B 500 DIODE Search Results

rph3

Abstract: LM 588 hydrogen diode gas-discharge voltage
Contextual Info: Ryazan Plant of Electronics P H 3 A H C K M M 3 A BOA 9J1ËKTP0HHMX 1PMBOPOB HMnynbCHUR ahoa IULS1D DIODI rKfl1-500/20 rt«r • . •H m rKül-500/20 - r a 3opaapHflHbift BHÖponpoHHbi# npu6op c o k c h a h u m kbtoaom KocBeHHoro HflKana h boaopoahmm Hano/weHHeM. npeaHasHaneH ana paÖOThi b xanecTB K/THnnepHoro, 3aiuHTHoro, 3apnflHoro hjih BeHTHjn>Horo anona b cneiinam> ho ft annapaType. 0 <J opMneHHe MeTajuioKepaMKHecxoe.

Contextual Info: SIEMENS BUZ 45 BUZ 45 A, BUZ 45 B SIPMOS Power Transistors • • N channel Enhancement mode Type Vos To ^DS on Package ’> Ordering Code BUZ 45 500 V 9.6 A 25 ”C 0.6 £2 TO-204 AA C67078-A1008-A8 BUZ 45 A 500 V 8.3 A 25 'C 0.8 n TO-204 AA C67078-A1008-A9

Contextual Info: NCP1396A, NCP1396B High Performance Resonant Mode Controller featuring High-Voltage Drivers The NCP1396 A/B offers everything needed to build a reliable and rugged resonant mode power supply. Its unique architecture includes a 500ĂkHz Voltage Controlled Oscillator whose control mode brings

1N5200

Abstract: 1n5226b 1N5250B 20 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B
Contextual Info: Absolute Maximum Ratings* Symbol PD Tolerance: B = 5% TA = 25°C unless otherwise noted Parameter Value Units 500 4.0 -65 to +200 mW mW/°C °C TSTG Power Dissipation Derate above 75°C Storage Temperature Range TJ Maximum Junction Operating Temperature + 200

ADM2484E

Abstract: SD103C ADP3330
Contextual Info: 500 kbps, ESD Protected, Half-/Full-Duplex, iCoupler, Isolated RS-485 Transceiver ADM2484E FEATURES FUNCTIONAL BLOCK DIAGRAM VDD2 VDD1 ADM2484E DE GALVANIC ISOLATION TxD Y Z A RxD B RE GND1 GND2 06984-001 Isolated, RS-485/RS-422 transceiver, configurable as half- or

Contextual Info: MCC TM Micro Commercial Components DL5221 THRU DL5276
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x • 500 mW Zener Diode 2.4 to 150 Volts Wide Voltage Range Available

Contextual Info: IRF830 Advanced Power MOSFET FEATURES B V DSS - 500 V ^DS on = 1 .5 0 . ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology LO ii Q ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: IRFS440A Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 6 .2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

sec irf840

Abstract: IRF840 MOSFET SEC IRF 640
Contextual Info: IRF840 Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

tle2202

Contextual Info: TLC2202, TLC2202A JL C 2 2 0 2 B , TLC2202Y Advanced LinCM O S LOW-NOISE PRECISION DUAL OPERATIONAL AMPLIFIERS D3497, MAY 1990 - REVISED AUGUST 1991 TLC2202B Is 100% Tested for Noise: 25 nV/VHz Max at f = 10 Hz 12 nV/VRz Max at f = 1 kHz Low Input Offset Voltage . . . 500 jiV Max

SEC IRF 640

Contextual Info: IRF840A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: IRFP450A A d van ced Power MOSFET FEATURES B V dss = 500 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .4 £ 2 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: IRF820A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 3 .0 Ì2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology LO c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

SS TRANSISTOR

Abstract: L497A
Contextual Info: TL497AM, TL497AI, TL497AC SWITCHING VOLTAGE REGULATORS D 2 2 2 5 . JU N E 1 9 7 6 - R E V IS E D O C T O B E R 19 8 8 • High Efficiency . . . 6 0 % or Greater • Output Current . . . 500 mA • Input Current Limit Protection • TTL Compatible Inhibit •

fmp2fu

Abstract: FMP-3FU FMV3GU FMP-3FU DATASHEET FMQ-2FUR damper diodes 3gu diode
Contextual Info: VRM V Division IFSM (A) I F (AV) (A) Part Number 50Hz (Diode modulation Type) Tj (°C) Tstg (°C) Half-cycle Sinewave Single Shot 1500 600 FMV-3FU 5.0 FMV-3GU 5.0 FMP-2FUR 5.0 50 IR (µA) IR (H) (mA) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

B180

Abstract: B1100 B120 B130L B140 B160 B170 CD214A-B120 63 marking, sma package diode
Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ Lead free RoHS compliant* SMA package Surface mount Very low forward voltage drop CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 October 1999. INCH-POUND MIL-PRF-19500/516D 23 July 1999 SUPERSEDING MIL-S-19500/516C 20 January 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE

MO-275

Abstract: BS448 Mullard
Contextual Info: S P E C I A L Q U A L I T Y D O U B L E D IO D E M82I2 Special quality double diode with separate cathodes and internal screening between sections for use in equipment where mechanical vibrations and shocks are unavoidable and where statistically controlled major electrical characteristics are required.

diode 4148

Abstract: 4148 diode diode do35 C 4148 B916 FDLL4148 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914

Contextual Info: LD421850 TM POW-R-BLOK Dual SCR/Diode Isolated Module 500 Amperes / 1800 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual SCR/Diode Modules are designed for use in applications requiring phase control and isolated

Contextual Info: BZX85-C3V6 THRU BZX85-C62 ZENER DIODES FEATURES DO-41 G lass ♦ Silicon Planar Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high power rating. max. 0 0.102 2.6 ♦ The Zener voltages are graded according to the international E 24 standard. Replace suffix “C” with “B”

1N5225

Abstract: 1N5262 SL5225 SL5226 SL5227 SL5228 SL5229 SL5230 SL5262
Contextual Info: SL5225 THRU SL5262 SILICON PLANAR ZENER DIODES, 500 mW, MINIMELF PACKAGE Silicon Planar Zener Diodes Standard Zener voltage tolerance is +20%. Add suffix "A” for ±10% to le ra n ce and su ffix “B" for ± 5 % tole ran ce. O th er A dm issible po w e r dissipation

B180

Contextual Info: PL IA N T Features CO M • RoHS compliant* *R oH S ■ SMA package ■ Surface mount ■ Very low forward voltage drop CD214A-B120 ~B1100 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

SOT-23

Contextual Info: Formosa MS SMD Zener Diode BZD84C SERIES List List. 1 Package outline. 2 Features. 2