MMBT5401
|
|
CREATEK Microelectronics
|
MMBT5401 is a high voltage NPN transistor in SOT-23 package, featuring 160 V collector-base breakdown voltage, 600 mA collector current, and 300 mW power dissipation, suitable for medium power amplification and switching applications. |
Original |
PDF
|
|
|
|
AD-MMBT5401
|
|
JCET Group
|
PNP transistor in SOT-23 package, rated for -160V collector-base voltage, -150V collector-emitter voltage, with a continuous collector current of -0.6A and power dissipation of 0.3W, suitable for medium power amplification and switching applications. |
Original |
PDF
|
|
|
|
MMBT5401
|
|
Shenzhen Heketai Electronics Co Ltd
|
PNP bipolar transistor in SOT-23 package, with -160 V collector-base voltage, -150 V collector-emitter voltage, -600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. |
Original |
PDF
|
|
|
|
MMBT5401(RANGE:100-200)
|
|
JCET Group
|
MMBT5401 PNP transistor in SOT-23 package, with -150 V collector-emitter voltage, -0.6 A collector current, 0.3 W power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications. |
Original |
PDF
|
|
|
|
MMBT5401
|
|
Microdiode Semiconductor (MDD)
|
Small Signal Bipolar Transistor |
Original |
PDF
|
|
|
|
AD-MMBT5401-H
|
|
JCET Group
|
PNP plastic-encapsulated transistor in SOT-23 package, with collector-base voltage of -160 V, collector-emitter voltage of -150 V, continuous collector current of -0.6 A, and power dissipation of 0.3 W, suitable for medium power amplification and switching. |
Original |
PDF
|
|
|
|
MMBT5401
|
|
Shikues Semiconductor
|
|
Original |
PDF
|
|
|
|
MMBT5401
|
|
AK Semiconductor
|
PNP transistor in SOT-23 package with collector-base breakdown voltage of -160 V, DC current gain (hFE) ranging from 100 to 300, and maximum collector current of -0.6 A. |
Original |
PDF
|
|
|
|
MMBT5401
|
|
SLKOR
|
High Voltage Transistor, VCEO -150Vdc, VCBO -160Vdc, VEBO -6.0Vdc, Ic -500mAdc, PD 225mW, RΘJA 556°C/W, TJ 150°C. |
Original |
PDF
|
|
|
|
MMBT5401-G(RANGE:200-300)
|
|
JCET Group
|
MMBT5401 PNP transistor in SOT-23 package, with -150 V collector-emitter voltage, -0.6 A collector current, 0.3 W power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications. |
Original |
PDF
|
|
|
|
MMBT5401L
|
|
JCET Group
|
PNP transistor in SOT-23 package, complementary to MMBT5551, with -160V collector-base voltage, -150V collector-emitter voltage, -0.6A collector current, and 0.3W power dissipation. |
Original |
PDF
|
|
|
|
MMBT5401DW
|
|
Shikues Semiconductor
|
Double silicon PNP transistor in SOT-363 Plastic Package, high voltage, complementary Pair with MMBT5551DW. |
Original |
PDF
|
|
|
|
MMBT5401(RANGE:200-300)
|
|
JCET Group
|
MMBT5401 is a PNP transistor in SOT-23 package, rated for -150 V VCEO, -0.6 A collector current, with hFE ranging from 100 to 300, suitable for medium power amplification and switching applications. |
Original |
PDF
|
|
|
|
MMBT5401
|
|
Shandong Jingdao Microelectronics Co Ltd
|
MMBT5401 PNP transistor in SOT-23 package, with -160 V collector-base voltage, -150 V collector-emitter voltage, -5 V emitter-base voltage, continuous collector current of -0.6 A, and transition frequency of 300 MHz. |
Original |
PDF
|
|
|
MMBT5401
