron SKD 75 gal Semitrans M SKD 100 GAL B6U 380 Semitrans M SKD brake chopper b6u 500 semikron semikron skd 75 semikron skd skd75
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min. DIN 40 040

Contextual Info: S7E D • 345T325 bOb « F G R S DO-15 F- 126 58 A Plastic Dimensions in mm. e q03 oo Si Q1 m . ti_ - t Voltage 1.000 V. 8 Current 1.5 A. at 45°C. • Fast Recovery Diodes Mountir g instructions • Diffused junction 1. Min. c istance from b o d y to soldering p oint,

Contextual Info: LD41_60 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: OUTLINE DRAWING Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated

IRGB10B60KD

Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

R-56A

Contextual Info: Features • • • • • R56 & 57 Series Standard Industry Packaging 5 VDC Versions Operate Directly from DTL or TTL Circuits Internal Clamping Diode Versions D−suffix Flame Retardant Epoxy Case is Immersion Resistant Can be used with NTE409 Socket