AX DSM MA NE Search Results

Contextual Info: Variable Capacitance Diodes #Tuning Diodes Capacitance can be changed linearly and widely as frequency changes. This frequncy response can be used as tuning element on VHF and UHF circuits. Packaged in pin 2 mini for high density mounting application. Electrical characteristics

Contextual Info: RSM page 30 I. Le bouchon D S M 96*-B se differencie du D S M 96 *-A par un circlip fnlerdJsant le deverrouilfage. NOTA, 1. DSM 9 6 * -B dustcap is different from D S M 9 6 * * -A by & dip preventing UNLOCKING. NOTE. 1. Die Schutzkappe DSM 96*-B unterscheldet alch von DSM 38*-A durch einen Slcherungsring,

RN731H

Abstract: SMD CODE "SMD Code" 1SV223
Contextual Info: Variable Capacitance Diodes #Tuning Diodes Capacitance can be changed linearly and widely as frequency changes. This frequncy response can be used as tuning element on VHF and UHF circuits. Packaged in pin 2 mini for high density mounting application. E lectrical characteristics

G732

Abstract: MA811 Marconi radiation hard
Contextual Info: MARCONI CKT TECHNOLOGY 3GE D • S7Ô3442 0001520 5 ■ 7^75'"'// ' 3 3 Digital Switch Module M @ ïc s a i Electronic Devices FEATURES MA811 DIO [7 DI1 DI2 2| FSP1 [2 27] VDD [3 26] CLK 2| CI1 * Single 5v supply DI3 [4 * Low power CMOS design DI4 [5 ¡3

Contextual Info: W FLESSE Y Semiconductors. ZN451 3'k DIGIT DVM 1C WITH EXTERNAL AUTO-ZERO The ZN451 is a complete digital voltmeter fabricated on a monolithic chip. A novel charge-balancing conversion technique ensures good linearity. The auto-zero function is completely digital in operation, thus obviating the need for a

ior e78996

Abstract: IR E78996
Contextual Info: INTERNATIONAL RECTIFIER bSE D m INR MÖ55452 DDlbEL.^ T74 Bulletin E27104 International 1»] Rectifier IRFK4H150.IRFK4J150 Isolated Base Power H E X -p ak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.

Contextual Info: Netz-Thyristoren Phase control thyristors ^TAVM^C V TO (d i/d t)cr rT Q. / i 2d t o Itrmsm Itsm V drm Type < Typ Cl Thyristors pour applications réseau Vgt Rthjc Igt Outline V rrm V dsm = V drm 10 ms, 10 ms, tVJ = tvi max tv. max 180 °el sin '»,= V rsm = V rrm + 100 V

d3000 mosfet

Abstract: analogue ohmmeter circuit diagram ZN490 transistor d3000 d3000 TL091 ZN451 ZN451E d3000 fet ZN451CJ
Contextual Info: ZN451E ZN451CJ 3% digit DVM 1C with external auto-zero FEATURES DESCRIPTION • External circuits may be included in the auto-zero loop • Full-scale reading '1.999mV or lower • Measures sum or difference of two inputs • Digital auto-zero with guaranteed zero

20S13

Contextual Info: PLESSEY S E M IC O N D U C T O R S 15E D • 7HS0S13 OOCHna T PLESSEY S e m ic o n d u c to r s i* .■ ■. « t t s - t t - o ZNPCM1 SINGLE CHANNEL CODEC FEATURES • • • • • C o n v e rts a d e lta -s ig m a m o d u la te d d ig ita l p u lse s tre a m in to c o m p re s s e d 'A ' la w p cm

KT784

Abstract: KT207/600 KT207/400 KT774 KT728 KT783 KT728/800 KT728/600 KT773 kt207
Contextual Info: Type Typ Maxim um ratings • Grenzdaten 1T A V 1 A It S M UdäM &c A V CC TRIACS IN PLASTIC CASE ; • 3 25 KT205/200 3 25 KT205/400 3 25 KT205/600 U djìm V TRIACS IN PLASTGEHAUSE 100 200 200 400 400 100 100 600 600 I d 2) m ax al bei U dsm tar U cr Iff

SC146B

Abstract: SC146M SC-146B
Contextual Info: NEC TRIAC S C 14 6B ~ S C 14 6M ELECTRON DEVICE The SC146B ~ SC146M are all diffused m old type triac granted Outline Drawing Unitimm RMS On-state current 10 Amps. M AX The glassivation technique applied to pellets’ surface makes this MAX 4 8 series qu ite highly reliable.

ts26

Abstract: DIODE ED 11 T188F TS18 25G30
Contextual Info: Fast Thyristors Type Vdrm I trmsm ' tsm V RRM V A kA V dsM~Vdrm, 10 ms, V rsM=V rrm + T v| max ! VT/ I T V TO rT (di/dt) cr (d v /d t)cr V gt ¡GT ^thJC V/kA V m Q A /ps V/|js V mA ° c /w max T ,= Tv¡ = 25°C 25°C 180° el sin °c T vj max DIN IEC 747-6

Contextual Info: 2.8 REF, ooooooooooooooooooooo0ooooooooooo0o° Oo0o0o0o0o0o0o0o0o0o0o0o0o0o0o0o0o°o0 OOOO0 o o o o o o o o o o o o o o °o°o0 <DÄG ._ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ °«PUP °0°0° 0°0°0 J3u  °o0o° w©«O o ÄQ jQ « Ä© <DÄ 2.54 TYP. REF. 1.27 TYP. REF.

