ATC100B100CT500XT Search Results

rf35

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev. 0, 6/2012 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7235NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base

NIPPON CAPACITORS

Abstract: MRF6S19200H MRF6S19200HSR3 A114 A115 AN1955 C101 JESD22 MRF6S19200HR3 ATC100B100CT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19200HR3 MRF6S19200HSR3 Designed for CDMA base station applications with frequencies from 1930 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev. 0, 6/2012 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7235NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base

0119A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19200HR3 MRF6S19200HSR3 Designed for CDMA base station applications with frequencies from 1930 to