AVALANCHE TRANSISTORS Search Results

Contextual Info: I BUZ11 BUZ11FI MAGNA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE FOR STANDARD PACKAGE ISOLATED PACKAGE UL RECOGNIZED,

BUZ72A

Contextual Info: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A VDSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY

STD4N25

Contextual Info: STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STD4N25 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy FEATURES QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable ott-state characteristics

BUZ72A

Contextual Info: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE

AVALANCHE TRANSISTOR

Abstract: FMMT417 ZTX413 ZTX415 4N7 CAPACITOR FMMT415 DIODE 4N7 disc capacitor 4n7, napoli avalanche transistors
Contextual Info: Design Note 24 Issue 1 October 1995 The ZTX413 Avalanche Transistor Low Voltage Operation up to 50A standard transistors.The ZTX413 provides avalanche operation over a voltage range of 60 to 150V, and can handle pulse avalanche currents of up to 50A See Figure 1 . These features

STD4N25

Contextual Info: STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STD4N25 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STD4N25

Contextual Info: STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STD4N25 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy SYMBOL FEATURES QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics

Contextual Info: Philips Semiconductors Preliminary specification PowerMOS transistors PHB9N60E, PHW9N60E Avalanche energy FEATURES • • • • • QUICK REFERENCE DATA SYMBOL Repetitive Avalanche Rated Fast switching

N50E

Abstract: PHP12N50E TRANSISTOR N50E
Contextual Info: Product specification Philips Semiconductors PowerMOS transistors PHP12N50E Avalanche energy FEATURES • • • • • SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E Avalanche energy SYMBOL FEATURES QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy rated_ SYMBOL FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy rated_ FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E Avalanche energy FEATURES QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics

BUZ11A

Contextual Info: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE

IRF620FI equivalent

Abstract: IRF620 IRF620FI
Contextual Info: IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 4A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

circuit diagram irf520

Abstract: GC233
Contextual Info: SGS-THOMSON IRF520 IRF520FI IttJtSTMtKS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI Voss R d S o ii Id 100 V 100 V 0.27 Q 0.27 Q 10 A 7 A • . ■ . . ■ AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

IRF620

Abstract: EQUIVALENT IRF620FI transistor irf620 IRF620FI
Contextual Info: IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 4A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

BUZ10

Contextual Info: BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 20 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE

BUZ10

Abstract: buz10 MOROCCO
Contextual Info: BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 20 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE

BUZ72A

Abstract: BUZ72A DATASHEET thomson tr 62
Contextual Info: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE

B 1449 transistor

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP3N50E, PHB3N50E Avalanche energy rated_ FEATURES • • • • • SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics

TO218 package

Abstract: irfp240 irfp240 circuit diagram IRFP240FI TO-218 Package
Contextual Info: SGS-THOMSON :U OT KS IRFP240 IRFP240FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR FP240 IRFP240FI . • . . V dss RüS(on Id 200 V 200 V 0.18 n 0.18 Q 20 A 13 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C