AV 51A Search Results
AV 51A Price and Stock
Kyocera AVX Components KGM05AV51A104ZHCAP CER 0.1UF 10V Y5V 0402 |
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KGM05AV51A104ZH | Cut Tape | 17,974 | 1 |
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KGM05AV51A104ZH | 10,000 |
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Kyocera AVX Components KGM15AV51A474ZTCAP CER 0.47UF 10V Y5V 0603 |
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KGM15AV51A474ZT | Cut Tape | 16,717 | 1 |
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KGM15AV51A474ZT | 4,000 |
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Kyocera AVX Components KGM05AV51A105ZHCAP CER 1UF 10V Y5V 0402 |
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KGM05AV51A105ZH | Cut Tape | 9,315 | 1 |
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Kyocera AVX Components KGM15AV51A104ZTCAP CER 0.1UF 10V Y5V 0603 |
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KGM15AV51A104ZT | Cut Tape | 7,546 | 1 |
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Kyocera AVX Components KGM15AV51A334ZTCAP CER 0.33UF 10V Y5V 0603 |
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KGM15AV51A334ZT | Reel | 4,000 |
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KGM15AV51A334ZT | Reel | 12 Weeks | 4,000 |
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AV 51A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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70V25
Abstract: CY7C0241 CY7C036AV IDT70V24 CY7C026AV-25AI CY7C025AV15
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CY7C024AV/025AV/026AV CY7C0241AV/0251AV/036AV 4K/8K/16K 4/8/16K CY7C024AV/025AV/026AV) CY7C0241 AV/0251 CY7C036AV) 35-micron 70V25 CY7C036AV IDT70V24 CY7C026AV-25AI CY7C025AV15 | |
Contextual Info: W jÊ CY7C024AV/025AV/026AV CY7C0241 AV/0251 AV/036AV PRELIMINARY 3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM Features • True dual-ported m em ory cells which allow sim ulta neous access of the same m em ory location • 4/8/16K x 16 organization CY7C024AV/025AV/026AV |
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CY7C024AV/025AV/026AV CY7C0241 AV/0251 AV/036AV 4K/8K/16K 4/8/16K CY7C024AV/025AV/026AV) CY7C0241AV/0251AV) CY7C036AV) 35-micron | |
Contextual Info: - • A.D. *e ft * iS fé Ta -25°C tè # te 5 I A , 5 1B ( 7 - f K Vcc Vcc ± 12— ± 18 V,d ± Vcc « =-j » HYB n x -(V ) $ |t t * 94 ± 40 ± 10 ±100 Vcc — & j£ K ') 77 ¡311 7 7E £ ft- 51A ±50 A Vio ÌA T 51B ± 20 V AV tolA T AL o/A T l O 'C t i ^ t è |
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Contextual Info: APTM50DHM65T Asymmetrical - Bridge MOSFET Power Module VDSS = 500V RDSon = 65mΩ Ω max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • • • Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features • • • • • |
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APTM50DHM65T | |
ZN3819
Abstract: IN457 equivalent uA748 3N128 equivalent 531 8PIN uA709 FD4725 NE531 diode IN457 3n128
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NE/SE531 NE531 NE5535 NE531 ZN3819 IN457 equivalent uA748 3N128 equivalent 531 8PIN uA709 FD4725 diode IN457 3n128 | |
UJ-845
Abstract: MOSFET Module transistor d 1556 APTM50DHM65T
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APTM50DHM65T UJ-845 MOSFET Module transistor d 1556 APTM50DHM65T | |
101ra100
Abstract: 22RC10 71RA120 36RA80 101RC60 PR002W 40RCS60 151ra100 250pa120 250RA80
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Contextual Info: 4- Half Bridge MOSFET Module With Gate Driver: Features: Description: • These power modules are suited for high reliability switching applications such as motion control, U PS systems, induction heating, and DC/DC and DC/AC switch mode power supplies. Both the gate drivers and the switching devices |
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Contextual Info: APT50M75JLLU2 APT50M75JLLU2 51A 0.075W 500V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON |
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APT50M75JLLU2 E145592 | |
