AUG11 Search Results

Contextual Info: NOTES: I MATERIALS TH 1 RD AND - PTFE COPPER 4. 5. R E V 1S I O N S ^ PLATED MI N . 00C THICK ALLOY, NICKEL A RELEASE PLATED THICK) (.000100 DIM WA S 1.65; 7 WA S DIM. A. TEMPERATURE RANGE: -40° C PACKAGING: A. Q U A N T I T Y : S I N G L E PACK B. MARKI NG:

Contextual Info: High Definition MUSA VJF1224HDM FEATURES • Enhanced performance  Standard MUSA compatibility  Choice of panel colours Our Musa connectors have been redesigned to give improved performance up to 3 Gbit/s. Return loss is better than –15dB up to 1.5Ghz and better than –10dB up to 3Ghz as required by SMPTE424M.

l1117 18

Abstract: l1117 1.2 L1117 L1117 33 l1117 g L1117-3.3 L1117-1.8 l111718 voltage regulator l1117 L1117-18
Contextual Info: NIKO-SEM 1A Fixed and Adjustable Low Dropout Linear Regulator LDO L1117 Series SOT-223, TO-252, TO-220,TO-263 GENERAL DESCRIPTION FEATURES The L1117 Series are positive and low dropout three-terminal voltage regulators with 1A output current capability. These devices

Contextual Info: 5SDD 38F2000 5SDD 38F2000 Old part no. DV 818-3800-20 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 2 000 I FAVm = 3 730 I FSM = 34 000 V TO = 0.915

ABB thyristor

Abstract: thyristor ABB pt 2399
Contextual Info: 5STR 07F2541 5STR 07F2541 Old part no. TP 918F-675-25 Reverse Conducting Thyristor Properties Integrated freewheeling diode Optimized for low dynamic losses Applications Traction Key Parameters V DRM = I TAVm = I TSM = V TO = rT = tq = 2500 760 14 000 1.391

dt 92 abb

Contextual Info: 5SDD 36K5000 5SDD 36K5000 Old part no. DV 889B-3600-50 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Explosive protection Key Parameters V RRM = 5 000 I FAVm = 3 638

Contextual Info: 5SDF 04D4504 5SDF 04D4504 Old part no. DM 827-360-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 361 I FSM = 6 000 V TO = 1.858 rT

5SDD31H6000

Contextual Info: 5SDD 31H6000 5SDD 31H6000 Old part no. DV 889-3300-60 High Voltage Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 6 000 I FAVm = 3 246 I FSM = 40 000 V TO

SI-52003-F

Abstract: 52003
Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/95/EC, ELECTRICAL CHARACTERISTICS 2 5 'C 1.0 TURNS RATIO: P1—P3 :(J1—J2)

Contextual Info: BAR89. Silicon PIN Diode • Optimized for antenna switches in hand held applications • Very low capacitance at zero volts reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 0.8Ω @ IF = 10mA) • Very low signal distortion

Contextual Info: BAR89.E6816 Hitachi Silicon PIN Diode • Optimized for antenna switches in hand held applications • Very low capacitance at zero volts reverse bias at frequencies above 1 GHz typ. 0.19 pF • Low forward resistance (typ. 0.8Ω @ IF = 10mA) • Very low signal distortion

5SDF06D2504

Abstract: abb 800
Contextual Info: 5SDF 06D2504 5SDF 06D2504 Old part no. DM 827-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196

5sdd24f2800

Contextual Info: 5SDD 24F2800 5SDD 24F2800 Old part no. DV 818-2480-28 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 2 800 I FAVm = 2 596 I FSM = 30 000 V TO = 0.906

5SDD48H3200

Contextual Info: 5SDD 48H3200 5SDD 48H3200 Old part no. DV 889-4650-32 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 3 200 I FAVm = 4 708 I FSM = 61 000 V TO = 0.992

Contextual Info: 5SDD 20F5000 5SDD 20F5000 Old part no. DV 818-2000-50 Rectifier Diode Properties Key Parameters V RRM = 5 000 I FAVm = 1 978 I FSM = 24 000 V TO = 0.940 rT = 0.284 low forward voltage drop low recovery charge high operating temperature low leakage current

Contextual Info: 5SDD 10T1800 5SDD 10T1800 Old part no. D 806C-1010-18 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 1 800 I FAVm = 1 013 I FSM = 13 500 V TO = 0.934

827C-800-50

Contextual Info: 5SDD 08T5000 5SDD 08T5000 Old part no. DV 827C-800-50 Rectifier Diode Properties Key Parameters V RRM = 5 000 I FAVm = 1 028 I FSM = 12 000 V TO = 0.894 rT = 0.487 low forward voltage drop low recovery charge high operating temperature low leakage current

5SDF12T3005

Contextual Info: 5SDF 12T3005 5SDF 12T3005 Old part no. DM 818C-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195

845i

Contextual Info: 5SDD 09D6000 5SDD 09D6000 Old part no. DV 827-850-60 High Voltage Diode Key Parameters V RRM = 6 000 I FAVm = 845 I FSM = 11 000 V TO = 0.893 rT = 0.647 Properties Low forward voltage drop Low recovery charge High operating temperature Low leakage current

Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

Contextual Info: Data sheet, Rev. 2.1, Sept. 2011 6ED003L02-F Integrated 3 Phase Gate Driver Special Power IC – Drivers N e v e r s t o p t h i n k i n g 6ED003L02-F Integrated 3 Phase Gate Driver 6ED003L02-F Revision History: Previous Version: Page 6 2011-08 Rev. 2.1 2.1

AK8125AV

Abstract: AK8125A
Contextual Info: AK8125AV Spread Spectrum Clock Generator AK8125AV Features Description Input Frequency: - Crystal: 6.1-36MHz - External: 6.1- 49.92MHz Configurable Spread Spectrum Modulation: The AK8125A is a spread spectrum clock generator designed for general purpose EMI

YC-160R

Abstract: cn1e JST B4P-VH
Contextual Info: • Medical & ITE Certifications • BF Rated • Very Low 1" profile • Industry Standard Footprint • Up to 89% Efficient • <0.3W Off-load Power Draw Key Market Segments & Applications Medical MWS65 Series Test & Measurement Point of Sale Datacom 2 x 4” 55 to 67W AC-DC Power Supplies