B 595 TRANSISTOR Search Results

TRANSISTOR S1d

Abstract: SCT-595
Contextual Info: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking SMBTA 42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595

NPN S2D

Abstract: SCT-595 SCT59
Contextual Info: SMBTA 92M PNP Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 42M NPN 3 2 1 VPW05980 Type Marking SMBTA 92M s2D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595

SCT-595

Abstract: VPW05980
Contextual Info: SMBTA 06M NPN Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 56M PNP 3 2 1 VPW05980 Type Marking SMBTA 06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595 Maximum Ratings

VPW05980

Contextual Info: SMBTA 56M PNP Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 06M NPN 3 2 1 VPW05980 Type Marking SMBTA 56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT-595 Maximum Ratings

Contextual Info: 8 -3 2 U N C-2A DIM MILLIMETER A 5.71 H 1 1.52 26.16 J K L .38R 19.05 o 9.52 DIA 0.13 1.78 4.06 15.11 2.92 LD B C D E F G TOL INCHES .13 .13 .02 .13 .13 MAX .38 .225 .375 DIA .005 .070 .165 .595 .115 .005 .005 .001 .005 .005 MAX .015 .13 .38 5' .060 1.030

2N6665

Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
Contextual Info: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed

21E sot

Abstract: IC 3263 1303 SOT23
Contextual Info: M an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • D esigned for 3-5 Volt O peration • U seable to 6 GHz in Oscillators • U seable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz

MA42181-510

Abstract: 2N5054 2N6665-509
Contextual Info: M a n A M P icom pany General Purpose Low Noise Bipolar Transistors V3.00 Case Styles Features • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed

sot23 1303

Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers

TRANSISTOR K 1507

Contextual Info: Preliminary Specifications 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2.00 SOT-23 Features ● ● ● ● ● 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel Description The MA4T6310 series of low current, high fT silicon NPN

nf016

Abstract: MA4TF50 gs 069 0605
Contextual Info: an A M P com pany General Purpose 0.5 |jm N-Type GaAs MESFET Transistors MA4TF50 Series V3.00 Case Styles Features • • • • • Low Noise Figure High Associated Gain High Maximum Available Gain Designed for Battery Operation Useful to Ku-Band Description

MA4T636500

Abstract: MA4T6365
Contextual Info: M an A M P com pany Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • D esigned for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and

Contextual Info: VMÂCQM Preliminary Specifications m an AM P company 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V1.A SOT-23 Features • • • • • 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel

MA4T636533

Abstract: transistor sot-23 2613 MA4T6365
Contextual Info: Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features ● ● ● ● ● ● Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and

MA4TF50

Abstract: MA4TF5005 RS 434 071 x-band transistor transistor mesfet
Contextual Info: General Purpose 0.5 µm N-Type GaAs MESFET Transistors MA4TF50 Series V3.00 Case Styles Features ● ● ● ● ● Low Noise Figure High Associated Gain High Maximum Available Gain Designed for Battery Operation Useful to Ku-Band Description The MA4TF50 is an n-type GaAs depletion mode Metal

MA4T64500

Contextual Info: M an A M P com pany Silicon Bipolar High fT Low Noise Microwave Transistors MA4T645 V3.00 Case Styles Features • • • • • • fT to 9 GHz Low Noise Figure High A ssociated Gain Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels

b 595 transistor

Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor

t636

Abstract: 557 sot143 T636 A S 223 858 015 636
Contextual Info: an A M P com pany Low Operating Voltage, High FT Bipoiar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and

TRANSISTOR K 1507

Contextual Info: Preliminary Specifications an A M P company 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2 .00 Features • • • • • SOT-23 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel

QE R 643

Contextual Info: M an A M P com pany Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MA4T243 Series V3.00 Case Styles Features • • • • • Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip

TRANSISTOR 3FT 81

Abstract: T20 64 diode transistor 81 110 w 63 transistor 9163
Contextual Info: an A M P com pany Wireless Bipolar Power Transistor, 2W 1.6-1 .7 GHz PH1617-2 Features • • • • • • Designed for Linear Amplifier Applications Class AB: -33 dBc 'I’yp 3rd 1MD at 2 Watts PKP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration

Contextual Info: MA4T243 Series M/A-COM Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip Available in Hermetic Surface Mount Packages

nd 16 TRANSISTOR SOT-23

Abstract: TRANSISTOR b 772 p sot-23 rks MA4T645 transistor TE 901 equivalent SOT-143 717 mount chip transistor 332 RKS SOT23 MA4T64500 MA4T64539
Contextual Info: MA4T645 Series M/A-COM Silicon Bipolar High fT Low Noise Microwave Transistors M crow ave Products Case Style Features • • • • • • • A MI RÂF & C G M fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available

IU 1047

Abstract: transistor 1005 oj
Contextual Info: V M fcC Q M m an A M P com pany Wireless Bipolar Power Transistor, 2W 1 .7 8 -1 .9 0 GHz PH1819-2 744 _ Features • • • • • • bL.D ;i4 Designed for Cellular Base Station Applications Class AB: -34 dBc Typ 3rd 1MD at 2 Watts PKP Class A: +43 dBm Typ 3rd Order Intercept Point