ATC CAPACITOR 100B Search Results

capacitor 30 pf

Abstract: capacitor variable capacitor zener 1206 5.1 v capacitor 180 nF capacitor variable GRM42-6C0G102J50 resistor 1k 142-0701-801 variable capacitors
Contextual Info: DB-54003L-880 BOM Component ID Description Value Case size Manufacturer C1, C9 Capacitor 30 pF 100B ATC Part Code 3R0 C2, C8 Variable Capacitor 0.8 -:- 8 pF Johnson 27293 4R3 C3 Capacitor 4.3 pF 100B ATC C4, C5 Capacitor 18 pF 100B ATC 180 C6 Capacitor 9.1 pF

Contextual Info: >LL'&''# &&#;A EVALUATION KIT )&&
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'&)&#'&/&C>p RF Power Transistor Part Number: HVV1011-300 Evaluation Kit Part Number: HVV1011-300-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com

SC15010

Abstract: SC-15010 10pf Capacitor dimension 20NE50 atc100b6r2 20 NE 50 200 pF air variable capacitor sc15000 10pf ceramic CAPACITOR variable resistor surface mount
Contextual Info: SD57030-01 RF POWER TRANSISTORS The Ldm oS T FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION • P o u t = 30 W with 13 dB gain @ 945 MHz . BeO FREE PACKAGE DESCRIPTION The SD57030-01 is a common source N-Channel

MULTILAYER Capacitors 104

Abstract: 100C capacitors 104
Contextual Info: AMERICAN TECHNICAL CERAMICS P O W E R C A PA C I T O R ASSEMBLIES ISO 9001 REGISTERED COMPANY A T C P O W E R C A P A C I T O R A S S E M B L I E S Overview About ATC Power Assemblies ATC standard & custom Power Assemblies are fabricated from PARALLEL and

Contextual Info: SD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2900 is a gold metallized N-Channel MOS

GRM42-6X7R103

Abstract: ATC 17 25 ATC 220 capacitor 100b c14 c13 tyco RESISTOR POTENTIOMETER ATC 100A 100JW capacitor 10 pf zener 100B zener 1206 5.1 v
Contextual Info: DB-55008L-450 Component ID B1 B2 C1 C2,C3 C4 C6, C7 C8 C9 C11,C12 C13 C14 C15 C16 C17 L1,L2 L3,L4 L5 R1 R2 R3 R4 D1 TL1 TL2 TL3 TL4 TL5 TL6 PD55008L Board Description Ferrite Bead Ferrite Bead Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor

Contextual Info: EVALUATION KIT >LL' '*#'*&#;A RF Power Transistor Part Number: HVV1214-140 Evaluation Kit Part Number: HVV1214-140-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com Contents: - PCB Component Placement Diagram

Contextual Info: AMERICAN TECHNICAL CERAMICS QUICK REFERENCE PRODUCT SELECTION GUIDE ISO 9001 REGISTERED COMPANY W W W . A TCER A M ICS . CO M Corporate Profile ATC designs, develops, manufactures and markets Multilayer Capacitors, Single Layer Capacitors, Resistive Products, Inductors and Custom Thin Film Products

static induction transistor SIT

Abstract: "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor 0405SC-1000M "Static Induction Transistor" x2404 1000UF 20V CAPACITOR
Contextual Info: 0405SC-1000M Rev C 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON

TB185

Contextual Info: February 1, 2012 TB185 Frequency=290-320MHz Pout=200W Gain=16dB Vds=28Vdc Idq=1.2A LR301 PH : 805 484-4210 FAX :( 805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 TB185 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=1.2A, Pout=250W

CAP 0805 ATC 600F

Abstract: SPLITTER-COMBINER Ferrite Circulators at 15 ghz CT11020T0050J 13.56 MHz spiral antenna ATC 600F atc 100e hybrid - tesla CT13737T0050J02 CT12010T0050J
Contextual Info: AMERICAN TECHNICAL CERAMICS QUICK REFERENCE PRODUCT SELECTION GUIDE ISO 9001 REGISTERED COMPANY QUICK REFERENCE PRODUCT SELECTION GUIDE Corporate Profile American Technical Ceramics Corp. ATC provides component and custom integrated packaging solutions for the RF, microwave and telecommunications

capacitor 10uF/63V

Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
Contextual Info: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

capacitor 10uF/63V

Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
Contextual Info: The innovative Semiconductor Company! HVV0912-150 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V

