AUTOMOTIVE RADAR SCHEMATIC DIAGRAM Search Results

77GHz Radar

Abstract: KIT20XS4200EVBE MRD2001 12v dc cdi schematic diagram for cdi PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH imx6 security reference GDI injector
Contextual Info: TM August 2013 • • Introduction Portfolio − System • • SBC PMIC − Power   Analog Switches High Side Switches Low Voltage Motor Control − System   Power Management Management & Automation Small Engine Configurable I/O − Battery & Energy Management

Contextual Info: TGV2204-FC 19 GHz VCO with Prescaler Key Features • • • • • • • • Measured Performance Bias conditions: Vcc = 5 V, Itotal = 165 mA Frequency Range: 18.5 – 19.5 GHz Output Power: 7 dBm @ 19 GHz Phase Noise: -105 dBc/Hz at 1 MHz offset, fc=19 GHz

HBT3 triquint

Abstract: cu pillar TGV2204-FC pillar HBT3
Contextual Info: TGV2204-FC 19 GHz VCO with Prescaler Key Features • • • • • • • • Measured Performance Bias conditions: Vcc = 5 V, Itotal = 165 mA Frequency Range: 18.5 – 19.5 GHz Output Power: 7 dBm @ 19 GHz Phase Noise: -105 dBc/Hz at 1 MHz offset, fc=19 GHz

Contextual Info: TGC4703-FC 19 to 38 GHz Doubler Key Features • • • • • • • • Measured Performance Bias conditions: Vd = 3.5 V, Vg1 = -0.4 V, Vg2 = +0.2 V, • 16 Primary Applications 15 • • 14 13 11 10 Product Description 9 8 Input Freq: 19.25 GHz 7 6

pillar

Contextual Info: TGC4703-FC 19 to 38 GHz Doubler Key Features • • • • • • • • Measured Performance Bias conditions: Vd = 3.5 V, Vg1 = -0.4 V, Vg2 = +0.2 V, • 16 Primary Applications 15 • • 14 13 11 10 Product Description 9 8 Input Freq: 19.25 GHz 7 6

TGC4703-FC

Contextual Info: TGC4703-FC 19 to 38 GHz Doubler Key Features • • • • • • • • Measured Performance Bias conditions: Vd = 3.5 V, Vg1 = -0.4 V, Vg2 = +0.2 V, • 16 Primary Applications 15 • • 14 13 11 10 Product Description 9 8 Input Freq: 19.25 GHz 7 6

Contextual Info: TGC4704-FC 38 to 77 GHz Doubler and Medium Power Amplifier Key Features • • • • • • • • • Measured Performance Bias conditions: Vd = 4.0 V, Vg1 = -0.4 V, Vg2= 0.2 V, Idq = 180 mA Typical • 15 Primary Applications 10 • • 5 Input Freq: 38.50 GHz

cu pillar

Abstract: TGC4704-FC
Contextual Info: TGC4704-FC 38 to 77 GHz Doubler and Medium Power Amplifier Key Features • • • • • • • • • Measured Performance Bias conditions: Vd = 4.0 V, Vg1 = -0.4 V, Vg2= 0.2 V, Idq = 180 mA Typical • 15 Primary Applications 10 • • 5 Input Freq: 38.50 GHz

Contextual Info: TGC4704-FC 38 to 77 GHz Doubler and Medium Power Amplifier Key Features • • • • • • • • • Measured Performance Bias conditions: Vd = 4.0 V, Vg1 = -0.4 V, Vg2= 0.2 V, Id = 240 mA Typical • 15 Primary Applications 10 • • 5 Input Freq: 38.50 GHz

cu pillar

Abstract: pillar
Contextual Info: TGA4705-FC 77 GHz Flip-Chip Low Noise Amplifier Key Features • • • • • • Frequency Range: 72 - 80 GHz Noise Figure: 5 dB at 77 GHz Gain: 23 dB Bias: Vd = 2.5 V, Id = 60 mA, Vg = +0.18 V Typical Technology: 0.13 um pHEMT with front-side Cu/Sn pillars

76-77GHz

Abstract: E-band mmic cu pillar
Contextual Info: TGA4706-FC 77 GHz Medium Power Amplifier Key Features • • • • Frequency Range: 76 - 83 GHz Psat: 14 dBm at 77 GHz Gain: 15 dB Bias: Vd = 3.5 V, Vg = +0.2 V, Idq = 125 mA Typical Technology: 0.13 um pHEMT with front-side Cu/Sn pillars Chip Dimensions: 1.86 x 1.37 x 0.38 mm

cu pillar

Abstract: automotive radar schematic diagram TGA4705-FC
Contextual Info: TGA4705-FC 77 GHz Flip-Chip Low Noise Amplifier Key Features • • • • • • Frequency Range: 72 - 80 GHz Noise Figure: 5 dB at 77 GHz Gain: 23 dB Bias: Vd = 2.5 V, Id = 60 mA, Vg = +0.18 V Typical Technology: 0.13 um pHEMT with front-side Cu/Sn pillars