48v 150A mosfet switchContextual Info: 8- Three-Phase Full-Bridge MOSFET Module With Gate Driver: Features: Description: •These power modules are suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/AC switch mode power supplies. Both the |
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7S03bS0 48v 150A mosfet switch | |
Contextual Info: APT50M75JLLU2 51A 0.075Ω 500V R POWER MOS 7 MOSFET K S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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APT50M75JLLU2 E145592 | |
tf 115 250v 15aContextual Info: APT50M75JLLU2 51A 0.075Ω 500V R POWER MOS 7 MOSFET K S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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APT50M75JLLU2 E145592 tf 115 250v 15a | |
Contextual Info: RCJ510N25 Nch 250V 51A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. |
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RCJ510N25 SC-83) R1102A | |
INDUCTION HEATING POWER SUPPLYContextual Info: 7- H-Bridge MOSFET Module With Gate Driver: Features: Description: •These power modules are suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/DC and DC/AC switch mode power supplies. Both the gate drivers and the switching devices |
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7503b50 INDUCTION HEATING POWER SUPPLY | |
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MC3403L
Abstract: mc3503l MC3303P mc1741 MC3303 Motorola MC3403L MC3303L MC3403P MC3303D MC3403
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MC3503 MC1741. MC1741 MC3403L mc3503l MC3303P mc1741 MC3303 Motorola MC3403L MC3303L MC3403P MC3303D MC3403 | |
Contextual Info: 5000W Surface Mount Transient Voltage Suppressor 5.0SMCJ12A – 5.0SMCJ170A 5000W Surface Mount Transient Voltage Suppressor Features • • • • Stand-off voltage from 12 to 170 volts Glass passivated junction Low inductance Excellent clamping capability |
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0SMCJ12A 0SMCJ170A DO-214AB | |
Contextual Info: LITE-ON SEMICONDUCTOR PSMCJ SERIES SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS REVERSE VOLTAGE - 6.8 to 250 Volts POWER DISSIPATION - 1500 WATTS FEATURES Glass passivated chip For surface mounted applications Low leakage Uni and Bidirectional unit |
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Contextual Info: LITE-ON SEMICONDUCTOR PSMCJ SERIES SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS REVERSE VOLTAGE - 6.8 to 250 Volts POWER DISSIPATION - 1500 WATTS FEATURES Glass passivated chip For surface mounted applications Low leakage Uni and Bidirectional unit |
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VEB mikroelektronik
Abstract: E355D D410D mikroelektronik DDR E351D DDR Schaltkreise Transistoren DDR E412D elektronik DDR E345D
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D4501X1 VEB mikroelektronik E355D D410D mikroelektronik DDR E351D DDR Schaltkreise Transistoren DDR E412D elektronik DDR E345D | |
P4SMA15CA
Abstract: P4SMA250C P4SMA350CA P4SMA130CA
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E223045 SMA/DO-214AC 214AC. DO--201 MIL-STD-750, 50mVp-p P4SMA15CA P4SMA250C P4SMA350CA P4SMA130CA | |
Contextual Info: P4SMA SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS – P4SMA SERIES FEATURE For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance. Excellent clamping capability. |
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SMA/DO-214AC DO214AC. MIL-STD-750, 50mVp-p 01-Oct-10 | |
C34064D-5
Abstract: TP3055EL MC34064 3055el MC34064P5 5151r TP3055E 3055E
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C34064 C33064 MC34064 O-226AA 3055E C34064D-5 TP3055EL 3055el MC34064P5 5151r TP3055E | |
Contextual Info: P6SMB SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS – P6SMB SERIES FEATURE For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance. Excellent clamping capability. |
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SMB/DO-214AA DO214AA. MIL-STD-750, 50mVp-p 01-Oct-10 | |
p6smb15a
Abstract: smb 82a 400C SMB P6SMB400CA P6SMB200A P6SMB15CA 43C 1CA 6V8C
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E223045 SMB/DO-214AA 214AMolded DO--201 MIL-STD-750, 10/1000sec. 50mVp-p p6smb15a smb 82a 400C SMB P6SMB400CA P6SMB200A P6SMB15CA 43C 1CA 6V8C |