B 514 TRANSISTOR Search Results

s53 photo

Abstract: TCD5250D Tcd5250
Contextual Info: TCD5250D GENERAL TCD5250D is an interline CCD area image sensor developed for a CCIR system B / W television camera. This device has signal pixels o f 514 horizontal x 579 (vertical), and its image size agrees w ith 1/3 inch type optical system. This device offers high sensitivity and low smearing and

TCD5240D

Abstract: tc6133 TC6132AF Tcd5240
Contextual Info: TCD5240D GENERAL TCD5240D is an interline CCD area image sensor developed for a EIA system B / W television camera. This device has signal pixels of 514 horizontal x 4 9 0 (vertical), and its image size agrees with 1/3 inch type optical system. This device offers high sensitivity and low smearing and

equivalent transistor K 3531

Abstract: k 3531 transistor transistor K 3531 b 514 transistor TA7686 406MHZ rca 632 class c tuned amplifier rca rf overlay transistor 40893
Contextual Info: File No. 514 RF Power Transistors Solid State Division 40893 15-W, 4 7 0 -MHz Emitter-Ballasted Overlay Transistor Silicon N-P-N T y p e fo r Class C A m p lifie rs in 1 2 . 5 - V M o b ile C om m unications E q uip m en t Features: • 5.2-dB gain {min. at 4 7 0 MHz, Po

NTC 103 3950

Abstract: CMFB40Z473 NTC 3950 3400 transistor CMFA39F104 NTC CMFA39F103 CMFB39H103 CMFA39H103 Microtherm ic 4050
Contextual Info: CMF Chip NTC Thermistors Application • Temperature compensation of IC, LCD • Transistor • Crystal oscillator of mobile communications equipments • Temperature sensor for rechargeable batteries • Temperature sensor for CPU • Temperature compensation of several kinds of circuits

Contextual Info: Series AMLDP-Z Up to 1000mA | LED Driver FEATURES: •        Step Down DC/DC LED driver Constant current output Non-Isolated High efficiency up to 93% Operating Temperature range -40ºC to +85ºC PWM/Digital and Analog Voltage dimming

KDZTR27B

Abstract: CISPR22 TL431 757LED
Contextual Info: Series AMLD-Z Up to 1000mA | LED Driver FEATURES: • • • • • • • • Step Down DC/DC LED driver Constant current output Ultra Wide 8:1 input voltage range High efficiency up to 97% Operating Temperature range -40ºC to +85ºC Open and Short LED Protection

Contextual Info: Click on Series name for product info on aimtec.com Series AMLBW-Z Up to 700mA | Step Up LED Driver FEATURES: • Step UP DC/DC LED driver • Constant current output • High efficiency up to 94% • Soft Start Models Single output Model Input Voltage V

Contextual Info: Philips Semiconductors H b b S B ^ B l O D B lIb fl 0Tb H A P X ^O bjectivespecification NPN 7 GHz wideband transistor BFG741 N APIER P H IL IP S /D IS C R E T E FEATURES b'lE D PINNING DESCRIPTION PIN • Low distortion • Gold metallization ensures excellent reliability

R9D TRANSISTOR

Contextual Info: Click on Series name for product info on aimtec.com Series AMLDLW-Z Up to 1000mA | LED Driver FEATURES: • • • • • Models Single output Wire Connections Constant current output Wide 4:1 input voltage range High efficiency up to 95% Step Down DC/DC LED driver

Contextual Info: BF660 _ / V SILICON PLANAR TRANSISTOR P-N-P transistor, in a microminiature plastic envelope; intended fo r use as oscillator in v.h.f. tuners w ith extended frequency range and/or in conjunction with MOS-FETs in thick and thin-film circuits,

62702-F

Contextual Info: 3EE D • Ô23b 320 GGlfc^B? S « S I P 3 1 - 2,3 NPN Silicon RF Transistor SIEMENS/ SPCL-, SEMICONDS _ ^7P ' • For low-distortion broadband amplifiers up to 900 MHz at collector currents from 20 to 150 mA. Type Marking Ordering c o d e ^ tape and reel ^

