B-500 DIODE Search Results

Contextual Info: BY 500-50.BY 500-1000 ,1 Axial lead diode Fast silicon rectifier diodes BY 500-50.BY 500-1000 8  9  2  9  9 * /*  2  9  9 *   9    9 1  => %$% => %$+ => %$ => %$" => %$ => %$@ #88 # % +  "

Contextual Info: BY 500-50.BY 500-1000 ,1 Axial lead diode Fast silicon rectifier diodes BY 500-50.BY 500-1000 8  9  2  9  9 * /*  2  9  9 *   9    9 1  => %$% => %$+ => %$ => %$" => %$ => %$@ #88 # % +  "

Contextual Info: A V A N T E « INC ^ ^ M T M4E D S Í C Si I l M l ^ b b OOOfllSS T fflAVA Voltage-Controlled AGC Am plifier 10 to 500 MHz " T ^ 'O FEATURES APPLICATIONS • ‘Frequency Range: 10 to 500 MHz • MODAMP Silicon Monolithic Gain Stages • AGC Range: 45 dB Typ

rph3

Abstract: LM 588 hydrogen diode gas-discharge voltage
Contextual Info: Ryazan Plant of Electronics P H 3 A H C K M M 3 A BOA 9J1ËKTP0HHMX 1PMBOPOB HMnynbCHUR ahoa IULS1D DIODI rKfl1-500/20 rt«r • . •H m rKül-500/20 - r a 3opaapHflHbift BHÖponpoHHbi# npu6op c o k c h a h u m kbtoaom KocBeHHoro HflKana h boaopoahmm Hano/weHHeM. npeaHasHaneH ana paÖOThi b xanecTB K/THnnepHoro, 3aiuHTHoro, 3apnflHoro hjih BeHTHjn>Horo anona b cneiinam> ho ft annapaType. 0 <J opMneHHe MeTajuioKepaMKHecxoe.

Contextual Info: SIEMENS BUZ 45 BUZ 45 A, BUZ 45 B SIPMOS Power Transistors • • N channel Enhancement mode Type Vos To ^DS on Package ’> Ordering Code BUZ 45 500 V 9.6 A 25 ”C 0.6 £2 TO-204 AA C67078-A1008-A8 BUZ 45 A 500 V 8.3 A 25 'C 0.8 n TO-204 AA C67078-A1008-A9

sd diode sod-323

Abstract: B0520LWS B0540WS
Contextual Info: B0520LWS / B0540WS Surface Mount Schottky Barrier Diode P b Lead Pb -Free Features: SCHOTTKY DIODE 500 mAMPERS 20-40 VOLTS * Low Forward Voltage Drop * Guard Ring Construction forTransient Protection * High Conductance Mechanical Data: * Case: SOD-323 * Plastic Material –UL Recognition Flammability Classification 94V-O

Contextual Info: ANALOG DEVICES □ FEATURES AC and DC Characterized and Specified K, B, T Grades 128k Conversions per Second 1 MHz Full Power Bandwidth 500 kHz Full Linear Bandwidth 80 dB S/N+D (K, B, T Grades) Twos Complement Data Format (Bipolar Mode) Straight Binary Data Format (Unipolar Mode)

BAS516

Abstract: SC79
Contextual Info: BAS516 High Speed Switching Diodes SWITCHING DIODE 250 mAMPERES 75 VOLTS P b Lead Pb -Free Features: * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak forward current: max. 500 mA 1 2 Applications: * High-speed switching in e.g. surface mounted circuits.

Contextual Info: 4bôfe>E2b D O O l b S ? 230 « I X Y n i x Y S MCC26 iTAV= 2 x 27 A MCD26 VRRM= 400-1600 V Thyristor Modules Thyristor/Diode Modules i 1 > > > 500 700 900 1300 1500 1700 Vrrm V.*», V 400 600 800 1200 1400 1600 Type Version 1 B MCC26-06ÌO1 MCC26-08ÌO1 MCC26-12io1

Contextual Info: ME RR IM AC I N D U S T R I E S INC 4bE D • b 0 0 4 b 3 ci O O O l ^ b M 2 ■■ MMIX 7 ~ -o 7 -& 7 Merrimac DMF-12A series DOUBLE BALANCED MIXERS High Level, Flatpack Models • + 2 8 dBm Third Order Input Intercept Point • 500 kHz to 2000 MHz Frequency Range

