B ZA 01 Search Results

7216 d

Abstract: BAVZ G3352 z725 z927
Contextual Info: LahXc KBB @X^Tj P\_Xc @EJ R8<kD8<_ Oa^\W1OeTeX0 LahXc KBB @X^Tj PEIAN .=/ ?af`eXc lBXTefcXd Mt-0~ 6~77-1+ 5z1+~ Vgtdqso f \Za>]\6~|X gtdqn f \Za>]\0-1W Ms-03/~ 7-0~ 6~783 z1} }-5~|7 5~z} 2* 7-0~ 5z1+~ Mq2:~5 6833/< f ]\\Y]^\ugh a\[b\l=X ^\\Y^`\ugh a\[b\l=

SL 0380 R

Abstract: b1464 cf03
Contextual Info: 8 1 1 1 DRAWING HADe IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. @ corm iaur 19 1 RELEASED FOR PUBLICATION B Y AMP IMCOnPOKATED. AIM IMTEMMATIOML # Î9 IOC • CF 39 RfOKTS flESEJMED. REVISIONS »1ST ± Jy. za« L IB DATE REL PER 89-4863-012 REV

Contextual Info: A F 28003 2513 - 0 0 0 8 NOTES : Interface dimensions per Mil-C-39012/SMQ Series And Solitron/Microwave MD-124. 1. MATING: 2. MATERIALS : iS/<ZA REF. BODY, COUPLING NUT, CAP & SLEEVE „.Brass per QQ-B-626, h H. Alloy 360.“ CONTACT & SPRING.Beryllium Copper per QQ-C-530,

S664A-DECEM

Abstract: TM248GBK32 TM124FBK32S TM248GBK32S TM124FBK32
Contextual Info: TM124FBK32, TM124FBK32S 1 048576 BY 32-BIT TM248GBK32, TM248GBK32S 2097152 BY 32-BIT DYNAMIC RAM MODULES SMMS664A- DECEMBER 1995 - REVISED JUNE 1996 Presence Detect Or ga n i za t i o n T M 1 2 4 F B K 3 2 . . . 1 0 4 8 576 x 32 T M 2 4 8 G B K 3 2 . . . 2 097 1 52 x 32

anzac frequency

Abstract: anzac AT-200
Contextual Info: M / A - C Ô M INC/ AN ZA C DIV 14E D MMICABSORPTIVEVVA' MODEEAT-20Qg « i f f i B S L 4 2 1 7 7 GG032Et> fl î f '7 * - '7y ~/3 Low Insertion Loss, 1.2 dB Typical -o Fast Switching Speed, 4 ns Typical Ultra Low DC Power Consumption Outstanding Flatness Guaranteed Specifications*

Contextual Info: T M S 2 8 F 4 0 0 B ZT, T M S 2 8 F 4 0 0 B Z B 41 9 4 3 0 4 - B I T B O O T - B L O C K F L A S H M E M O R Y SM JS 400C -JU N E 1 9 9 4 - REVISED DECEMBER 1995 D B JPACK AG E TOP VIEW Or ga n i za t i o n - Two 8 K- By t e P a r a m e t e r B l o c k s

418160d

Contextual Info: TM124MBJ36F, TM124MBJ36U 1 048576 BY 36-BIT DYNAMIC RAM MODULE TM248NBJ36F, TM248NBJ36U 2097152 BY 36-BIT DYNAMIC RAM MODULE S M M S 662-M A Y 1996 • Or ga n i za t i o n T M 1 2 4 M B J 3 6 F . . . 1 0 4 8 576 x 36 T M 2 4 8 N B J36F . . . 2 09 7 1 52 x 36

Contextual Info: T M S 2 8 F 2 0 0 B ZT, T M S 2 8 F 2 0 0 B Z B 20971 52-BI T B O O T - B L O C K F L A S H M E M O R I E S S M J S 2 0 0 C -JUNE 1 9 9 4 - REVISED DECEMBER 1995 DBJPACKAGE Or ga n i za t i o n - Two 8 K- By t e P a r a m e t e r B l o c k s - O n e 9 6 K - B y t e Main Bl o c k

74266

Abstract: 74136 7486 BC 545 ls 7486 t2230
Contextual Info: - 74136 107- Quad 2 Input O. C. Ex-OR 4A 4V m U Tt » 2Y 01 J¥lJFlJ¥LJiriJTUTUTL 1A IB IV ZA Y = A B = ÄB + AB 0 7 4 8 6 « H - - T V n L- ? 9 ï i £ 3 US tpd tpd tpd tpd £ > Icc 11H III IOH IOL - 3 0 — E3 3 * / h K~n max LA^H nax L/H—L •ax H/H—L

t1a250v

Abstract: T 1A 250V T85 25E3 1A-125 25E3 BZ-2RS72-A2 25E3 T85
Contextual Info: ~x — H MICRO SWITCH ~ BZ-2RS72-A2 SWITCH - BASIC F R E E P O R T . IL L IN O IS. U .S .* . A DIVISION O F H O N eYW ELL C T Æ 5 A I i Ato B AMF6500 T O . M r« . COOS OJ < I CVJ h - CO— < \l° CD < CL za I! CM K O M i R E V IS IO N S LO O |_|0 015929Í

