AYW MARKING CODE IC Search Results

AYW marking code IC

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP-5 CASE 483-02 ISSUE H 5 DATE 18 MAY 2007 1 SCALE 2:1 NOTE 5 2X 0.10 T 2X 0.20 T NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES

TRANSISTOR AH-16

Abstract: AH-16 transistor TRANSISTOR AH-10 AH-16 npn AH MARKING SOT223 ah-16 sot 223 marking code AH BCP53-16T1G BCP53-10T1G Transistor AH10
Contextual Info: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps

Contextual Info: NCP785 Product Preview Wide Input Voltage Range 5 mA Ultra-Low Iq, High PSRR Linear Regulator http://onsemi.com The NCP785 is a high−performance linear regulator, offering a very wide operating input voltage range of up to 450 V DC, with an output current of up to 5 mA.

BCP68

Abstract: BCP69T1 BCP69T1G
Contextual Info: BCP69T1 PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features

AYW marking code IC

Abstract: 306 marking code transistor MARKING KV SOT-223 BSP16T1 BSP19AT1 BSP19AT1G
Contextual Info: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for

TRANSISTOR bH-16

Abstract: TRANSISTOR bH-10 bh16 transistor marking BH SOT-223 BH 16 transistor BH-16 ON bh-16 marking BH-10 BH-16 SOT BH-16 transistor
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

4030p

Contextual Info: NJT4030P Preferred Device Product Preview Bipolar Power Transistors PNP Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc POWER BJT IC = 3.0 AMPERES BVCEO = 40 VOLTS • High DC Current Gain −

BSP52T1

Abstract: BSP52T1G BSP52T3 BSP52T3G BSP62T1 306 marking code transistor
Contextual Info: BSP52T1, BSP52T3 Preferred Devices NPN Small−Signal Darlington Transistor This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is

transistor P2F

Abstract: ON MARKING P2F sot223 p2f PZT2907AT1G SOT-223 P2f p2F 45 PZT2222AT1 PZT2907AT3 PZT2907AT1 PZT2907AT3G
Contextual Info: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

BCP68T1

Abstract: BCP68T1G BCP68T3 BCP68T3G BCP69T1
Contextual Info: BCP68T1 Preferred Device NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.

brd8011

Abstract: BSP16T1G
Contextual Info: BSP16T1G High Voltage Transistors PNP Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -300 Vdc Collector-Base Voltage VCBO

4030p

Abstract: NJT4030p NJT4030PT1G NJT4030PT3G
Contextual Info: NJT4030P Bipolar Power Transistors PNP Silicon Features • Collector -Emitter Sustaining Voltage -      VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -= 200 (Min) @ IC = 1.0 Adc hFE = 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage -VCE(sat) = 0.200 Vdc (Max) @ IC = 1.0 Adc

NSB9435T1G

Abstract: 9435R
Contextual Info: NSB9435T1G High Current Bias Resistor Transistor PNP Silicon Features http://onsemi.com • Collector −Emitter Sustaining Voltage − • • • • • VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − = 125 (Min) @ IC = 0.8 Adc hFE = 90 (Min) @ IC = 3.0 Adc

BSP16T1

Abstract: BSP16T1G
Contextual Info: BSP16T1 Preferred Device High Voltage Transistors PNP Silicon Features •ăPb-Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -300 Vdc Collector‐Base Voltage VCBO -350 Vdc Emitter‐Base Voltage

TRANSISTOR AH-16

Abstract: BCP53 AH MARKING SOT223 ah-16 TRANSISTOR BCP53 BCP53T1G AH-16 npn BCP53-10T1 BCP53-10T1G BCP53-16T1
Contextual Info: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps

MC74VHC1GT50DTT

Contextual Info: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter TTL−Compatible Inputs Features • • • • • • • • • • Designed for 1.65 V to 5.5 VCC Operation High Speed: tPD = 3.5 ns Typ at VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C

A114

Abstract: A115 C101 JESD22 MC74VHC1GT14
Contextual Info: MC74VHC1GT14 Schmitt−Trigger Inverter / CMOS Logic Level Shifter LSTTL−Compatible Inputs Features • • • • • • • • • High Speed: tPD = 4.5 ns Typ at VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V

VM MARKING CODE SOT353

Abstract: A114 A115 C101 JESD22 MC74VHC1GT86
Contextual Info: MC74VHC1GT86 2−Input Exclusive OR Gate / CMOS Logic Level Shifter with LSTTL−Compatible Inputs Features • • • • • • • • • High Speed: tPD = 4.8 ns Typ at VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V

Contextual Info: MMJT9410 Bipolar Power Transistors NPN Silicon Features • SOT−223 Surface Mount Packaging • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS

ncp785ah33

Contextual Info: NCP785A Product Preview Wide Input Voltage Range 10 mA Ultra-Low Iq, High PSRR Linear Regulator http://onsemi.com The NCP785A is a high−performance linear regulator, offering a very wide operating input voltage range of up to 450 V DC, with an output current of up to 10 mA.

MMJT9410

Abstract: MMJT9410G
Contextual Info: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS

Contextual Info: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −

A114

Abstract: A115 C101 JESD22 M74VHC1GT04DFT1G MC74VHC1GT04 MC74VHC1GT04DFT1
Contextual Info: MC74VHC1GT04 Inverting Buffer / CMOS Logic Level Shifter LSTTL−Compatible Inputs Features • • • • • • • • • High Speed: tPD = 3.8 ns Typ at VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C http://onsemi.com MARKING DIAGRAMS

Contextual Info: MC74VHC1GT02 Single 2−Input NOR Gate/ CMOS Logic Level Shifter LSTTL−Compatible Inputs Features • • • • • • • • • High Speed: tPD = 4.7 ns Typ at VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V