2N2652

Abstract: 2N2060 2N2652A
Contextual Info: motorcla xstrs/ r sc F 1EE 0 I b3 b? 254 QOâtiEfsb 2 | * 2N2652, A CASE 654-07, STYLE 1 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VcBO 100 Vdc Emitter-Base Voltage Ve b o 7.0 Vdc 'c 500 mAdc Rating Collector 1 7 Collector

Contextual Info: NCP1396A, NCP1396B High Performance Resonant Mode Controller featuring High-Voltage Drivers The NCP1396 A/B offers everything needed to build a reliable and rugged resonant mode power supply. Its unique architecture includes a 500ĂkHz Voltage Controlled Oscillator whose control mode brings

1N5200

Abstract: 1n5226b 1N5250B 20 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B
Contextual Info: Absolute Maximum Ratings* Symbol PD Tolerance: B = 5% TA = 25°C unless otherwise noted Parameter Value Units 500 4.0 -65 to +200 mW mW/°C °C TSTG Power Dissipation Derate above 75°C Storage Temperature Range TJ Maximum Junction Operating Temperature + 200

ncp1396

Abstract: NCP1396ADR2G NCP1396B JESD78 NCP1396A
Contextual Info: NCP1396A, NCP1396B High Performance Resonant Mode Controller featuring High- Voltage Drivers The NCP1396 A/B offers everything needed to build a reliable and rugged resonant mode power supply. Its unique architecture includes a 500 kHz Voltage Controlled Oscillator whose control mode brings

Contextual Info: 4bflb22b □OQlbb'l TS2 H I X Y DIXYS < < < ! I Thyristor Modules Thyristor/Diode Modules V mm Vo», V 500 700 900 1300 1500 1700 1900 400 600 000 1200 1400 1600 1600* MCC72 MCD72 iTAV= 2 x 85 A VRRM= 400-1800 v Type Version 1 B MCC72-064O1 MCC72-08ÌO1 MCC72-12Ì01

Contextual Info: • MbflbS2b GGGlbbS 307 M I X Y niXYS MCC56 ITav=2 x 60 A MCD56 VRRM=400-1800 v Thyristor Modules Thyristor/Diode Modules 500 700 900 1300 1500 1700 1900 i 1 > > > Vw V mm V 400 600 800 1200 1400 1600 1800* Type Version 1 B MCC56-06ÌO1 MCC56-08ÌO1 MCC56-12io1

Contextual Info: FEATURES • 10-500 MHz ■ 8 mA,+15VDC & ■ 0.6 dB Insertion Loss ■ CMOS Driver with BCD ■ ■ Non-Reflective Small 14 Pin DIP ■ Low Cost MODEL NO. DS0545 PIN Diode SP4T SP4T .79 — . .22 r PART ID E N T IF IC A T IO N .20 T LO G IC T A B LE CO NTROL

Contextual Info: 4bflb55b 00Glb73 Mfl3 H I X Y n ix Y S Thyristor Modules Thyristor/Diode Modules V mn V mm V Vmm Vow V 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1600 1800* MCC95 MCD95 iTAV= 2 x 116 A VRRM= 400-1800 v Type Version 1 B MCC95-06ÌO1 MCC95~08io1 MCC95-12I01

Contextual Info: Micnosemi H m m Santa Ana, CA m Progress Pow ered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • 500 Volts 8 Amps High voltage p-channel power mosfet with parallel fast switching, soft

Contextual Info: MCC TM Micro Commercial Components DL5221 THRU DL5276
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x • 500 mW Zener Diode 2.4 to 150 Volts Wide Voltage Range Available

Contextual Info: MCC 1N5268 THRU 1N5276
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • 500 mW Zener Diode 82 to 150 Volts Wide Voltage Range Available

Contextual Info: L 7 L I H ^ A B _ LTC1483 TECHNOLOGY Ultra-Low Power RS485 Low EMI Transceiver with Shutdown K flT U IK S D € S C R IP T IO n • Low Power: Ice = 120jjA Max with Driver Disabled ■ Ice = 500|iA Max with Driver Enabled, No Load

Contextual Info: TLC220x, TLC220xA, TLC220xB, TLC220xY Advanced LinCMOS LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS SLOS175 – FEBRUARY 1997 D D D D B Grade Is 100% Tested for Noise 30 nV/√Hz Max at f = 10 Hz 12 nV/√Hz Max at f = 1 kHz Low Input Offset Voltage . . . 500 µV Max

Contextual Info: IRF830 Advanced Power MOSFET FEATURES B V DSS - 500 V ^DS on = 1 .5 0 . ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology LO ii Q ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V