AVW12 Search Results

45l50

Abstract: V53C104H
Contextual Info: M O S E L V I T E L IC V53C104H U LTR A -H IG H PERFO RM ANCE, L O W P O W ER 2 5 6 K X 4 B IT F A S T P A G E M O D E CM O S D YN A M IC R A M HIGH PERFORMANCE 45/45L 50/50L 55/55L 60/60L Max. RAS Access Time, 1RAC 45 ns 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA)

yrm 620

Contextual Info: ijf r VITEUC V53C104B HIGH PERFORMANCE, LO W POWER 256K X 4 B IT FAST PAGE MODE CMOS DYNAMIC RAM 60/60L 70/70L 80/80L Max RAS Access Time, t„ . _ 1 RAC' 60 ns 70 ns 80 ns Max Column Address Access Time, (*CAA) 30 ns 35 ns 4 0 ns Min Fast Page Mode Cyde Time, (tpç)

Contextual Info: M D K l W N N 5 1 V 4400 B s e rie s Fast Page Mode CMOS 1Mx4bit Dynamic RAM DESCRIPTION The N N 51V4400B series is a high perform ance CMOS Dynam ic Random A ccess M em ory organized as 1,048,576 words by 4 bit. The N N 51V4400B series is fabricated with advanced C M OS technology and designed with innovative de­

AVW12

Contextual Info: M O SE L V IT EL IC V53C16258H 2 5 6 K X 16 PAG E MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE Max. RAS Access Time, tRAC Max. Column Address Access Time, O caa) PRELIM INARY 40 45 50 60 40 ns 45 ns 50 ns 60 ns 20 ns 22 ns 24 ns 30 ns