ATC600F390JT250XT Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage

MD8IC970NR1

Abstract: GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage

GRM31CR61H225KA88L

Abstract: j692 AN1955 AN1977 AN1987 JESD22 MD7IC2050GNR1 MD7IC2050NBR1 MD7IC2050NR1 A114
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC2050N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on - chip matching that makes it usable from 1750 - 2050 MHz. This multi - stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from

gsc3

Abstract: GRM188R71C104K01D ATC600F4R7BT250XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 0, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage

ATC600F4R7BT250XT

Abstract: ATC600F390JT250XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage

atc 17-25

Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of

Contextual Info: Document Number: MD7IC2050N Rev. 1, 5/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on- chip matching that makes it usable from 1750- 2050 MHz. This multi- stage

C5750X7S2A106M

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 1, 11/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.

Contextual Info: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

A5M06

Abstract: Transistor Z17
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

Contextual Info: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage

ATC600F470BT250XT

Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of

AFT504

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

AFT18S230S

Abstract: MXC 037 ATC100B1R2BT AFT18S230SR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 0, 8/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.

ATC600F241JT

Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of

Contextual Info: Freescale Semiconductor Technical Data Document Number: MDE6IC9120N Rev. 0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage

A5M0

Abstract: IC 2 5/A5M06
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

SEMICONDUCTOR J601

Abstract: Soshin GSC362 J295 A114 A115 AN1977 AN1987 C101 JESD22 MDE6IC9120GNR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MDE6IC9120N Rev. 0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage

N/A9M07

Contextual Info: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from

mosfet mttf

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 2, 3/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.

GSC351-HYB1900

Abstract: J3328 GRM31CR61H225K j692 J3027 AN1955 AN1977 AN1987 Soshin MD7IC2050GNR1
Contextual Info: Document Number: MD7IC2050N Rev. 1, 5/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on- chip matching that makes it usable from 1750- 2050 MHz. This multi- stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 1, 11/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT18S230SR3 This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.

ATC600S470JT250XT

Abstract: SG73P2AT GRM31MR71H105KA88L GRM188R71C104K01D RK73H2ATTD10R0F Soshin GSC362 J506 equivalent SG73P2ATTD Rogers RO4350B R8C35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 1, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage