B 1370 Search Results

Contextual Info: F IG NO 170 J70T L J70FL 1370 J74 I7 4 T L J74FL J374 J79 J79T L J79FL J379 -7 3 .7 4 -75 -7 5 F L -3 7 5 1 A / B /6 A 1A/B 1A/B 1A/B 2A/B 2A/B. ZA/B 2A/B 3A/B 3 A /B 3A/B 3A/B 4A 4A/5A/B 4B/5A/A 4 Ö /5A 5B/6B CJ30 Gl —1 -2 5 — 49 -7 3 -9 7 -121 -1 4 5

1N3307

Abstract: 1N3327 1N3327BR IR 94 1N3328 1N3326 1N3311 1N3315 1N3320 1n3321
Contextual Info: zener diodes diodes zener Types VZT/'ZT min 50 W / 1N 3305 B 1N 3306 B 1N 3307 B 1N 3308 B 1N 3309 B 1N 3310 B 1N3311 B 1N 3312 B 1N 3314 B 1N3315 B 1N 3317 B 1N 3319 B 1N 3320 B 1N 3321 B 1N 3323 B 1N 3324 B 1N 3325 B 1N 3326 B 1N 3327 B 1N 3328 B 1N 3330 B

B1370

Abstract: 2SB1370 2S81370 tr, 2sb1370
Contextual Info: 2 S B 1 3 7 0 Transistors X>Rea» flB09:X28 <5 66 Power Transistor ( —60V, —3A 2 S B 1370 • A b s o lu t e m ax im u m ra tin g s (T b = “ 25‘C ) 1) 2) 3) 4' L o w V c tw o . (T yp —0 .3 V at lc A s = _ 2 /—0-2A ) Excellent O C cu rre n t gain characteristics

qm431

Abstract: E60693 terminals crimped DIN 46249 KEMA keur t 85 e 156176 KLIPPON 16K3 131706 diode catalogue 160455
Contextual Info: BBJ Zulassungen/approvals QK/T. Saringer, Datum: Type Cat. No. Approval No Volts AMPS Wire mm2 EK 10 035466 B/12/1145/96 10 EK 10/35 066136 B/12/1145/96 10 EK 16 037466 B/12/1145/96 16 EK 16/35 019016 B/12/1145/96 16 EK 2.5/35 066106 B/12/1145/96 2,5 EK 2.5N

0PA128

Abstract: OPA128SM-BI
Contextual Info: BURR-BROUN CORP H E b u r r -b r o w n I b b D | 1 7 31 3b5 001370E Û | OPA128 I MILITARY & DIE V E R S IO N S A V A IL A B L E Electrometer-Grade OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • ULTRA-LOW BIAS CURRENT: 75fA max • ELECTROM ETER • LOW OFFSET: 50QuV max

Contextual Info: mi ^ instructions Bulletin 1370 Conversion Kit for Series B Regulator Board and Pulse Board These instructions describe how to properly install and set-up the Series B Regulator Board and Pulse Board. It is suggested that the user thoroughly read these instructions before any board replacement is

d687

Abstract: h337 a7338 C2227 transistor D227 EPCOS 1400 09 O B568 L2227M B41303-A7338-M equivalent j8338
Contextual Info: Snap-In Capacitors B 41 303 85 °C B 43 303 B 41 303, B 43 303 GP grade For universal application Construction • Charge-discharge proof, polar ■ Aluminum case, fully insulated ■ Snap-in solder pins to hold component in place on PC-board ■ Minus pole marking on case surface

Contextual Info: BENCHÏ1ARÛ niCROELEC bûE D 137001=] 0001547 150 « B E N bq4015/bq4015Y BENCHMARQ 512Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4015 is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The

ZNR14K201U

Abstract: znr14k201 ZNR14K star delta auto trans wiring diagram ERZ-C14DK201V thyristor 6-pulse full wave firing circuit znr14 ERZC14DK201 TB118 AC drives regenerative braking circuits diagram
Contextual Info: ALLEN-BRADLEY Instruction Manual Bulletin 1370 DC Drive Module Series B Price: S25.00 Because of the variety o f uses for this equipm ent ana because o f the differen ces b etw een this solid state equipm ent and electrom echanical equipm ent, th e user of

Contextual Info: böE D BENCHHARÛ MICFOELEC 137001^ 0001215 ^Tû « B E N bq2005 BENCHMARQ Dual-Battery Fast Charge IC Features General Description >- Fast charge control and conditioning for one or two NiMH or NiCd batteries The CMOS bq2005 Dual-Battery Fast Charge IC provides comprehen­

BB113

Abstract: BB-II38 BB-1138 M1136 BB-II38-032 103 z cm 64
Contextual Info: 13 12 MATERIAL NO. LOOSE PIECE 190160085 190160099 190160006 190160040 190160082 190160098 190160005 190160039 190160081 ENGINEERING NO. P - II4 2 M - II3 6 - 0 3 2 A A -II3 T -0 3 2 B B - 1138-032 P - I I3 9 - 0 3 2 M -II3 6 A A -II3 7 B B -II3 8 P-1139 11

Contextual Info: MOTOROLA Order this document by MC10EP33/D SEM ICONDUCTO R TECHNICAL DATA Product Preview ~ M C 10EP33 4 D ivider The MC10EP33 is an integrated + 4 divider. The differential clock inputs and the V b b allow a differential, single-ended or AC coupled interface to the device. If used, the V b b output should be bypassed to

ITT 7400

Abstract: EI 33 GVA-60 DSAGER00065 itt 129 i8428 ei 306 20 64
Contextual Info: ^ r a - •"i 1 1 t 1 1 1 i 1 1 1 1 1 <5 L- t» c a) B ild 5.4. K e rn e ; a - Schenkelkern, b - M antelkern Bild 5.5. V erschiedene gebräuchliche K em b lech sch n itte fü r Ü b e rtra g e r; a - M -S ch n itt, b - E i-S c h n itt, c - U l-S ch n itt

MKC2

Abstract: B1213
Contextual Info: B143-70/32 BblCOKOBOJlbTHblÑ MMmMbCHblf KEHOTPOH PULSE RECTIFIER TUBE BblCOKOBOJIbTHblÜ HMnyjIbCHblM KeHOTpOH BM3-70/32 n p e flH a 3 HaHeH flr m p a ó o T b i b « a n e c T B e K J in n n n p y io ii e ro , 3 a p flflH o ro , 3 aLi|i/iT H oro i/i B b in p a M M T e /ib H o ro

HX8340B

Abstract: HX8340-B mx 362-0
Contextual Info: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver

HX8340-B

Abstract: diode s524 HX8340 HX8340B crl 858 TVS DIODE KVP 99
Contextual Info: DATA SHEET DOC No. HX8340-B(T -DS ) HX8340-B(T) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 February, 2008 HX8340-B(T) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver

IN 3307B

Contextual Info: Zener Regulator Diodes Mic/gsggv ! M ic ro s e m i | P a c k a g e D iv is io n JA N T X 1 N 4 5 5 5 B 1N 2804A 1N 2804B 1N 3305A 1N 3305B JA N 1 N 2 8 0 4 B JA N 1 N 3 3 0 5 B JA N T X 1 N 2 8 0 4 B J A N T X V1N 2804B JA N T X V 1 N 3 3 0 5 B 1N 4556A 1N 4556B

LE50

Abstract: 2SB1370 2SB1565 2SB1655 B303
Contextual Info: 2SB1370 2SB1655/ 2SB1565 Transistors I Power Transistor 60V, —3A 2S B 1370 • A b s o l u t e m a x im u m r a tin g s •F e a tu re s 1 ) Low saturation voltage, typically VcE(sat) = — 0 . 3 V at le / Ib = —2A / - 0 .2 A . 2 ) Excellent DC curre nt gain characteristics.

pt100 LAPP

Abstract: IRE 9530 transistor BU 210 pt100 burr brown PT100 ICE 751
Contextual Info: B U R R -B R O W N I XTR105 1 www. bu rr-b rown.com/d ata boo k/XTR105. htm I 4-20mA CURRENT TRANSMITTER with Sensor Excitation and Linearization FEATURES APPLICATIONS • LOW UNADJUSTED ERROR • INDUSTRIAL PROCESS CONTROL • TWO PRECISION CURRENT SOURCES

HYMP525P72BP4

Abstract: HYMP512R72BP4-E3 HY5PS12821BFP HYMP525R72BP4-E3 HY5PS12821B
Contextual Info: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb B ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DDR2 DIMM

elcon SERIES 1000

Contextual Info: Intrinsic Safety Isolation Barriers SIB 1000 Series 380 $ Basic Unit C A B A B ߜ Input Output Isolation ߜ For J, K, T, E, R, S, B Thermocouples, mV, and Pt100 and Ni100 RTDs ߜ Converts Signal from Hazardous Location into 4 to 20 mA Signal ߜ Field Programmable

DDR2-400

Abstract: DDR2-533 DDR2-667 HY5PS12821BFP
Contextual Info: 240pin DDR2 VLP Registerd DIMMs based on 512 Mb B ver. This Hynix DDR2 VLP Very Low Profile registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver.

HYMP525R72BP4-E3

Abstract: HY5PS12821B HY5PS12821BFP HYMP512R72BP4-E3 HYMP564R72 HY5PS12421B HY5PS12421BFP HYMP
Contextual Info: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb B ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DDR2 DIMM

HY5PS12821

Abstract: HYMP125P72BMP4L-C4 HYMP512P72BP4L-C4 DDR2-533 DDR2-667 HY5PS12821BFP HYMP125P72BMP4L
Contextual Info: 240pin DDR2 VLP Registerd DIMMs based on 512 Mb B ver. This Hynix DDR2 VLP Very Low Profile registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver.