ATC700A CAPACITOR Search Results

RPE123

Abstract: RPE132 ATC200B EIA-198 murata ma28 331J COG 100 EIA-198 method 103 RPE131 ATC100E RPE121
Contextual Info: APPLICATION SPECIFIC CAPACITORS CATALOG C-29-B Please visit our website www.murata.com CONTENTS US Manufacturing Process Guide .1 Glossary of Specialized

ATC700a

Abstract: J141 mosfet atc700a capacitor ATC100A W625 78L08 AN01001 BLF2022-90 marking L5 D marking amplifier
Contextual Info: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.

marking C8 amplifier

Abstract: ATC700A atc100a w262 atc700a capacitor 78L08 AN01001 BLF2022-90 CAPACITOR MARKING transistor 78l08
Contextual Info: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.

Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 — 16 May 2014 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 4 — 23 September 2013 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

BLF7G3135L-350P

Abstract: ATC700A
Contextual Info: BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 1 — 12 October 2012 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1.

Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 2 — 6 May 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 3 — 12 July 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

Contextual Info: CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 2 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.