77GHz Radar

Abstract: AT77 E-band mmic
Contextual Info: TGA4706-FC 77 GHz Medium Power Amplifier Key Features • • • • • • Measured Performance Primary Applications Bias conditions: Vd = 3.5 V, Vg = 0 V, Id = ~ 75 mA Typical Pout @ 77GHz dBm 16 • • Automotive Radar E-Band Communication 14 Product Description

Contextual Info: TGA4706-FC 77 GHz Medium Power Amplifier Key Features • • • • Frequency Range: 76 - 83 GHz Psat: 14 dBm at 77 GHz Gain: 15 dB Bias: Vd = 3.5 V, Vg = +0.2 V, Idq = 125 mA Typical Technology: 0.13 um pHEMT with front-side Cu/Sn pillars Chip Dimensions: 1.86 x 1.37 x 0.38 mm

copper pillar solder

Contextual Info: TGA4705-FC 77 GHz Flip-Chip Low Noise Amplifier Key Features • • • • • • Frequency Range: 72 - 80 GHz Noise Figure: 5 dB at 77 GHz Gain: 23 dB Bias: Vd = 2.5 V, Id = 60 mA, Vg = +0.18 V Typical Technology: 0.13 um pHEMT with front-side Cu/Sn pillars

HMC-MDB277

Abstract: HMCMDB277 MIXER SCHEMATIC DIAGRAM
Contextual Info: HMC-MDB277 v00.0907 GaAs MMIC FUNDAMENTAL MIXER, 70 - 90 GHz Typical Applications Features This HMC-MDB277 is ideal for: Wide IF bandwidth: DC - 18 GHz • Short Haul / High Capacity Radios Passive Double Balanced Topology • FCC E-Band Communication Systems

77GHz Radar

Abstract: TGC4702-FC PlO11 77GH
Contextual Info: TGC4702-FC 77 GHz Down Converting IQ Mixer Key Features • • • • • • • Measured Performance RF & LO Frequency Range: 75 - 82 GHz IF Frequency Range: DC - 100 MHz Conversion Loss: 12 dB @ 77GHz RF-LO Isolation: 18 dB @ 77 GHz Bias: Vb = 1.1 V Technology: HBT with front-side Cu/Sn pillars

Contextual Info: Direct Modulation/Waveform Generating, 6.1 GHz Fractional-N Frequency Synthesizer ADF4158 Data Sheet FEATURES GENERAL DESCRIPTION Radio frequency RF bandwidth to 6.1 GHz 25-bit fixed modulus allows subhertz frequency resolution Frequency and phase modulation capability

Contextual Info: Direct Modulation/Waveform Generating, 6.1 GHz Fractional-N Frequency Synthesizer ADF4158 Data Sheet FEATURES GENERAL DESCRIPTION Radio frequency RF bandwidth to 6.1 GHz 25-bit fixed modulus allows subhertz frequency resolution Frequency and phase modulation capability

FMCW circuit

Abstract: FMCW Radar ADF4158 application notes automotive radar ghz cmos
Contextual Info: Direct Modulation/Waveform Generating, 6.1 GHz Fractional-N Frequency Synthesizer ADF4158 Data Sheet FEATURES GENERAL DESCRIPTION RF bandwidth to 6.1 GHz 25-bit fixed modulus allows subhertz frequency resolution Frequency and phase modulation capability Sawtooth and triangular waveforms in the frequency domain

Contextual Info: CLC5506 CLC5506 Gain Trim Amplifier GTA Literature Number: SNOS456C CLC5506 Gain Trim Amplifier (GTA) General Description Features The CLC5506 is a low noise amplifier with programmable gain for use in cellular base stations, WLL, radar and RF/IF subsystems where gain control is required to increase the

ADF4158W

Abstract: automotive radar ghz cmos 76.5GHz
Contextual Info: Direct Modulation/Waveform Generating, 6.1 GHz Fractional-N Frequency Synthesizer ADF4158 Data Sheet FEATURES GENERAL DESCRIPTION RF bandwidth to 6.1 GHz 25-bit fixed modulus allows subhertz frequency resolution Frequency and phase modulation capability Sawtooth and triangular waveforms in the frequency domain

Contextual Info: Direct Modulation/Waveform Generating, 6.1 GHz Fractional-N Frequency Synthesizer ADF4158 Data Sheet FEATURES GENERAL DESCRIPTION RF bandwidth to 6.1 GHz 25-bit fixed modulus allows subhertz frequency resolution Frequency and phase modulation capability Sawtooth and triangular waveforms in the frequency domain

FMCW circuit

Abstract: FMCW Radar ADF4158 application notes EVAL-ADF4158EB1Z 4093 oscillator FMCW ADF4158 Rm2 tr1 application
Contextual Info: Direct Modulation/Waveform Generating, 6.1 GHz Fractional-N Frequency Synthesizer ADF4158 Data Sheet FEATURES GENERAL DESCRIPTION RF bandwidth to 6.1 GHz 25-bit fixed modulus allows subhertz frequency resolution Frequency and phase modulation capability Sawtooth and triangular waveforms in the frequency domain