Contextual Info: 2SC3910 Power Transistors 2SC3910 Silicon NPN Triple-Diffused Junction Mesa Type Package D im ensions High Speed Sw itching 20.5max. • Features • • • • High speed sw itching High collector-base voltage VCbo W ide area of safety operation (ASO)

Contextual Info: bbS3T31 0033530 b88 Philips Semiconductors APX Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 N AnER PHILIPS/DISCRETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL MAX. UNIT drain-source voltage

single phase SPWM IC

Abstract: thx 203h BRM2.0 BRM02 059MHz SPWM IC 80C52 QFP-44 VRS1000 VRS1000-40
Contextual Info: VRS1000 VERSA Datasheet Rev 0.5 VERSA 1000: 8-Bit, 40 MHz, 1K RAM and 64K Embedded ISP FLASH, MCU Datasheet Rev 0.5 1134 Ste Catherine Street West, Suite 900, Montreal, Quebec, Canada H3B 1H4 n Tel: 514 871-2447 n http://www.goalsemi.com 1 VRS1000 VERSA

Contextual Info: AVANTEK INC M4È D ^A V A N T E K n . m i t t O Q O T ^ a i IA VA 3 UTO /UJC 514 Series Thin-Fiim Cascadable Am plifier 30 to 200 MHz • FEATURES APPLICATIONS • • • • • IF/RF Amplification • Low Power System Frequency Range: 30 to 200 MHz Low Noise Figure: 1,9 dB Typ

BF440

Abstract: BF441 IC 41 BF a1265 ir 441 c JEDECTO-92 Fm amplifier
Contextual Info: BF 440 • BF 441 Siliziium-PNP-Epitaxial-Planar-HF-Transistoren Silicon PNP Epitaxial Planar RF Transistors Anwendungen: BF 440: G eregelte AM- und FM -Verstärkerstufen BF 441: AM- und FM-Verstärkerstufen Applications: BF 440: C ontrolled AM and FM am p lifier stages

2N6114

Abstract: 2N6115 2n6218 unijunction SCR firing unijunction N6115 b 514 transistor
Contextual Info: Complementary Unijunction Transistor 2N6114 2N6115 2N6218-24 S E E GES6218-24 COMPLEMENTARY UNIJUNCTION The General Electric Complementary Unijunction T ran sistor is a silicon planar, monolithic integrated circuit. It has unijunction characteristics with

Contextual Info: Series AM15E-IZ 15 Watt | DC-DC Converter FEATURES: •         RoHS compliant 2:1 input range Low ripple and noise Remote On/Off control Synchronous rectifier Power modules for PCB mounting Regulated output Operating temperature range: -40 to +85ºC

Contextual Info: SGS-THOMSON * 71. nn g^@l[LggirMnigi_SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • ■ ■ . ■ 30 MHz 28 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION . P o u t = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar

BUZ356

Contextual Info: N AMER PHIL I P S / D I S CR E T E ObE D PowerMOS transistor • bbS3T31 0014822^2 BUZ356 r=-si-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: TRANSISTOR ARRAY FEATURES_ UPA103G CONNECTION DIAGRAM • FIVE MONOLITHIC 9 GHz fr TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers Top View UPA103G 14 13 12 11 10 9 8 • OUTSTANDING hFE LINEARITY

2SC3910

Contextual Info: Power Transistors 2SC3910 2SC3910 Silicon N PN Triple-D iffused Junction M esa Type Package D im ensions High Speed S w itching • Features U n it ! mm 5.3max. 20.5m ax. 3.0- • H ig h s p e e d s w itc h in g • H ig h c o lle c to r - b a s e v o lta g e V CBo

em 518 diode

Contextual Info: MITSUBISHI TRANSISTOR MODULES | QM50CY-H | MEDIUM POWER SWITCHING USE \ INSULATED TYPE ? QM50CY-H • lc Collector c u rre n t. • Vcex C ollector-em itter v o lta g e . DC current g a in . • hFE 50A ! 600V I 75 I

Contextual Info: _ J v _ BDT61;61A BDT61B;61C SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. P-N-P complements are BDT60, 60A, 60B and 60C.