Contextual Info: S E M IC O N D U C T O R tm 100363 Low Power Dual 8-Input Multiplexer General Description • 2000V ESD protection The 100363 is a dual 8-input m ultiplexer. The Data S elect S n inputs determ ine w hich bit (A n and Bn) will be presented a t the outputs (Za and Z b respectively). The sam e bit (0 -7 )

YCL nad 16 c

Abstract: TMS626812
Contextual Info: TMS626812 1 048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY S M O S 687-JU LY 1996 Or ga n i za t i o n . . . 1 M x 8 x 2 B a n k s DGEPACKAGE TO P VIEW 3.3- V P o w e r S u p p l y ( ± 1 0 % T ol er ance) Two B a n k s for O n - C h i p I nt er l eavi ng

Contextual Info: ARK-LES D EPT I I 2 3 I 4 5 6 7 l e 9 I0 II I2 M E . I CORPORATION CUSTOM ER WATERTOWN,MASS. b PART NAM E: PART NO TELFMVU N\AV_ - fb F A D E PART NO, ZA' PAi ZAO 2A1~Q 2 A 2 -0 2A 1-2. 2 A 2 -2 + Z A I-I 2A2.17.5" ,o< Z LAl~4 ZAZ.-4 'D ' < • D R A W IN G

Contextual Info: 4 PART N O. I CA-XXHLR-XX-XXX D 15 O M I T T E D O N C A - I O H L & CA-I4HL C B 7. MEETS THE RE QU IR EM EN TS OF DIRECTIVE 20 02/95/EC OF THE EUROPEAN PA RLIAMENT AND OF THE COUNCIL OF 27 JANUARY 2003 ON THE RESTRICTION OF THE USE OF CERTAIN HA ZA RD OU S SU BSTANCES IN EL ECTRICAL AND

Contextual Info: 't b _ f r a m e _ A 3 _ P _ A M _ T Rev. D 2 0 0 4 /0 6 /2 8 > D n q za x i m m m XI o > ia H q n z H c 70 □ i/ i m ? ui "2 o G o Jm oui ° 5 y n o o 3> > “ 30 G ! £ | § -n 2 r o > a □ Z X] o z < r i zo 2 z c/i 1 M m y aj ID u i ^ J -i -n Ï p u)

HC- 543

Abstract: C02CB C824 34c08 AB p84 C748 BD 882
Contextual Info: 75.-5 ?A1:8;80@A>4 8;@4>:4380@4 =<C4> >490D 5HERSPHQ r8;4 y>^jqaccdha Q em BF8C278=6 20?018;8CH Q *,]c abe,mo 0?A>E43 1H +w BC0=30A3 B 3 4 Q b r>A< m B;8< 2>=586DA0C8>= Q -0B7 C867C 0=3 5;DG ?A>>543 CH?4B 0E08;01;4 r8;4 y>^jd``abb`c Q q=E8A>=<4=C0; 5A84=3;H ?A>3D2C Z}>t~ 2><?;80=C[

jk21

Abstract: B H08 9m29 N2828
Contextual Info:  0 0  0 0123456789 9 66 6 *+18,*-8* +646.*48-.88 !"#$%&%' ( W"‚$%&%'()( ss%ƒ%#X%ƒ%VW@@ !ZX%ƒ%s#%ƒ%V‚@@ W!X%ƒ%!XZ%ƒ%vW@@ S2=8I /01234 5627689%:81%8 ;(<(=8>6?2%=()@2=?A BC%D%5%D%EF BUV%D%VW%D%#X@@F 5D01602%6(H=IM2682

ZA12

Abstract: 2N3906U marking za
Contextual Info: SEMICONDUCTOR 2N3906U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZA 1 2 Item Marking Description Device Mark ZA 2N3906U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: ÿÿÿ  1234516789 6  !"#$%"&ÿ *&!+% ,-. %##) # /01ÿ345678695:ÿ195;7<ÿ=96>ÿ?@64ABC5= DAEA896A:87 LESD8L5.0CT5G S-LESD8L5.0CT5G

ZA SOT23

Abstract: 2N3906S 2N3906S SOT-23 ZA12 ZA EA Marking marking J1 sot-23
Contextual Info: SEMICONDUCTOR 2N3906S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZA 1 2 Item Marking Description Device Mark ZA 2N3906S hFE Grade - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

2N2904U

Contextual Info: SEMICONDUCTOR 2N2904U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking ZA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ZA 2N2904U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

2N2906E

Contextual Info: SEMICONDUCTOR 2N2906E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking ZA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ZA 2N2906E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

2x062

Abstract: Faston 6.3x0,8 ZD 22 faidb2150zc 2x4700 F.AM.DI.3600.ZE 2X40 3600ZL 047 D 45 3600Z
Contextual Info: Chassis Mount Filters F.AI-F.AM-F.AK-F.AR-F.AS series Single phase - general purpose Comprehensive family of single and multi-stage chassis mount filters. Throughout the power range, a high level of performance is provided within various sizes and styles of metal enclosure and termination

netronix

Abstract: MicroDem-001 dla 001 UM-005 micro-dem Q5M-005 uM005 antena 470r nim ttl
Contextual Info: NETRONIX Dokumentacja Techniczna MicroDem-001 MicroDem001-DTRdoc-01.02 PDF created with FinePrint pdfFactory trial version http://www.pdffactory.com NETRONIX MicroDem -001 Wprowadzenie MicroDem-001 jest modułem demonstracyjnym dla czytników serii „micro” posiadających