B-500 DIODE Search Results

Contextual Info: BY 500-50.BY 500-1000 ,1 Axial lead diode Fast silicon rectifier diodes BY 500-50.BY 500-1000 8  9  2  9  9 * /*  2  9  9 *   9    9 1  => %$% => %$+ => %$ => %$" => %$ => %$@ #88 # % +  "

Contextual Info: BY 500-50.BY 500-1000 ,1 Axial lead diode Fast silicon rectifier diodes BY 500-50.BY 500-1000 8  9  2  9  9 * /*  2  9  9 *   9    9 1  => %$% => %$+ => %$ => %$" => %$ => %$@ #88 # % +  "

Contextual Info: A V A N T E « INC ^ ^ M T M4E D S Í C Si I l M l ^ b b OOOfllSS T fflAVA Voltage-Controlled AGC Am plifier 10 to 500 MHz " T ^ 'O FEATURES APPLICATIONS • ‘Frequency Range: 10 to 500 MHz • MODAMP Silicon Monolithic Gain Stages • AGC Range: 45 dB Typ

STPR850DF

Abstract: STPR860DF
Contextual Info: STPR850DF thru STPR860DF Ultra Fast Recovery Diodes Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode STPR850DF STPR860DF Symbol VRRM V 500 600 VRMS V 350 420 Dim. VDC V 500 600 Characteristics @TC=100 oC Inches

STPRF1650CT

Abstract: STPRF1660CT
Contextual Info: STPRF1650CT thru STPRF1660CT Ultra Fast Recovery Diodes A C A Dimensions TO-220AB A C A C TAB A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode VRRM V STPRF1650CT 500 STPRF1660CT 600 Symbol VRMS V 350 420 Dim. VDC V 500 600 Characteristics @TC=100 oC

Contextual Info: IL766 ILD766 SINGLE CHANNEL DUAL CHANNEL Bidirectional Input Darlington Optocoupler FEATURES • In te rn a l RBE fo r B e tte r S ta b ility • H igh C u rre n t T ra n sfe r R atios, F CE= 5 .0 V IL/IL D 7 66-1: 500% at / F=2.0 m A IL/ILD 766-2: 500% a t / F=1.0 m A

8NC50

Abstract: STB8NC50-1 STP8NC50 STP8NC50FP
Contextual Info: STP8NC50 - STP8NC50FP STB8NC50-1 N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)8NC50(-1) 500 V < 0.85 Ω 8A STP8NC50FP 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY

analog phase modulation

Abstract: PMP-3R Modul Modulators
Contextual Info: PMP-3R Series ANALOG PHASE MODULATOR 10 to 500 MHz / Up to 10% Modulation Rate / Low Insertion Loss / High Sensitivity / Meri-Pac TM PRINCIPAL SPECIFICATIONS Model Number PMP-3R-*B Center Frequency, fo, MHz 10 - 500 RF Bandwidth 10% of fo For complete Model Number replace * with desired Center Frequency, fo in MHz.

b055

Abstract: b0550 n4005
Contextual Info: B0520N thru B0560N Surface Mount Schottky Barrier Diodes REVERSE VOLTAGE 20-60 Volts FORWARD CURRENT 500 mAmpere P b Lead Pb -Free Features: *Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound.

B40C7000

Abstract: B80C7000 bc7000 4000a
Contextual Info: B.C7000-4000A B.C7000-4000A Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2006-07-28 ±0.2 16 32±0.2 16±0.2 17±0.2 5.6 Nominal current Nennstrom Alternating input voltage Eingangswechselspannung Type Typ ~ + 7.0 A / 4.0 A – ~ 40.500 V

LL4148

Abstract: LL4148 FAST MELF LL4448 small signal diodes case ja
Contextual Info: LL4148/LL4448 Surface Mount Switching Diodes P b Lead Pb -Free SMALL SIGNAL SWITCHING DIODES 150 m AMPERES 75 VOLTS Features: *Silicon Epitaxial Planner Diode *Fast Switching Diodes *500 mW Power Dissipation Mechanical Data: *Case : MINI-MELF Glass Case (SOD-80)

