B 595 TRANSISTOR Search Results

B 595 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
54F151/BEA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA)	PDF
54F573FM/B	Rochester Electronics LLC	54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL,	PDF

B 595 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 8 -3 2 U N C-2A DIM MILLIMETER A 5.71 H 1 1.52 26.16 J K L .38R 19.05 o 9.52 DIA 0.13 1.78 4.06 15.11 2.92 LD B C D E F G TOL INCHES .13 .13 .02 .13 .13 MAX .38 .225 .375 DIA .005 .070 .165 .595 .115 .005 .005 .001 .005 .005 MAX .015 .13 .38 5' .060 1.030	OCR Scan	55GT8R	PDF
sot23 1303 Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335 Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers	Original	MA4T3243 OT-23 MA4T324335 sot23 1303 IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335	PDF
TRANSISTOR K 1507 Contextual Info: Preliminary Specifications 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2.00 SOT-23 Features ● ● ● ● ● 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel Description The MA4T6310 series of low current, high fT silicon NPN	Original	MA4T6310 OT-23 MA4T631039 OT-143 MA4T631039 TRANSISTOR K 1507	PDF
MA4T636533 Abstract: transistor sot-23 2613 MA4T6365 Contextual Info: Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features ● ● ● ● ● ● Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and	Original	MA4T6365 MA4T6365 OT-143 MA4T636539 MA4T636533 transistor sot-23 2613	PDF
b 595 transistor Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335 Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor	Original	MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335	PDF
TRANSISTOR 3FT 81 Abstract: T20 64 diode transistor 81 110 w 63 transistor 9163 Contextual Info: an A M P com pany Wireless Bipolar Power Transistor, 2W 1.6-1 .7 GHz PH1617-2 Features • • • • • • Designed for Linear Amplifier Applications Class AB: -33 dBc 'I’yp 3rd 1MD at 2 Watts PKP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration	OCR Scan	PH1617-2 TRANSISTOR 3FT 81 T20 64 diode transistor 81 110 w 63 transistor 9163	PDF
PH0810-35 Abstract: Transistor c54 F1 J37 transistor 431 N cl 740 Contextual Info: = an AMP - company Wireless Bipolar Power Transistor, 850 - 960 MHz 35W PH081 o-35 Features Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration	Original	PH081 53dBm PH0810-35 lN4245 PH0810-35 Transistor c54 F1 J37 transistor 431 N cl 740	PDF
balun transformer 75 ohm Abstract: 300 ohms balun b 595 transistor CRC10 UF281OOH Contextual Info: RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz UF281 OOH Features N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Input Capacitance c IS	Original	UF281 3050152-W balun transformer 75 ohm 300 ohms balun b 595 transistor CRC10 UF281OOH	PDF
1445s Abstract: transistor D 1761 PH1617 Contextual Info: ^fccO'H m an A M P com pany Wireless Bipolar Power Transistor, 10W 1.6- 1.7 GHz _ .744 _ 18.90 Features • • • • • • PH1617-10 Designed for Linear Amplifier Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PKP Class A. +49 dBm Typ 3rd Order Intercept Point	OCR Scan	PH1617-10 1445s transistor D 1761 PH1617	PDF
UF28100M Abstract: UF281OOM Amp. mosfet 500 watt ISS135 S80E Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, lOOW, 28V UF281 OOM Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C	Original	UF281 73XD1B2-03 UF28100M UF281OOM Amp. mosfet 500 watt ISS135 S80E	PDF
balun transformer 75 ohm Abstract: 300 ohms balun Contextual Info: Ajfomm m an A M P com pany RF MOSFET Power Transistor, 100W, 28V 100-500 MHz UF28100H V2.00 Features • • • • • N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for B roadband O peration High Saturated O utput Power Lower Noise Figure Than Competitive Devices	OCR Scan	UF28100H UF201OOH 0311THICK balun transformer 75 ohm 300 ohms balun	PDF
pulse transformer bv 070 Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer Contextual Info: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation	Original	UF281 uF261oov 7305OlB2-03 pulse transformer bv 070 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer	PDF
L0025 Abstract: LF2802A f10 transistor Contextual Info: A títcor. W an AMP company RF MOSFETPower Transistor, 2W, 28V 500-1000 MHz LF2802A V2.00 Features • • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor	OCR Scan	LF2802A L0025 LF2802A f10 transistor	PDF
Contextual Info: Aflkm*A w an A M P com pany RF MOSFET Power Transistor, 5W, 28V 100 - 500 MHz UF2805B V2.00 Features • N-Channel Enh ancem en t Mode Device • DMOS Structure • Lower Capacitances for Broadband O peration • C om m on Source Configuration • Lower Noise Floor	OCR Scan	UF2805B 680pf B20pf UF2805B	PDF

