ATC100B3R0BT500XT Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to

c5750x7s2a106m

Abstract: AD255A mosfet mttf aft20p06
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.

amplifier MA-920

Abstract: ATC100B470JT500XT MRF8S9102NR3 MOSFET 355 J314 ATC-100B-3R0 EQUIVALENT FOR J171 ATC100B3R9BT500XT MOSFET IRL arco j314
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

2595MHz

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 2, 3/2011 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to

A114

Abstract: A115 AN1955 C101 JESD22 MRF7S27130HR3 MRF7S27130HSR3 J1567 2595MHz ATC100B3R0BT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 0, 9/2007 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to

567 tone

Abstract: A114 A115 AN1955 C101 JESD22 MRF7S27130HR3 MRF7S27130HSR3 ATC100B3R6BT500XT 2595MHz
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 1, 12/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 6.3 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.