B-429 TRANSISTOR Search Results

inverter 1000watt

Abstract: lambda ultraflex 1000w inverter circuit diagram 1000watt dc to ac power inverter 12v dc 240v ac 1000W inverter ULTRAFLEX ULTRAFLEX 600W make inverter 1000watt 1000W inverter circuit design 600w power supply unit
Contextual Info: INSTALLATION MANUAL ULTRAFLEX POWER SUPPLY UF2500 Series 3055 Del Sol Blvd. San Diego, CA 92154 Phone: 619 575-4400 Fax: (619) 429-1011 P/N: IMUG2500 Rev. B DATE:February 2002 TABLE OF CONTENTS INTRODUCTION 4 CERTIFICATION 4 WARRANTY 4 APPLICABILITY 4 PART NUMBER CONFIGURATION

diode V6 96

Abstract: B-429 transistor
Contextual Info: U 429 B - F P - U 430 B - F P ITSyBPUKIKilNi e le c tro n ic Creative Technologies DR IV ER FOR IR TR AN S M I T T E R D I OD ES CUR RE NT SINK Technology: Bi po la r Features: o Constant current for IR signal 320 mA o Un de rvoltage control with in­ dicator dr iver

ZN429E-8

Abstract: LA 7051 ZN404 ZN429 ZN429D ZN429J-8 ZN458 12 bit r2r ladder current to voltage converter using 741 R2R Ladder Resistor Network
Contextual Info: ZN429E-8 ZN 429J-8 ZN429D Low cost 8-bit monolithic D-A converter FEATURES DESCRIPTION • The ZN 429 is a m onolithic 8 -b it D-A converter, • • • • • • • ZN429E-8 and ZN429D SO-14 Commercial tem perature range O to 7 0 °C ZN 429J-8 Military temperature range - 5 5 to + 125°C

BD429

Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor
Contextual Info: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in

Contextual Info: SIEMENS NPN Silicon Transistors SMBT 6428 SMBT 6429 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 6428 SMBT 6429

2SA429

Abstract: C780A u225 c011m 2SA429-O 2SA42 Produced by Perfect Crystal Device Technology nztl IR00
Contextual Info: /UD>PNP=*ffii0Bh5:/S>;*5> PCT7DÍC LICON PNP TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS), iiif INDUSTRIAL APPLICATIONS o •= • 9 -y « & a m o N ix ie Tube D r iv e r A p p lic a tio n s o H igh V o lta g e S w itc h in g Applications- ; : V C B0 =-150V

MRC 453

Contextual Info: am sm u t R F P r o je c ts M * ic r o s e m i 140CommerceDrive Montgomeryville, PA18936-1913 Tel: 215 631-9840 ^ , SD 1429 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C, MOBILE APPLICATIONS C U S S C TRANSISTOR FREQUENCY VOLTAGE POWER OUT POWER GAIN COMMON EMITTER

Contextual Info: Automation Controls Catalog Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat

Contextual Info: KSR2111 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R=22K f!) • Complement to KSR1111 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

MMCFA43

Contextual Info: MMŒA93 SILICON FLIP-CHIP PNP HIGH-VOLTAGE TRANSISTOR F lip -C tip — PNP silicon annular transistor designed fo r applications requiring high breakdown voltages w ith lo w saturation voltages. • C om plem ent to NPN T ype M M C FA43 MAXIMUM RATINGS Emitter-Base Voltage

8778401

Abstract: 8001601 HI-0201 8GHz transceiver specification MD-80 MD80C88/883 JM38510 HS 3182 HS 3282 MD82c82
Contextual Info: Military ICs 12 DIGITAL/MILITARY/SPACE PRODUCT TREES ANALOG Selection Guides Defense Selection Chart Analog Signal Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 Arrays, Transistor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

E43028

Abstract: NC2EBD-DC12V NC2D-JP-DC48V NC2-PS DC 3V relay 0.5A 220v ac DC 5V to DC 100V CIRCUIT DIAGRAM NC4D-JP-DC12V NC2EBD-DC24V NC2D-JP-DC12V NC2D-JP-DC24V
Contextual Info: NC Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BU2508AF Features • NPN Silicon Power Transistors With TO-3PFa Package TO-3PFa Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BU2508DF Features • With TO-3PFa package NPN Silicon Power Transistors Maximum Ratings Symbol VCEO VCBO VEBO ICP IC PC TJ TSTG Rating Collector-Emitter Voltage

B-429 transistor

Contextual Info: KSR2102 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SO T-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (Ri “ 1<M, R2=10kß) • Com plem ent to KSR1102 ABSOLUTE MAXIMUM RATINGS (TA=25t)

928 606 402 00

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BU508AF Features • • • High-voltage, high-speed switching NPN transistor With TOP-3Fa package Primarily for use in horizontal deflection circuits of color television

Contextual Info: NTE2642 Silicon NPN Transistor Horizontal Deflection Output High Speed Switch TO3P Full Pack Features: D High Breakdown Voltage D High Reliability D High Speed Switching D Wide Area of Safe Operation ASO Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Contextual Info: NTE2641 Silicon NPN Transistor Horizontal Deflection Output for High Resolution Displays & Color TVs TO3P Full Pack Features: D High Voltage: VCBO = 1500V D Low Saturation Voltage: VCE sat = 3V Max D High Speed: tf = 0.1 s Typ Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

marking LG sot-23

Abstract: SOT-23 MARKING mn
Contextual Info: Central" CMPTA14E Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR The Central Semiconductor CMPTA14E is an Enhanced version of the CMPTA14 NPN Darlington Transistor. This device is manufac­ tured by the epitaxial planar process, epoxy

Contextual Info: NTE2669 Silicon NPN Transistor Horizontal Deflection High Speed Switch TO3P Full Pack Description: The NTE2669 is a Horizontal Deflection Output for High Resolution Display−Color TV’s in High Speed Switching Applications. Features: D High Voltage D Low Saturation Voltage

IFR 630 MF

Abstract: 4-bit parity checker mark/space odd/even DAP7 50 led flasher circuit with pdf format f2f decoder ic 2203F xck-p 5.5v 1.0f body marking MCL CSTCR4M00G55A-R0
Contextual Info: ST92F124xx ST92F150Cxx ST92F150JDV1 ST92F250CV2 8/16-bit single voltage Flash MCU family with RAM, E³ emulated EEPROM , CAN 2.0B and J1850 BLPD • Memories – Internal Memory: Single Voltage Flash up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: diode MARKING f54 stl motor control 64 lead
Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)

PS502

Abstract: PS-502
Contextual Info: A C INTERFACE INC IDE D | 0023333 00QQ4?E fl | _ PS502 Ssm*i STANLEY PHOTO TRANSISTOR unit : mm+ 0.2 • Package Dimensions ■ FEATURES (1) Midget resin package of 3 .4 mm dia. permits use in lim ited space {2} High photocurrent (Typ. 15m A at Ee = 10m W /cm 2 )