SEMCO Abstract: DU1230S SEMCO CL Contextual Info: = - =- an AMP company = = RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz DUI 230s Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices	Original	-55to DU123OS SEMCO DU1230S SEMCO CL	PDF
transistor sb 772 Abstract: TRANSISTOR b 772 p C1413 d 772 transistor Contextual Info: y M AfMeP e o ii m an co m p a n y RF MOSFET Power Transistor, 1W, 28V 100-500 MHz UF2801KI V2.00 Features • • • • • • N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for Broadband O peration Lower Noise Floor 100 MHz to 500 MHz O peration	OCR Scan	UF2801KI transistor sb 772 TRANSISTOR b 772 p C1413 d 772 transistor	PDF
transistor 936 Abstract: 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100 Contextual Info: A tÓ K m m an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N-Channel Enhancement Mode Device HF to VHF Applications 40 Watts CW Common Source Push-Pull Configuration DMOS Structure Aluminum Metallization	OCR Scan	DU2840V 5b422D5 C7C9C12C14 C10C13C15 5b4BE05 transistor 936 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100	PDF
Contextual Info: M &CÔM m an A M P com pany RF MOSFET Power Transistor, 20W, 28V 2 - 1 7 5 MHz DU2820S Features • • • • • N-Channel Enh ancem en t Mode Device DMOS Structure I.ower C apacitances for Broadband O peration High Saturated O utput Pow er I.ower Noise Figure Than Bipolar Devices	OCR Scan	DU2820S 5-80pF 3-30pF DU2S20S	PDF
transistor c 2499 Abstract: transistor tj 2499 12OW capacitor 4 f XF 020 transistor D 2499 DU28120T 22 pf trimmer capacitor 81 210 W transistor 2499 Contextual Info: E XF .- an AMP company r = RF MOSFET Power Transistor, 2 - 175 MHz 12OW, 28V DU28120T Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices	Original	DU28120T S-16OpF DU26120T transistor c 2499 transistor tj 2499 12OW capacitor 4 f XF 020 transistor D 2499 DU28120T 22 pf trimmer capacitor 81 210 W transistor 2499	PDF
C0033 Abstract: 2052-5636-02 ATC100A PH2323-14 6010.5 T50M50 VCC28 Contextual Info: ArfKO‘A W an A M P company CW Power Transistor, 14W 2.3 GHz PH2323-14 V2.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Gold Metalization System Hermetic Metal/Ceramic Package	OCR Scan	PH2323-14 -T50M50A ATC100A C0033 2052-5636-02 PH2323-14 6010.5 T50M50 VCC28	PDF
transistor J17 Abstract: transistor j8 2052-5636-02 wacom Z005 Contextual Info: an AMP company Radar Pulsed Power Transistor, 25W, loops Pulse, 10% Duty PH2729-25M 2.7 - 2.9 GHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PH2729-25M 38-j14 35-j16 33-j17 PH2729-25M transistor J17 transistor j8 2052-5636-02 wacom Z005	PDF
DU1230S Abstract: arco TRIMMER capacitor SEMCO Contextual Info: A te m m a n A M P com pany RF MOSFET Power Transistor, 30W, 12V 2 -175 MHz DU1230S V2.00 Features • • • • • • N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for Broadband O peration High Saturated O utput Power Lower Noise Figure Than Bipolar Devices	OCR Scan	DU1230S 5-80pF 4-40pF 1000pF DU1230S arco TRIMMER capacitor SEMCO	PDF
NPN TRANSISTOR Z4 Abstract: b 595 transistor transistor z4 n transistor ZY PH3134-65M 572i transistor b 595 Contextual Info: ,-=r=-= -= ZY f .- = r = anAMPcompany * Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 16.51 - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation	Original	PH3134-65M 225t010 iEV-15 NPN TRANSISTOR Z4 b 595 transistor transistor z4 n transistor ZY PH3134-65M 572i transistor b 595	PDF
b 595 transistor Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE Contextual Info: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PH31355M 15-j3 b 595 transistor Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE	PDF

B 595 TRANSISTOR Search Results

B 595 TRANSISTOR Result Highlights (5)

B 595 TRANSISTOR Datasheets Context Search

sot23 1303

TRANSISTOR K 1507

MA4T636533

b 595 transistor

TRANSISTOR 3FT 81

PH0810-35

balun transformer 75 ohm

1445s

UF28100M

balun transformer 75 ohm

pulse transformer bv 070

L0025

SEMCO

transistor sb 772

transistor 936

transistor c 2499

C0033

transistor J17

DU1230S

NPN TRANSISTOR Z4

b 595 transistor