ATF44100 Search Results

ATF-44100

Abstract: ATF44100 AT8141 AT-8141 RF FET TRANSISTOR 3 GHZ tray 4.9 6.0
Contextual Info: HEW LETT-PACKARD/ HEW LETT mPPm PA C K A R D CUPNTS b lE D • 4 4 1 * 75 0 * 4 □ D O T R S D ATF-44100 {AT-8141 2-8 GHz Medium Power Gallium Arsenide FET Features • • • 751 Chip Outline High Output Power: 32.0 dBm typical Pi <j b at 4 GHz High Gain at 1 dB Compression:

Contextual Info: ATF-44100 AT-8141 2-8 GHz Medium Power Gallium Arsenide FET Wfijm HEWLETT mLfim PACKARD Chip Outline Features • • • High Output Power: 32.0 dBm typical Pi dBat 4 GHz High Gain at 1 dB Compression: 9.0 dB typical Gi dB at 4 GHz High Power Efficiency:

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

AVANTEK transistor

Contextual Info: A V A N T E K INC 20E D • HMlTbb ODGbSfl? S ■ ATF-44100 AT-8141 2-8 GHz Medium Power Gallium Arsenide FET T-3I-2S Avantek Chip Outline Features • • • High Output Power: 32.0 dBm typical Pi da at 4 GHz High Gain at 1 dB Compression: 9.0 dB typical Gi dB at 4 GHz

4MM75

Contextual Info: HEWLETT-PACKARD/ V Z ' I H EW LETT ifflJ P A C K A R D CMPNTS blE D • 4 4 4 7 5 Ô 4 UGOTRSO ATF-44100 AT-8141 2-8 ^Hz Medium Power Gallium Arsenide FET Features 751 Chip Outline • High Output Power: 32.0 dBm typical Pi dB at 4 GHz • High Gain at 1 dB Compression:

ATF-35176

Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Contextual Info: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5