116TGA101K100TT

Abstract: 116RL101M100TT DK0084T TS0005T CAP 0805 ATC 600F DK0009T TS0004T 116RF100M100TT ts0003 DK0008T
Contextual Info: AMERICAN TECHNICAL CERAMICS DESIGN KITS C A PA C I T O R S • R E S I S T O R S • I N D U C T O R S W W W. AT C E R A M I C S . C O M A M E R I C A N T E C H N I C A L ATC North America 631-622-4700 • sales@atceramics.com w w C E R A M I C S ATC Europe

Contextual Info: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55TW-FET Common Gate GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

ATC 4r7 capacitor 100b

Abstract: EXCELDRC35C DATA SHEET TRANSMISSION LINE transmission line capacitor 10 pf 4R7 inductor ATC capacitor 100b capacitor 22 pf BZX284C5V1 DB-54008L-406
Contextual Info: DB-54008L-406 BOM Component ID Description Manufacturer Part Code B1 Ferrite Bead Value Case size PANASONIC EXCELDRC35C B2 Ferrite Bead PANASONIC EXCELDRC35C C1, C2 Capacitor 120 pF 1206 MURATA GRM42-6C0G121 C3 Capacitor 1 nF 1206 MURATA GRM42-6C0G102 C4 Capacitor

COG 100

Abstract: 104k x7r 50 capacitor 104k x7r 50 39 capacitor GRM42-6 COG 104K capacitor 104k 104k x7r 100 47 uf capacitor GRM42-6
Contextual Info: DB-54003L-235 BOM Component ID Description Manufacturer Part Code B1 B2 C1, C2 C3 C4 C5 C6, C12 C7 C8 C9, C10 C11 D1 L1 L2 L3 R1 R2 R3 R4 TL1 TL2 TL3 TL4 TL5 TL6 TL7 PD54003L Board Ferrite Bead Value Case size PANASONIC EXCELDRC35C Ferrite Bead PANASONIC EXCELDRC35C

5W 6.8 ohm k ceramic resistor

Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor FAIR-RITE 2743021447 UT141-25 GRM43-4X7R-104K500 diode L2.70 C22-C23 GRM43-4X7r
Contextual Info: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is

MRF5S4140H

Contextual Info: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these

C8450

Abstract: MRF5S4140H
Contextual Info: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these

j152

Abstract: RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz HVV1214-100 5919CC-TB-7
Contextual Info: The innovative Semiconductor Company! HVV1214-100 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty Cycle For Ground Based Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V

GRM42-6X7R104K50

Abstract: EXCELDRC35C ferrite L8 GRM42-6C0G102J50 capacitor GRM426X7R104K50 GRM42-6C0G151J50 potentiometer resistor 5R6 b2 philips zener diode c12
Contextual Info: STEVAL-TDR023V1 Component ID Description B1 B2 Value Case size Manufacturer Part Code Ferrite Bead PANASONIC EXCELDRC35C Ferrite Bead PANASONIC EXCELDRC35C C1, C2 Capacitor 150 pF 1206 MURATA GRM42-6C0G151J50 C3 Capacitor 1 nF 1206 MURATA GRM42-6C0G102J50

EXCELDRC35C

Abstract: GRM42-6X7R104K50 EEVHB1V100P Philips BZX284C5V1 GRM42-6C0G102J50 GRM42-6C0G121J50 capacitor 10 nf capacitor grm426x7r104k50 philips zener diode
Contextual Info: STEVAL-TDR014V1 Component ID Description Value Case size Manufacturer Part Code B1 Ferrite Bead PANASONIC EXCELDRC35C B2 Ferrite Bead PANASONIC EXCELDRC35C C1, C2 Capacitor 120 pF 1206 MURATA GRM42-6C0G121J50 C3 Capacitor 1 nF 1206 MURATA GRM42-6C0G102J50

capacitor

Abstract: RESISTOR POTENTIOMETER GRM188R71H102K philips zener diode c12 GRM188R71H104KA potentiometer resistor capacitor 60 pF STEVAL-TDR016V1 PD55015-E RUBYCON CAPACITOR
Contextual Info: STEVAL-TDR016V1 Component ID Description B1, B2 D1 L1 L2 L3 L4 R1 R2 R3 R4 C1, C2 C3 C4 C5 C6, C12 C7 C8 C9 C10 C11 C13 TL1 TL2 TL3 RF in, RF out PD55015-E Board Ferrite Bead Zener Diode Inductor Inductor Inductor Inductor Resistor Potentiometer Resistor Resistor