AX909 Search Results

Contextual Info: s, AP A d va n c e d P e rfo rm a n c e Series V DSs = 2 5 0 V 206 3 N Channel Power M O SFET £4321 F e a tu re s •Low ON resistance. ■Very high-speed switching. • Low-voltage drive. • M icaless package facilitating mounting. A b so lu te M ax im u m R a tin g s a t Ta = 25°C

m 43171

Abstract: 2sj307 43171
Contextual Info: 2SJ307 AP A d v a n c e d P e rfo rm a n c e Series V D3S= 2 5 0 V 2063 P Channel Power M OSFET £ 4 3 17 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C

2SJ306

Contextual Info: 2SJ306 AP A dvanced Perform ance Series V dss = 2 5 0 V 2063 P Channel Power M O SFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •M icaless package facilitating mounting. b so lu te M axim um R a tin g s a t Ta = 25°C

2SK2010

Contextual Info: Ordering num ber:EN 4319 _ 2SK2010 No.4319 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M icaless package facilitating mounting. A b so lu te M axim um R a tin g s at Ta = 25°C

2SK2012

Contextual Info: Ordering number:EN4321A N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK2012]

2SJ306

Contextual Info: Ordering number:EN4316 P-Channel Silicon MOSFET 2SJ306 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ306]

SB10-015C

Contextual Info: SB10-015C 注文コード No. N 4 4 3 6 B 三洋半導体データシート 半導体ニューズ No. N4436A とさしかえてください。 SB10-015C ショットキバリアダイオード 15V, 1A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。

MAX909ESA

Contextual Info: jv w v x a / sa 19-0129; Rev. 3; 7/94 S in g le /D u a l/Q u a d H ig h •Speed, U ltra L o w -P o w e r, S in g le • S u p p ly T T L C o m p a ra to rs Because they are micropower, high-speed com para­ tors that operate from a single +5V supply and include

GT 4317

Abstract: EN4317A 2063A taito 2SJ307 EN4317
Contextual Info: Ordering number:EN4317A P-Channel Silicon MOSFET 2SJ307 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ307]

Contextual Info: Ordering number:EN4321A N-Channel Silicon MOSFET _ 2SK2012 m i “ Ultrahigh-Speed Switching Applications Package Dimensions Features •Lo w O N resistance. •Ultrahigh-speed switching. -Low-voltage drive. •Micaless package facilitating mounting.

2SJ307

Contextual Info: Ordering number:EN4317A P-Channel Silicon MOSFET 2SJ307 s a H yoi Ultrahigh-Speed Switching Applications Features Package Dimensions • L ow O N resistance. umt:mm • U ltrahigh-speed sw itch in g. 2063A • L o w -voltage drive. [2SJ307] • M ica less package facilitatin g m ounting.

43171

Abstract: EN4317 2SJ307
Contextual Info: Ordering num ber: EN4 3 1 7 _ 2SJ307 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M icaless package facilitating mounting. b so lu te M axim um R a tin g s a t Ta = 25°C

1C00

Abstract: 2SJ306
Contextual Info: Ordering num ber: E N 4316 2SJ306 No.4316 P-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu re s •Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. ■Micaless package facilitating mounting. A bsolute M axim um R atin g s a t Ta = 25°C

Diode U160

Abstract: 2SJ308
Contextual Info: Ordering number : EN 4 3 1 8 2SJ308 No.4318 P-Channel MOS Silicon FET SANYO i Very High-Speed Switching Applications F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating mounting. A bsolute Maximum Ratings at Ta = 25°C

2SJ308

Abstract: ITR00414 ITR00415 ITR00416 ITR00417
Contextual Info: 注文コード No.N 4 3 1 8 2SJ308 三洋半導体ニューズ No. 4 3 1 8 61499 新 2SJ308 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

2SK2011

Abstract: EN4320
Contextual Info: Ordering number:EN4320A N-Channel Silicon MOSFET 2SK2011 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK2011]

9099 dm

Contextual Info: 2SK2058 AP A d v a n c e d P e rfo rm a n c e Series V DSS= 2 5 0 V 2056 N Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage

Transistor gd 907

Abstract: MAX907CPA
Contextual Info: 19-0129; Rev. 2; 4/93 Single/Dual/Quad High • •Speed, U ltra Low-Power, Single »Supply TTL C om parators Because they are micropower, high-speed compara­ tors that operate from a single +5V supply and include built-in hysteresis, these devices replace a variety of

2SK2058

Contextual Info: Ordering num ber: EN 4315 No.4315 2SK2058 N-Channel MOS Silicon FET Very High-Speed Switching Applications i Features - Low ON resistance. • Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain-to-Source Voltage

2SJ306

Abstract: ITR00394 ITR00395 ITR00396 ITR00397 ION210
Contextual Info: 注文コード No.N 4 3 1 6 A 2SJ306 No. 4 3 1 6 A 61599 半導体ニューズ No.4316 とさしかえてください。 2SJ306 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。

SB10-015C

Abstract: 82597 in 4436
Contextual Info: SB10-015C Ordering number : ENN4436B SB10-015C Schottky Barrier Diode 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • • Low forward voltage (VF max=0.55V). Fast reverse recorvery time (trr max=10ns).

GT 4317

Abstract: EN4317A 2SJ307 EN4317 43171
Contextual Info: Ordering number:EN4317A P-Channel Silicon MOSFET 2SJ307 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ307]

4436

Contextual Info: Ordering num ber: E N 4436 SB10-015C No.4436 Schottky B arrier Diode SAXYO i 15V, 1A Rectifier A p p lic a tio n s • H igh frequency rectification sw itching regulators, converters, choppers . F e a tu r e s • Low forw ard voltage (Vp max = 0.55V). •F ast reverse recovery time (trr m ax = XOns).

2SJ308

Contextual Info: 2SJ308 AP A d v a n c e d P e rfo rm a n ce Series 2063 V Ds s = 2 5 0 V P Channel Power M OSFET •£■»318 F e a tu re s ■Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating m ounting. b so lu te M ax im u m R a tin g s a t Ta = 25°C