LL4148 FAST MELF

Abstract: LL4148 dynamic resistance LL4148 LL4448
Contextual Info: LL4148/LL4448 Surface Mount Switching Diodes P b Lead Pb -Free SMALL SIGNAL SWITCHING DIODES 150 m AMPERES 100 VOLTS Features: *Silicon Epitaxial Planner Diode *Fast Switching Diodes *500 mW Power Dissipation Mechanical Data: *Case : MINI-MELF Glass Case (SOD-80)

em 518 diode

Abstract: d507 M dp 502 t SW-45 ST333S TO-209AE
Contextual Info: Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-500 To Order Previous Datasheet Index Next Data Sheet Bulletin I25171/B ST333S SERIES Stud Version INVERTER GRADE THYRISTORS Features 330A All diffused design Center amplifying gate

BAS316

Contextual Info: BAS316 Surface Mount Switching Diode SWITCHING DIODE 500 mAMPERES 100 VOLTS P b Lead Pb -Free Features: * Very small plastic SMD package * High switching speed: max. 4 ns * Continuous reverse voltage: max. 100 V * Repetitive peak reverse voltage: max. 100 V

diode marking 355

Abstract: 1SS355
Contextual Info: 1SS355 Surface Mount Switching Diode P b Lead Pb -Free SWITCHING DIODE 100m AMPERES 100VOLTS SOD-323 1 WEITRON http://www.weitron.com.tw 1SS 355 Maximum Ratings Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 100 mAdc IFM(Surge) 500

Contextual Info: SIEMENS BUZ 45 BUZ 45 A, BUZ 45 B SIPMOS Power Transistors • • N channel Enhancement mode Type Vos To ^DS on Package ’> Ordering Code BUZ 45 500 V 9.6 A 25 ”C 0.6 £2 TO-204 AA C67078-A1008-A8 BUZ 45 A 500 V 8.3 A 25 'C 0.8 n TO-204 AA C67078-A1008-A9

4N50

Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB

Contextual Info: • MbflbEEb 0 0 ü l 7 0 b 7ST « I X Y n ix Y S MDD72 Diode Modules lTAV = 2 x 99 A i < < VRRM = 400-1800 V 500 700 900 1300 1500 1700 1900 Vrrm V Type Version 1 B 400 600 800 1200 1400 1600 1800* MDD72-04N1 MDD72-06N1 MDD72-08N1 MDD72-12N1 MDD72-14N1 MDD72-16N1

IRGKI200F06

Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Contextual Info: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U

sd diode sod-323

Abstract: B0520LWS B0540WS
Contextual Info: B0520LWS / B0540WS Surface Mount Schottky Barrier Diode P b Lead Pb -Free Features: SCHOTTKY DIODE 500 mAMPERS 20-40 VOLTS * Low Forward Voltage Drop * Guard Ring Construction forTransient Protection * High Conductance Mechanical Data: * Case: SOD-323 * Plastic Material –UL Recognition Flammability Classification 94V-O

74f13b

Contextual Info: ANALOG DEVICES □ FEATURES AC and DC Characterized and Specified {K, B, T Grades 128k Conversions per Second 1 MHz Full Power Bandwidth 500 kHz Full Linear Bandwidth 80 dB S /N + D K, B, T Grades) Twos Complement Data Format {Bipolar Mode) Straight Binary Data Format (Unipolar Mode)

Contextual Info: ANALOG DEVICES □ FEATURES AC and DC Characterized and Specified K, B, T Grades 128k Conversions per Second 1 MHz Full Power Bandwidth 500 kHz Full Linear Bandwidth 80 dB S/N+D (K, B, T Grades) Twos Complement Data Format (Bipolar Mode) Straight Binary Data Format (Unipolar Mode)

BAS516

Abstract: SC79
Contextual Info: BAS516 High Speed Switching Diodes SWITCHING DIODE 250 mAMPERES 75 VOLTS P b Lead Pb -Free Features: * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak forward current: max. 500 mA 1 2 Applications: * High-speed switching in e.g. surface mounted circuits.

Contextual Info: RECTRON GDZJ6.2 B&C SEMICONDUCTOR TECHNICAL SPECIFICATION ZENER DIODE Absolute Maximun Ratings Ta=25oC DO-34 Symbol Value Unit Power Dissipation at Tamb = 25 C P tot 500* mW Junction Temperature Tj 175 C Storage Temperature Ts - 65 to + 175 C Zener Current see Table "Chara."