hz nec

Abstract: AC10FGM AC10D AC10DGM AC10EGM AC10F6M AC10E AC-10F
Contextual Info: NEC T R IA C S ELECTRON DEVICE A G I ODGM to A C 1 0 F G M 10 A MOLD TRIAC The AC10DGM to AC10FGM are all diffused mold typ e triac granted PACKAGE DIMENSIONS 10.5 MAX. , 4 3.6 RMS On-state current 10 Amps, w ith rated voltages up to 600 volts. U n it: mm

NEC 3P4MH

Abstract: nec 3p4m 3P4M 3P2M 3p4mh 3P1MH 3P4M scr 3P1M
Contextual Info: NEC GLASS PASSIVATED 3A 4.7Arm s MOLD SCR ELECTRON DEVICE 3P1 M H ,3 P 2 M H ,3 P 4 M H The 3P1MH ~ 3P4MH are P-gate all diffused m old ty p e SCR granted average on-state current 3 Amps (T c = 87°C). O U T L IN E D R A W IN G (Unit : mm) Being applied glassivation

nec 5p4m

Abstract: nec5p4m 5p4m thyristor motor speed control circuit 5P6M Thyristor NEC thyristor 5P4M nec 5p6m 5p6m 5P6M NEC 5p5m
Contextual Info: NEC TH YRISTO RS BfCTRON DEVICE 5P4M, 5P5M, 5P6M 5 A 8 Ar.m .s. THYRISTOR The 5P4M to 5P6M are a P gate all diffused mold type T h yristo r granted PACKAGE D IM ENSIONS 5A m p On-state Average Current (Tc=103 °C) in m illim eters 4.8 MAX. 3.6 FEATURES

triac control s202se2

Abstract: 11ARMS s202se1 sharp S216SE1 16A260VAC S202SE1
Contextual Info: SHARP S202SE1 /S202S E2/S216SE1/S216SE2 S202SE1 /S202SE2 S216SE1/S216SE2 SIP Type SSR for Medium Power Control •Features ■ Outline Dimensions 1. Comforms to European Safety Standard EN60950 (Need of the insulation sheet when mounting external heat sink)

T308

Abstract: T930S C122B T188F
Contextual Info: Fast Thyristors T yp e V drm V RRM V It r m s m Itsm It a v m ^ c V TO It (d i/d t)cr A kA A 2s A /°C V m il A /p s 10 ms, 10ms, Wj max ^vj max 180° el sin ^vj max ^vj max DIN I EC 747-6 72/85 1,25 1,8 200 V dsm= V drm , V rsm=V rrm+ 100 V T 72 F 200. 800

A190A

Contextual Info: C O N V ER T ER G R A D E T H Y R IS T O R Voltage Ratings 500 I J CR 140 U and F Series I t A V 8 5 ° C = 1 5 0 A I 1000 L_ J 1500 L_ J _ L I u 2000 UNIT I— I V rsm V l2t = 7 6 ,0 0 0 A 2s e c V dsm V RATIN GS AND C H A R A C T ER IS T IC S V rrm

analogue ohmmeter circuit diagram

Abstract: transistor tt 2170 em digital ic cd 4066 BUT18
Contextual Info: ZE TE X INC TS » • TÌ70570 DDDbCm 4 ■ 95D 06 0 9 9 T 'S t - t O - e S " ZN451E ZN451CJ 3 y2 digit DVM 1C with external auto-zero DESCRIPTION EATURES External circuits may be included in the auto-zero loop ’ Full-scale reading 1 .9 9 9 m V or lower

125RGK

Contextual Info: NEC / ELECTRON DEVICE DATA SHEET “ / THYRISTORS . _ /_ 8P4J,8P4J-Z 8 A MOLD THYRISTOR DESCRIPTION The 8P4J and 8P4J-Z are P-gate ail diffu sed m old ty p e T H Y R IS T O R granted average on-state cu rre n t 8 Am ps Tc - 90 cC , w ith rated voltages up to 4 0 0 Volts.

BTY91-400R

Abstract: BTY91 BTY91 Series DVP 28 sv IBTY91 600R 800R 200A2S bty91 800r
Contextual Info: b^E J> N APIER PHILIPS/DISCRETE • b b S B ^ l DDE73T2 TÛT ■ APX _ I I B T Y 9 1 SERIES THYRISTORS Glass-passivated silicon th y ris to rs in m etal envelopes, intended fo r pow er co n tro l and pow er sw itch in g a p p lications.

BTW59

Abstract: gt 1436 transistor TO-238AA Mullard gate turn-off Gate Turn-Off Thyristors gate turn off thyristors transistor 1983 GFM 85A
Contextual Info: DEVELO PM EN T SAM PLE DATA BTW 59 SERIES T h is in fo r m a tio n is d e riv e d fr o m d e v e lo p m e n t sam ples m ade a v a ilab le f o r e v a lu a tio n . I t does n o t necessarily im p ly th a t th e d evice w ill go in to re g u la r p ro d u c tio n .

BTW42

Abstract: BTW42-600R
Contextual Info: L.5E D P H I L IP S I N T E R N A T I O N A L B 7 1 1 D ä 2 b DGt.5431 3TD • P H I N Jl BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase