ATC100B102JT500XT Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with

Nippon capacitors

Abstract: MRF6S19120H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S19120HR3 MRF6S19120HSR3 Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 4, 12/2010 RF Power Field Effect Transistors MRF5S21100HR3 MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

MRF5P21180HR6

Abstract: MRF5P21180 AN1955 CDR33BX104AKYS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5P21180HR6 Rev. 3, 10/2008 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF5P21180HR6 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF6VP3450H

Abstract: MRF6VP3450H 470-860 MRF6VP3450HR5 DVB-T Schematic MRF6Vp3450 MRF6VP3450HR6 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

MRF6Vp3450

Abstract: MRF6VP3450HR5 atc800b4r7j500xt ATC800B MRF6VP3450H UUD1V220MCL1GS A114 JESD22 MRF6VP3450HR6 MRF6VP3450HSR5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 3, 7/2009 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

DVB-T Schematic

Abstract: MRF6VP3450HR6 atc100B120GT500XT atc100B100GT500XT MRF6Vp3450 ATC800B class B push pull power amplifier dvb-t transmitters MRF6VP3450H UUD1V220MCL1GS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 2.1, 11/2008 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

atc100b102jt500xt

Abstract: CDR33BX104AKWY ATC100B5R1JT500XT CRCW08051000FKTA ATC100B150JT500XT MRF6S21100H GX-0300-55 A114 A115 AN1955
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110

MRF6S21100H

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 1, 2/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 0, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in

mrf5s21090

Abstract: Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21090H Rev. 3, 10/2008 RF Power Field Effect Transistors MRF5S21090HR3 MRF5S21090HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

MRF19085

Abstract: CRCW12062200FKEA AN1955 CRCW120610R0FKEA GX-0300-55-22 MRF19085LR3 7525p
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF19085LR3 LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

AN1955

Abstract: ATC100B2R0BT500XT ATC100B9R1CT500XT MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090 D2426 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21090H Rev. 3, 10/2008 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF6S19120H

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY LAST ORDER 4 APR 09 LAST SHIP 3 OCT 09 MRF6S19120HR3 MRF6S19120HSR3 Designed for N - CDMA base station applications with frequencies from 1930

MRF6VP3450H

Abstract: ATC800B DVB-T Schematic MRF6Vp3450 A114 JESD22 MRF6VP3450HR5 MRF6VP3450HR6 MRF6VP3450HSR5 MRF6VP3450HSR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 2, 9/2008 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

GX-0300-55-22

Abstract: MRF19085 CRCW12062200FKEA T491D226K035AT rf power amplifier 850 MHZ AN1955 CRCW120610R0FKEA MRF19085LSR3 7525p
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF19085LSR3 LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier